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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Since modern high frequency device technology is shifting towards planar miniaturization, ferrite films will play an important role in facilitating the design and fabrication nonreciprocal monolithic integrated devices such as isolators and circulators. The authors have examined magnetic and structural properties for a series of pulsed laser deposited (PDL) single crystal MnZn-ferrite films. The films were epitaxially grown on (001) MgO at substrate temperatures of 300 °C, 400 °C, 600 °C, and 800 °C in an oxygen partial pressure of 30 mTorr. The film microstructure, crystal structure, and composition were characterized by SEM, x-ray diffraction and atomic absorption spectroscopy, respectively. The magnetocrystalline anisotropy constant K1, uniaxial anisotropy constant Ku, saturation magnetization Ms, and coercive force Hc were examined by torque and vibrating sample magnetometry. Ferrimagnetic resonance measurements were made on the films to obtain the linewidth ΔH. A comparison of the magnetic, structural, and chemical properties shows that K1 and Ms scale with the Fe2+ ion concentration and that Ku, Ms, and ΔH are very sensitive to the microstructure. The values of K1, Ms, and ΔH obtained for films deposited at 800 °C were compared with those of bulk MnZn-ferrite and found to exceed the bulk values (Table I), thus making PLD ferrite films very attractive for nonreciprocal device applications.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1676-1680 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic and structural properties of pulsed laser deposited MnZn–ferrite films have been examined. The results show that the uniaxial anisotropy, ferromagnetic resonance linewidth and coercive force are strongly influenced by the microstructure of the films, and the saturation magnetization and first-order magnetocrystalline anisotropy constant depend on intrinsic properties such as composition and cation site occupation. A comparison of bulk and film magnetic properties shows that the magnetic properties of the films are comparable to the bulk, which makes pulsed laser deposition ferrite films a prime candidate for thin film high-frequency microwave device applications.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6884-6891 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thick films (10–12 μm) of NiZn–ferrite (Ni0.6Zn0.4Fe2O4) were grown on single-crystal (100) magnesium oxide substrates using pulsed laser deposition (PLD). The morphology, phase, orientation, strain, and magnetic properties of the as-deposited films were investigated as a function of substrate temperature (400–700 °C) and O2 background pressure (50–200 mTorr). Compositional analysis shows that the PLD NiZn–ferrite films are about 45% Zn deficient when grown using a standard polycrystalline single phase Ni0.4Zn0.6Fe2O4 target regardless of substrate temperature or O2 pressure. However, Zn-rich targets were successfully used to compensate for the Zn deficiency in the NiZn–ferrite films. PLD NiZn–ferrite films grown at 700 °C exhibit the highest degree of crystalline quality and nearly bulk saturation magnetization values (i.e., 5000 G). At low O2 pressures (〈75 mTorr) the films, which were grown at 700 °C, are under a significant compressive stress. The stress decreases when the PLD NiZn–ferrite films are grown in higher O2 pressures but the crystalline quality and surface morphology deteriorate. The compressive stress produces a planar anisotropy field of about 1000–3500 Oe depending on the O2 pressure, which is consistent with the stress results from x-ray diffraction measurements on the NiZn–ferrite films. It is hypothesized that the film stress is largely the result of oxygen loss from the films during deposition. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1045-1047 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the electron-charge-carrying high-temperature superconductor, Nd1.85Ce0.15CuO4−y have been deposited by pulsed laser deposition on to 〈100〉 MgO and SrTiO3 substrates. Film composition, structure, and transport properties were measured as a function of deposition conditions (substrate temperature, oxygen deposition pressure, and postdeposition annealing conditions). C-axis oriented, single-phase films were formed at high substrate temperatures (900 °C) in high background pressures of oxygen (200 mTorr), but were semiconducting when quenched to room temperature in either oxygen or nitrogen. A reduced oxygen background pressure during deposition at 900 °C resulted in films that were transparent and insulating due to the loss of copper. Films which were deposited at 900 °C (Poxygen≥200 mTorr) and then slowly cooled in a vacuum were superconducting with a maximum Tc (onset) of 15 K and Tc(R = 0) of 11 K.