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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1961-1963 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High current YBa2Cu3O7−δ (YBCO) thick films on flexible nickel substrates with textured buffer layers were fabricated. Highly textured yttria-stabilized-zirconia buffer layers were deposited by using ion beam assisted deposition (IBAD). Pulsed laser deposited YBCO films were not only c-axis oriented with respect to the film surface but also strongly in-plane textured. The in-plane mosaic spread of YBCO films was ∼10°. A critical current density of 8×105 A/cm2 was obtained at 75 K and zero field for thin YBCO films. It was also demonstrated that thick YBCO films with a high critical current and excellent magnetic field dependence at liquid nitrogen temperature can be obtained on flexible nickel substrates by using the textured buffer layers. The result indicates that thick film technology in combination with IBAD buffer layers could be a viable method for fabricating YBCO tapes in long lengths. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2434-2436 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SrRuO3 thin films were deposited on (100) LaAlO3 using pulsed laser deposition. The films were (001) oriented normal to the substrate surface with a high degree of in-plane orientation with respect to the substrate's major axes. An ion beam minimum yield of 2.5% was obtained for the films, indicating high crystallinity. The films exhibited metallic behavior with a room temperature resistivity of ∼200 mW cm. A kink in the resistivity, corresponding to a ferromagnetic phase transition, was observed at ∼160 K. It was found that SrRuO3 is structurally and chemically compatible with the YaB2Cu3O7−d (YBCO) superconductors. High quality YBCO films were obtained on SrRuO3 LaAlO3. Multilayers of YBCO/SrRuO3 were successfully fabricated.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2043-2045 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown a-axis oriented YBa2Cu3O7−x (YBCO) thin films on Si(100) substrates with (110) oriented insulating buffer layers of cerium dioxide (CeO2) using the pulsed laser deposition technique. The films are highly oriented and textured as determined by θ–2θ x-ray diffraction, x-ray pole-figure scan, scanning electron microscopy, Rutherford backscattering spectroscopy, and ion channeling. No diffusion at the interface has been found at growth temperatures up to 760 °C, indicating the CeO2 is a chemically stable and structurally compatible intermediate material for the growth of YBCO on Si. A zero resistance superconducting transition temperature of 87 K and a critical-current density (Jc) of 1.5×105 A/cm2 at 75 K have been measured; Jc obtained represents the highest value for the a-axis oriented YBCO films.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Crystal Growth 139 (1994), S. 302-308 
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Bulk YBa2Cu3O6+x superconductor was synthesized using the hot-pressing technique combined with various oxygen-annealing cycles. Pressed samples, with theirab-planes perpendicular to the pressing axis, annealed in oxygen at the partial melting point of approximately 1000°C and slowly cooled at different rates in the temperature ranges 975–935 and 935–450°C showed enhanced magnetization hysteresis loops with a weak field dependence. Due to oxygen-deficient regions in these materials, anomalous magnetization hysteresis loops with a “butterfly” contour were observed at temperatures above 50 K. This indicates that these regions act as effective flux-pinning centres at high temperatures. The critical magnetization current density (J c) calculated using the Bean model and the average grain dimension was of the order of 104 A cm−2 at 75 K up to 1 T. Because of a shorter period of oxygenation and a weak field dependence ofJ c s, the synthesis process reported here is very promising and further optimization of the period in various annealing temperature ranges to limit the weak links caused by excessive grain growth becomes necessary. The observations are also correlated with the morphology and the crystal orientation studied by scanning electron microscopy and X-ray diffractometry, respectively.
    Type of Medium: Electronic Resource
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