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  • 1
    Electronic Resource
    Electronic Resource
    High electric-field amorphous silicon p-i-n diodes: Effect of the p-layer thickness (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7415-7422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present amorphous silicon p-i-n diodes able to sustain a reverse bias corresponding to 106 V/cm with a reasonably low leakage current. The influence of the p-layer thickness on the reverse bias current and the breakdown voltage is investigated. The high-voltage reverse current at room temperature is attributed to two different mechanisms: field enhanced thermal generation in the p-i interface region and, at the highest bias, electron injection through the p layer. Variable range hopping is also contributing to the low-temperature reverse current. Charge collection measurements after pulsed photogeneration were also performed up to the maximum voltage. No evidence for signal amplification is found, which sets a lower limit of 106 V/cm for impact ionization and avalanche phenomena. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357967
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  • 2
    Electronic Resource
    Electronic Resource
    Formation and crystallographic study of a (.sigma.-phenyl)molybdenum porphyrin complex: Mo(TPP)(.sigma.-C6H5)(Cl) (1985)
    s.l. : American Chemical Society
    Organometallics 4 (1985), S. 1090-1093 
    Details
    ISSN: 1520-6041
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/om00125a025
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  • 3
    Electronic Resource
    Electronic Resource
    Self-aligned ohmic contacts technology using Ti plasma etching for GaAs metal Schottky field-effect transistors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 210-212 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bimetal "T-gate'' structures have been obtained by selective Ti-Al plasma etching. These structures have been used as self-aligned masks for ohmic contact metallizations. Titanium Schottky diodes exhibit a barrier height of 720 mV with an ideality factor of 1.17. By using only the optical lithographic process, normally on GaAs metal Schottky field-effect transistors (MESFET) of 1.3-μm gate length have been fabricated. Transconductance up to 142 mS mm−1 and pinchoff voltage around −2 V have been measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336865
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  • 4
    Electronic Resource
    Electronic Resource
    Composition and chemical bonding of pulsed laser deposited carbon nitride thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4365-4370 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied composition, structure, and growth parameters of amorphous diamond-like carbon (DLC) and carbon nitride (CNx) films deposited by pulsed laser deposition in vacuum and in nitrogen atmosphere. The composition (0≤N/C≤0.4), the structural and the electronic properties of the deposited carbon and carbon nitride films were investigated for different laser fluences (1–12 J/cm2). Electron energy loss spectroscopy, x-ray photoelectron spectroscopy, and micro-Raman spectroscopy indicated an increase in sp3-bonded carbon sites in the DLC films and an increase in N-sp3 C bonded sites in the CNx films with increasing deposition laser fluence. Raman spectroscopy also showed the presence of a small amount of C(Triple Bond)N bonds in the CNx films. Furthermore, we observed that keeping the nitrogen pressure constant (P=100 mTorr) the increase in the deposition laser fluence is reflected by an increase in the nitrogen content in the films. All the results have been discussed in the framework of different theoretical models. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1309041
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  • 5
    Electronic Resource
    Electronic Resource
    Growth-induced optical anisotropy of epitaxial garnet films grown on (110)-oriented substrates (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1486-1489 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Garnet films of nominal composition (Y,Nd)3Ga5O12, were grown on (110) 1°-off Gd3Ga5O12 substrates for investigation of their growth-induced optical anisotropy. Optical birefringence and directions of the electric vectors of polarized rays passing through the films were measured under a polarizing microscope using a Brace–Köhler compensator. The growth-induced anisotropy of these films optically exhibited orthorhombic characteristics with the X, Y, and Z optic elasticity axes coinciding with the [001], [110], and [1¯10] directions, respectively. The crystallographic data obtained by means of single-crystal diffractometry suggested that the cubic crystal system of the garnet film was distorted, though very slightly, to an orthorhombic one with a,b, and c axes that coincided, respectively, with the [1¯10],[001], and [110] of the original cubic cell. In addition, by annealing at 1150 °C, this distortion disappeared and the crystal system reverted to cubic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337276
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  • 6
    Electronic Resource
    Electronic Resource
