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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1676-1680 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic and structural properties of pulsed laser deposited MnZn–ferrite films have been examined. The results show that the uniaxial anisotropy, ferromagnetic resonance linewidth and coercive force are strongly influenced by the microstructure of the films, and the saturation magnetization and first-order magnetocrystalline anisotropy constant depend on intrinsic properties such as composition and cation site occupation. A comparison of bulk and film magnetic properties shows that the magnetic properties of the films are comparable to the bulk, which makes pulsed laser deposition ferrite films a prime candidate for thin film high-frequency microwave device applications.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of a polycrystalline La–Sr–Co–O/Pb–Nb–Zr–Ti–O/La–Sr–Co–O ferroelectric capacitor heterostructure is demonstrated on platinized conducting barrier layers of TiN/poly-Si/Si substrate for integration into high density nonvolatile memory (HDNVM). The concept of conducting bottom layers allows the realization of three-dimensional stacked capacitor-transistor geometry with a direct contact to the memory capacitor, occupying significantly less area on the chip required for HDNVM application. The growth of the ferroelectric heterostructure is achieved at a low temperature of 500–550 °C, compatible with existing Si based technology, without losing the structural and phase integrity of the ferroelectric stack and conducting bottom layers. The fatigue-free characteristics up to 1011 cycles at room temperature and 100 °C, imprint test and good retaining capability evaluated on these capacitors prove their suitability for HDNVM devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1573-4889
    Keywords: oxidation mechanisms, Cr2O3 ; 18O/SIMS ; grain-boundary segregation ; yttrium implantation ; reactive-element effect
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation behavior of pure Cr and Cr implanted with Y was studied as a function of temperature (900 and 1025°C) and ion-implantation dose (1×1015 and 2×1016 Y ions/cm2). The microstructures of the Cr2O3 scales were affected by both of the variables studied. Yttrium ions segregated at the grain boundaries in the Cr2O3 scales formed on the implanted alloys and the concentration of Y at the grain boundaries decreased with a decrease in the dose of implanted Y. The mechanism of growth of the Cr2O3 scales was altered by the presence of the Y ions at the Cr2O3 grain boundaries only when a critical concentration of Y at the grain boundaries was exceeded.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1573-4889
    Keywords: oxidation mechanisms ; grain-boundary segregation ; Cr2O3 ; 18O/SIMS ; yttrium implantation ; reactive-element effect
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation behavior at 900°C of pure Cr and Cr implanted with 2×1016 Y ions/cm2 was studied. The kinetics of oxidation were measured thermogravimetrically and manometrically. The mechanisms of oxide growth were studied using18O-tracer oxidation experiments, and the composition and microstructure of the oxide scales were characterized by TEM and STEM. Segregation of Y cations at Cr2O3 grain boundaries was found to be the critical factor governing changes in the oxidation behavior of Cr upon the addition of Y. In the absence of Y, pure Cr oxidized by the outward diffusion of cations via grain boundaries in the Cr2O3 scale. When Y was present at high concentration in the scale, as when Cr implanted with 2×1010 Y ions/cm2 was oxidized, anion diffusion predominated. It is concluded that strain-induced segregation of Y at grain boundaries in the oxide reduced the cation flux along the grain boundaries. The rate of oxidation was reduced because the grain-boundary diffusivity of cations became lower than the grain-boundary diffusivity of the anions, which then controlled the rate of oxidation. Changes in the relative rates of Cr3+ and O2− transport, as well as a solute-drag effect exerted by Y on the oxide grain boundaries, resulted in changes in the microstructure of the oxide.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1572-9605
    Keywords: YBa2Cu3O7−δ ; pulsed laser deposition ; LaAlO3 ; microwave surface resistance ; thin film microstructure ; TEM
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Oriented YBa2Cu3O7−δ/LaAlO3/YBa2Cu3O7−δ trilayers were deposited by pulsed laser deposition (PLD) onto 〈100〉 MgO and LaAlO3. Film thicknesses varied from 2000–5000 Å/ layer. A comparision of structure and transport data for the bottom and top superconducting layers indicated a slight decrease in film quality for the top superconducting layer. The critical temperature was lower for the top superconducting layer (90.5 vs. ∼90 K) and the microwave surface resistance was higher (increasing from ∼2 to 18 mω at 36 GHz, 20 K). The resistivity of the dielectric was estimated to be 106 ω cm, and the loss tangent of the dielectric film at microwave frequencies had an upper limit of 0.01. Cross-sectional TEM analysis of the trilayer structure showed a high density of threading dislocations in the dielectric layer that appeared to nucleate at steps in the underlying superconducting layer. The threading dislocations may serve as conduction paths in the LaAlO3 layer.
    Type of Medium: Electronic Resource
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