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  • 1
    Electronic Resource
    Electronic Resource
    Sulfur-selective chemiluminescence detection after packed-capillary-column high-performance liquid chromatography (1991)
    s.l. : American Chemical Society
    Analytical chemistry 63 (1991), S. 486-490 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00005a020
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  • 2
    Electronic Resource
    Electronic Resource
    Optical and structural studies of the effect of spacers in modulation-doped ZnSe/Zn1−xCdxSe quantum wells (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 891-895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of spacers in modulation-doped Zn1−xCdxSe/ZnSe:Cl multiple quantum wells (MD-MQWs) was investigated by photoluminescence (PL) and time-of-flight secondary-ion-mass spectrometry (TOF-SIMS). A comparison was made between structures with and without spacers as a function of annealing temperature. The diffusion of Cl and Cd was monitored by TOF-SIMS depth profiling and photoluminescence. Although TOF-SIMS does not show any significant diffusion of Cl and Cd in both structures at temperatures up to 385 °C, the PL results indicate the modification of optical properties in the Zn1−xCdxSe/ZnSe:Cl MD-MQWs due to annealing. Up to an annealing temperature of 385 °C, the MD-MQWs with spacers show superior optical quality in the quantum well regions, while quenching of the quantum well band-edge PL and strong enhancement of deep-level emission were observed from the MD-MQWs without spacers. This phenomenon suggests that the radiative deep-level emission may provide more efficient channel for electron–hole recombination with increasing annealing temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370863
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  • 3
    Electronic Resource
    Electronic Resource
    The magnetoresistance and microstructure of Fe–xCr–10Co alloy thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8593-8597 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large negative magnetoresistance (MR) is observed in Fe–xCr–10Co (x=10,20,30,40,50,- 60,70, and 80 wt %) ternary heterogeneous alloy films prepared by the IBS (ion beam sputter) deposition process. All the as-deposited films consisted of the α phase alone. After aging treatment, the α phase is decomposited into two phases: the α1 (Fe–Co rich phase) and α2 (Cr rich phase). In the granular alloy, the GMR effect is obtained by virtue of the interface scattering between α1 and α2. After isothermal aging at 400 °C for 1 h, the largest MR of −27% appears around the Cr content of 60 wt % at 77 K and 14 kOe. The MR ratio of Fe–50Cr–10Co and Fe–70Cr–10Co is −12% and −20%, respectively, at the same condition. The MR ratio is also obviously effected by the Cr (or Fe) content in the alloy system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362455
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  • 4
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance and phase decomposition of Fe–XCr–Co (WFe/WCo=1) thin film granular alloys (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4523-4527 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, the giant magnetoresistance (MR) effect was observed in Fe–XCr–Co (WFe/WCo=1, X=27, 40, 50, 60, 70, and 80 wt %) ternary heterogeneous alloy films. After aging, the separated phases and lattice images of the α1 (Fe–Co rich phase) and α2 (Cr rich phase) were further determined by high resolution transmission electron microscope. Experimental results indicate that the MR variations in Fe–Cr–Co thin films alloys were associated with the heterogeneous microstructure. By isothermal aging at 550 °C for 80 min, the largest MR of −43% appears for the film with the composition of 40(Fe/Co)–60Cr at 77 K under a field of 14 kOe. At the same treatment condition, the MR ratios of 50(Fe/Co)–50Cr and 30(Fe/Co)–70Cr are −13.2% and −21.3%, respectively. Cr content, therefore, significantly affected the MR ratio. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363557
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  • 5
    Electronic Resource
    Electronic Resource
    Optical and electrical characterization of nitrogen ion implanted ZnSSe/p-GaAs (100) (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4994-4999 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen ions were implanted into ZnSxSe1−x epilayers grown on p-GaAs (100) substrates by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Dopant activation and annealing out the implant damage were achieved by a postannealing process in a N2 ambient. Schottky structures employing the implanted p-type ZnSxSe1−x were fabricated and device efficacy was examined by photoluminescence (PL) spectroscopy, current–voltage (I–V), current–voltage temperature (I–V–T), and high frequency capacitance–voltage (C–V) measurements. PL spectra showed a clear donor–acceptor pair (DAP) recombination at an energy of 2.735 and 2.72 eV, in both MBE and MOCVD ZnSSe epilayers, respectively, regardless of the postannealing temperatures. The diode conduction in forward bias proceeds by the combination of thermionic and tunneling emission. C–V measurement proved the maximum doping concentration to be around 1017 cm−3 after ion implantation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366368