    Structural study of a thermally diffused Al/Ni bilayer via x-ray absorption spectroscopy and x-ray photoelectron spectroscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2718-2724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ni thin films deposited on (111) Al thick samples have been submitted to annealing treatment. The goal is to identify the phases formed in the early stage of mixing between Ni and Al. Combining complementary techniques such as x-ray absorption spectroscopy and x-ray photoelectron spectroscopy, we characterized two different systems depending on the temperature conditions. For a thermal treatment at 110 °C, a system formed of small AlNi3 clusters embedded in the Al matrix was identified. This was interpreted as due to the existence of a spontaneous Al/Ni interface mixed layer acting as a seed for the AlNi3 cluster formation. After annealing at 300 °C, the Al3Ni intermetallic compound was detected, in agreement with results in the literature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392961
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  • 7
    Electronic Resource
    Electronic Resource
    Surface electron-diffraction patterns of β-FeSi2 films epitaxially grown on silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1747-1761 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semiconducting β-FeSi2 is drawing much current research interest because of hoped-for silicon-based optoelectronics applications. The study of heteroepitaxial film growth on silicon depends heavily upon several transmission and reflection electron-diffraction techniques. Because of the complicated crystal structure of this material, the possibility of competing heteroepitaxial relationships, the propensity for formation of epitaxial variants by rotation twinning, and the uncertainty in the crystalline surface nets, the analysis of experimental diffraction patterns is complicated. A theoretical reference for a number of fundamental electron-diffraction patterns is provided and they are illustrated with a broad range of experimentally obtained patterns from the surfaces of epitaxial films. In situ transmission reflection high-energy electron diffraction (RHEED) (transmission electron diffraction with conventional RHEED instrumentation), from rough but epitaxial films, is of great utility and quite feasible with epitaxial systems such as this one, which exhibit a tendency toward islanding. The possibilities for experimentally distinguishing, with this technique, the competing epitaxial relationships on Si(111) are clarified; it is found that the β-FeSi2(110) matching face is certainly present in these samples and the (101) may be also. An experimental determination of the two-dimensional space groups of the (100), (110), and (101) faces is also presented—in the first and third cases the surface unit meshes are different from the simple projections of the bulk crystalline unit cell.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354804
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  • 8
    Electronic Resource
    Electronic Resource
    Highly distorted homoporphyrin complex. Crystal and molecular structure of the (10H-10-hydroxyl-21-ethoxycarbonyl-5,10,15,20-tetraphenyl-21-homoporphinato nickel (II) (1976)
    s.l. : American Chemical Society
    Inorganic chemistry 15 (1976), S. 770-774 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic50158a005
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  • 9
    Electronic Resource
    Electronic Resource
    Collisional quenching of CO+(A 2Π3/2, v'=1) by Ne (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 1653-1656 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Time resolved laser-induced fluorescence was used to study the quenching of CO+ (A 2Π,v'=1) by Ne. In spite of almost identical collision rates the quenching rate for Ne, kq =(4±1)×10−11 molecule−1 cm3 s−1, is much larger than for He. A tentative interpretation of the large quenching efficiency of Ne is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458099
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  • 10
    Electronic Resource
    Electronic Resource
    Broad-band structured fluorescence from NaI (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 4478-4489 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The emission spectrum of a molecular beam of NaI has been measured following excitation by the 248 nm KrF line of an excimer laser. The fluorescence structure, and the lifetime (17±2 ns), indicate the presence of a bound upper state not previously characterized. We identify this state as correlating with Na(3 2P)+I(5 2P3/2) atoms. Through numerical simulation using a Morse function representation for the upper state, we have determined approximate values for the well depth of 530±260 cm−1, well breadth of ∼1.8 A(ring)−1, and equilibrium separation of ∼3.4 A(ring) for this state. As a consequence of the breadth of this weakly bound excited state the bound→bound line spectrum spans a broad spectral range (87% of the ground state well depth) entirely comparable with spectra attributed to free→bound emission.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454787
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