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that the suppression of parasitic Fabry–Perot-like lasing modes substantially enhances the beam quality and brightness of wide-stripe angled-grating distributed feedback lasers emitting in the midwave infrared. The direct facet-to-facet gain path is blocked by loss regions that are created by ion bombardment with 900 keV silicon ions. Both virtual mesa structures, in which loss regions bound both sides of the 300-μm-wide angled gain path, and spoiler structures, in which loss is induced only near the facets, decrease the etendue of the output by nearly an order of magnitude, and increase the brightness by up to a factor of 3. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1173-1175 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films (1.7 μm thick) with the composition PbFe12.9O22.9 and hexagonal lattice parameters a=5.12 Å and c=23.67 Å have been pulsed laser deposited at 600 °C in 50 mTorr of O2 onto single-crystal (0001) sapphire substrates. Epitaxy was determined using standard powder x-ray diffraction (XRD) and grazing incidence XRD. The films were deposited using a single-phase polycrystalline PbFe12O19 target. The composition of the films is PbFe12.9O22.9, which was measured using Rutherford backscattering spectrometry. Static magnetic measurements were performed using a vibrating sample magnetometer and SQUID magnetometer in order to measure magnetic anisotropy, magnetic remanence (Mr), coercive field (Hc), and saturation magnetization (4πMs) of the films. The PbFe12.9O22.9 films exhibit magnetically isotropic behavior in the film plane with remanence ratio (Mr/Ms) and Hc values of 88±2.9% and 2500±97 Oe, respectively. However, the films are anisotropic with respect to the film normal such that the c axis is a magnetically hard direction and all directions normal to the c axis are magnetically easy (i.e., a planar anisotropy field, HA, with an estimated magnitude of 77.5 kOe). The 4πMs value for the films is 630 Gauss at room temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1605-1607 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of Sr0.5Ba0.5TiO3 have been grown on MgO (100), SrTiO3 (100), and LaAlO3 (012) substrates using pulsed laser deposition. These films were characterized by a variety of x-ray diffraction techniques. Deposited films exhibited true single crystal morphology. X-ray rocking curves for the (002) reflection as measured by double and triple crystal spectrometers showed unusually narrow full width at half-maximum (FWHM) values of 72 arcsec for films grown on LaAlO3, and 140 arcsec for films deposited onto SrTiO3. The FWHM for films deposited on MgO were significantly broader (∼2500 arcsec). While the quality of the epitaxial films is related to the lattice mismatch between the film and the substrate, extremely well aligned films can be grown on substrates with a relatively large lattice mismatch.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization and resistivity measurements are reported for a series of radiation damaged La0.7Ca0.3MnO3 pulsed laser deposited thin films. When plotted as a function of activation energy, trends in the electrical transport properties are similar to those exhibited in the magnetic properties. A sharp drop in both Tc and Tp in samples with activation energies greater than ∼110 meV suggests a "decoupling" of the magnetic and transport properties. The results suggest the magnetic order is no longer sufficient to delocalize the system of the extra disorder induced by the radiation damage.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1845-1847 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurement of the relative dielectric constant of a Sr0.5Ba0.5TiO3 (SBT) thin film is presented as a function of electric field strength and temperature over a broad frequency range using a microstrip transmission line. The transmission line was fabricated from a trilayer structure where the SBT film, grown by pulsed laser deposition, was bounded by silver and platinum metallization layers. Such structures involving ferroelectric films could be useful for microwave applications because of the substantially smaller bias voltages (≈1–10 V) compared to those required for bulk material. The SBT film was found to exhibit a dielectric constant of ≈120–250 and a large electric field modulation of ≈50% at 200 kV/cm. These properties of the material as well as the Curie temperature are compared to those of bulk SBT.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1565-1567 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of PbZrxTi(1−x)O3 (PZT) with 0≤x≤0.6 have been deposited in situ by pulsed laser deposition from stoichiometric targets onto 〈100〉 oriented single crystals of MgO and SrTiO3. Film composition was extremely sensitive to the substrate temperature and the oxygen deposition pressure. In a high (200–300 mTorr) oxygen ambient, phase-pure 〈100〉 oriented PZT films (x=0.54) were formed at a substrate temperature of 550 °C on SrTiO3. On MgO, competition between formation of the ferroelectric phase and a nonferroelectric (pyrochlore) phase was observed for compositions near the morphotropic phase boundary (x∼0.54). Polycrystalline PZT films which were 70%–90% PZT were also deposited on Pt coated Si and GaAs under similar conditions.
    Type of Medium: Electronic Resource
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