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  • 6
    Electronic Resource
    Electronic Resource
    Nitrogen ion implanted ZnSe/GaAs p-i-n photodetectors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2328-2333 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-i-n photodiodes were fabricated on nitrogen ion implanted undoped ZnSe/n-type ZnSe epilayers grown on n+GaAs (100) substrates by molecular beam epitaxy. To obtain a quasi-uniform p layer doping profile, nitrogen ions at multiple energies and ion doses were implanted at room temperature. The activation of implanted species was carried out by an optimized post-annealing in a nitrogen ambient. Optical studies were performed on the implanted/annealed devices by photoluminescence spectroscopy at 10 K, which indicated donor–acceptor pairs at an energy of 2.7 eV and its phonon replicas with 30 meV intervals. The circular p-i-n diodes with a 1 mm diam contact area showed a device breakdown voltage to be linearly dependent on the thickness of the undoped ZnSe epilayer. For p-i-n diodes fabricated on an initial 0.5 μm thick undoped ZnSe layer, an ideality factor of 1.19 and a reverse bias breakdown voltage of 12 V was observed. A large photocurrent, good linearity with light intensity, and low dark current were observed. A photocurrent/dark current ratio 〉105 was obtained at an illumination intensity of 100 mW/cm2. These devices exhibited a responsivity of 0.025 A/W at a wavelength of 460 nm through the top 200 Å thick metal contacts.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368300
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of temperature on the infrared and sum-frequency generation spectra of adsorbates (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 5920-5927 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The dephasing and energy relaxation contributions to the line width in infrared (IR) and sum-frequency generation (SFG) spectra of adsorbates are derived from the generalized master equation approach. Expression for the line shift is also obtained. The anharmonic interaction between the adsorbate and the substrate is expanded in a polynomial in terms of the adsorbate and phonon coordinates, and the dephasing is shown to be mainly due to two-phonon processes, while two-phonon, three-phonon or four-phonon processes can contribute to energy relaxation, depending on the relative values of the adsorbate vibrational and the phonon frequencies. The temperature-dependence data of the IR absorption for C(111):H is found to be consistent with the theory, and the large line width for C(111):D can be accounted for by the efficient two-phonon energy relaxation process which is not available for C(111):H due to the higher adsorbate vibrational frequency for C(111):H. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473257
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  • 8
    Electronic Resource
    Electronic Resource
    Infrared spectroscopy of adsorbed CO2 as a probe for the surface heterogeneity of diamond C(111)-1×1:H (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2474-2476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared polarization spectroscopy of the stretching motion of physisorbed CO2 has been used as a probe for the heterogeneity of hydrogen-terminated diamond single crystal surfaces. At the substrate temperature of 83 K, band shape, photometry, and isotherm measurements all indicate that the CO2 molecules are first adsorbed on defect sites, followed by adsorption on terraces that yields a single sharp spectral feature at 2333 cm−1 with FWHM=6 cm−1. Nearly 20% of the surface sites on the as-polished C(111)-1×1:H surfaces are defects © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114612
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  • 9
    Electronic Resource
    Electronic Resource
    Fabrication of flexible monocrystalline ZnSe-based foils and membranes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1608-1610 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful fabrication of flexible single crystal semiconductor structures. A highly selective etching solution allowed us to obtain large area foils and membranes of good structural integrity, using films of indium and silicone as flexible substrates. Photoluminescence and transmission measurements verified that the optical properties of these structures were preserved. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117046
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  • 10
    Electronic Resource
    Electronic Resource
    Infrared spectroscopy and vibrational relaxation of CHx and CDx stretches on synthetic diamond nanocrystal surfaces (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 11081-11088 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100028a007
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