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  • 1
    Electronic Resource
    Electronic Resource
    Growth-induced optical anisotropy of epitaxial garnet films grown on (110)-oriented substrates (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1486-1489 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Garnet films of nominal composition (Y,Nd)3Ga5O12, were grown on (110) 1°-off Gd3Ga5O12 substrates for investigation of their growth-induced optical anisotropy. Optical birefringence and directions of the electric vectors of polarized rays passing through the films were measured under a polarizing microscope using a Brace–Köhler compensator. The growth-induced anisotropy of these films optically exhibited orthorhombic characteristics with the X, Y, and Z optic elasticity axes coinciding with the [001], [110], and [1¯10] directions, respectively. The crystallographic data obtained by means of single-crystal diffractometry suggested that the cubic crystal system of the garnet film was distorted, though very slightly, to an orthorhombic one with a,b, and c axes that coincided, respectively, with the [1¯10],[001], and [110] of the original cubic cell. In addition, by annealing at 1150 °C, this distortion disappeared and the crystal system reverted to cubic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337276
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  • 2
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxy of silicon at very low temperatures
    Amsterdam : Elsevier
    Journal of Crystal Growth 37 (1977), S. 169-177 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(77)90079-3
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  • 3
    Electronic Resource
    Electronic Resource
    Reactivity and magnetism of Fe/InAs(100) interfaces (2002)
    Springer
    The European physical journal 28 (2002), S. 305-313 
    Details
    ISSN: 1434-6036
    Keywords: PACS. 61.10.Ht X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc. – 68.35.Fx Diffusion; interface formation – 75.70.Ak Magnetic properties of monolayers and thin films – 82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: Interface reaction and magnetism of epitaxially-grown Fe on InAs(100) are studied by core-level photoemission (As 3d and In 4d) and Fe 2p X-ray magnetic circular dichroism using synchrotron radiation. The reactivity of Fe/InAs(100) is relatively low compared to that of other interfaces involving deposition of 3d metals on III-V semiconductors. As a consequence, we observe a magnetic signal at Fe L2, 3 edges for the lowest thicknesses studied (1 ML). The atomic magnetic moment reaches a value close to that of the bulk α-Fe (2.2 μ B) for Fe coverages exceeding 5 ML. A ferromagnetic compound with approximate stoichiometry of FeAs is formed at the interface. The orbital magnetism represents between 12 and 20% of the total momentum, due to 3d density of states depletion and to crystal-field modification of the electronic levels. These properties make the Fe/InAs(100) interface very promising for spin-tunneling devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1140/epjb/e2002-00234-6
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