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  • 1
    Electronic Resource
    Electronic Resource
    Elastic recoil detection for medium-energy ion scattering (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3147-3152 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Medium-energy ion scattering (MEIS) has been successfully applied for many years as a technique for structural analysis of solids. Advantages over competing techniques include superb depth resolution (5–10 A(ring)), quantitative information (well-known cross sections), and ease of interpretation. A weakness of the technique is the lack of sensitivity to light elements. We have adapted the technique to detect light elements by elastic recoil detection analysis (ERDA). This has been used to analyze samples containing hydrogen and boron, with depth resolution of ≈10 A(ring), comparable to conventional MEIS. This is an order of magnitude improvement over conventional ERDA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144322
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  • 2
    Electronic Resource
    Electronic Resource
    Stoichiometry reversal in the growth of thin oxynitride films on Si(100) surfaces (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6761-6769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron-based O 1s and N 1s photoabsorption spectroscopy, O 1s, N 1s, Si 2p, and valence-band photoelectron spectroscopy (PES), and medium energy ion scattering (MEIS) have been used to determine the composition and thickness of oxynitride films grown in N2O on a Si(100) surface. Core-level photoabsorption spectroscopy is shown to be a very sensitive probe capable of measuring surface coverages lower than 0.1 monolayers of N (6.5×1013 N atoms/cm2). Film composition was monitored as a function of growth to demonstrate the stoichiometry reversal from primarily N-terminated surfaces in thin films to nearly pure SiO2 in films thicker than ∼20 A(ring). A sample with a 60 A(ring) oxynitride film was depth profiled by etching in HF and was shown, via N 1s absorption spectroscopy, to have N segregation within 10 A(ring) above the Si/SiO2 interface. Core-level PES and MEIS were used to study the growth mechanisms of oxynitrides on Si(100) and these data were used to create a schematic phase diagram showing three distinct regions of oxide formation. A critical N2O pressure was discovered at which oxide growth proceeds at over 1000 times its normal rate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360500
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  • 3
    Electronic Resource
    Electronic Resource
    Are bare surfaces detrimental in epitaxial growth? (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2648-2650 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For growth of epitaxial silicon-germanium structures by hydride chemical vapor deposition (CVD), the growth front is hydrogen-stabilized. Using medium energy ion scattering to examine the abruptness of an embedded Ge film in a Si(001) host, intermixing can be directly assessed. We have explored CVD films grown with varying hydrogen coverages, and find that adsorbed hydrogen serves a beneficial role in maintaining the abruptness of the interface. Embedded layers grown by molecular beam epitaxy are also more abrupt when the surface is stabilized, in this case by an adsorbed passivant such as Sb or As. Growth in the presence of a surface active agent (surfactant) results in greater control of constituents with no loss of epitaxial quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104796
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  • 4
    Electronic Resource
    Electronic Resource
    Metallization induced band bending of SrTiO3(100) and Ba0.7Sr0.3TiO3 (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3227-3229 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the interaction of Pt with single-crystal SrTiO3(001) and polycrystalline Ba0.7Sr0.3TiO3 thin films using photoemission spectroscopies. Significant band bending is caused by interface formation, determining the Schottky barrier height. We have depth profiled the band bending for Ba0.7Sr0.3TiO3 thin films, giving a direct measurement of the depletion depth and built-in potential. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119148
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  • 5
    Electronic Resource
    Electronic Resource
    Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 219-221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of growth temperature on the interfacial abruptness of strained Ge layers, a few monolayers thick, embedded in Si has been studied using Raman spectroscopy to identify the presence of GeGe and GeSi bonds and medium energy ion scattering to characterize the spatial extent of the layers. Atomically sharp interfaces are observed for growth temperatures just above the crystalline to amorphous transition range, with pseudomorphic growth found for growth temperatures 〉∼250 °C. Asymmetric mixing of Ge into the Si capping layer occurs during growth at higher temperatures. Significantly less intermixing occurs on annealing after growth, pointing to the role of dynamical processes occurring at the growth front.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101014
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  • 6
    Electronic Resource
    Electronic Resource
    Medium energy ion scattering analysis of reactive ion etched Si(001) surfaces (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2317-2319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon surfaces reactive ion etched in CF4/H2 plasmas have been examined using medium energy ion scattering and core level photoemission. Surfaces analyzed in ultrahigh vacuum have a significantly higher fluorine content than surfaces that have been exposed to air prior to analysis. In addition, an unusually large cross section exists for ion beam desorption of some, but not all, of the fluorine. Based on core level shifts, we demonstrate that fluorine desorption arises from both the fluorocarbon film and the underlying fluorosilyl layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100265
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  • 7
    Electronic Resource
    Electronic Resource
    A new two-dimensional particle detector for a toroidal electrostatic analyzer (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2679-2683 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a new two-dimensional detector for the detection of ions scattered from a solid target, analyzed in energy and scattering angle by a toroidal electrostatic analyzer. The detector resolves the scattering angle with a resolution of 0.4° over a range of 25°, and the ion energy with a resolution of 120 eV over a range of 2000 eV, at 100 keV ion energy. The energy resolution of the spectrometer was improved with a factor 4 relative to its previous performance with a one-dimensional scattering angle detector, while−at the same time−the dose efficiency (count/μC) was improved by a factor 5–10.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142199
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  • 8
    Electronic Resource
    Electronic Resource
    Surfactant coverage and epitaxy of Ge on Ga-terminated Si(111) (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2962-2964 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the role of surfactant coverage and bonding for growth of Ge on Si(111). At 470 °C Ge grows on Si(111)-(7×7) in a Stranski–Krastanov fashion. Preadsorption of 1-ML Ga at 500 °C forms a Ga:Si(111)-(6.3×6.3) structure and alters the Ge growth mode from three-dimensional (3D) islanding to continuous film formation. However, the epitaxial layer contains defects, caused by the presence of domain boundaries of both A- and B-type material. Growth properties depend strongly on the initial Ga coverage: if a ((square root of)3×(square root of)3) surface with 1/3-mL Ga is used, a modified Stranski–Krastanov growth mode is observed, with 3D islands of a uniform predominant thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109157
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial Si films on Ge(100) grown via H/Cl exchange (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 510-512 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures of Si2H6 and Si2Cl6, maintaining chlorine and hydrogen surface termination. At 465 °C, film growth rate is roughly 2 monolayer per cycle (one cycle equals 1 Si2H6 and 1 Si2Cl6 exposure). At 475 °C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108895
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  • 10
    Electronic Resource
    Electronic Resource
    Surfactants in Si(111) homoepitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 487-489 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si epitaxy is strongly affected by the presence of an adsorbate (surfactant). We have examined both film quality and dopant incorporation in homoepitaxy for Sb, As, and Ga terminated Si(111). The efficency of site exchange between Si and adsorbate depends sensitively on binding energy and binding geometry of the adsorbate. For a weakly bound adsorbate (Ga or Sb), there is no inhibition of epitaxy, but a strongly bound adsorbate (As) kinetically inhibits growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114065
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