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  • 1
    Electronic Resource
    Electronic Resource
    Ion-beam direct-write mechanisms in palladium acetate films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1403-1410 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pd features have been fabricated by high-energy ion irradiation (2-MeV He+, 2-MeV Ne+, and 20-keV Ga+ ions) of thin palladium acetate films. 2-MeV He+ irradiation produces smooth metallic-looking features that contain up to 30% of the original carbon and 5% of the original oxygen content of the film. Films irradiated with 2-MeV Ne+ ions contain slightly lower amounts of carbon and oxygen residues, but the films' appearance varied with thickness. Exposures made with a 20-keV Ga+ ion beam, focused to a 0.2-μm spot, produce features with carbon and oxygen contents higher than those found with He+ and Ne+ exposures. Heating the ion-beam-defined palladium features in a hydrogen ambient reduces the carbon and oxygen contents and improves the electrical conductivity. Decomposition mechanisms and comparisons with laser direct writing are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344444
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  • 2
    Electronic Resource
    Electronic Resource
    A Monte Carlo simulation of damage to the gate oxide of metal-oxide-silicon field-effect transistors from electron beam lithography (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2024-2030 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work uses a single-scattering Monte Carlo simulation of electron-solid interactions to predict the effects of electron beam lithography on the gate oxide of metal-oxide-silicon field-effect transistors (MOSFET). Both 20 and 50 keV electron energies are examined. Electron radiation can cause significant disorder in the gate oxide and this paper discusses possible solutions to minimize the electron damage. One solution examined in detail is the effect of a high-density material incorporated in the MOSFET. The paper also explores the generation of x rays by the electron lithography. X-ray damage to the gate oxide is calculated to be small.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342896
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Ion beam damage-induced masking for photoelectrochemical etching of III-V semiconductors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4012-4014 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation damage has been used as a mask for patterning III-V semiconductors by photoelectrochemical etching. The damage inhibits etching and the optical absorption of the semiconductor prevents light from penetrating through the damaged layer. Patterns of ion implantation damage have been produced on the surface of InP, InGaAs, and InGaAsP by implantation of 50 and 150-keV Be+ ions through a photoresist mask and with a focused beam of 20-keV Ga+ ions. Subsequent photoelectrochemical etching produces surface relief features corresponding to the damage pattern. The effect of the electrolyte and the spectral composition of the light on the resolution are described. Micron size features have been delineated and the technique may be preferable to alternate masking methods (metallization or projection) in certain applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337525
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of GaAs and Si by a microwave photoconductance technique (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1676-1680 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nondestructive microwave photoconductance technique has been employed to investigate the uniformity of electrical transport properties in semi-insulating, doped, or implanted GaAs. Although the measurement time is increased, the technique is also applicable to Si. A review of the advantages and limitations is discussed and some example applications to a variety of GaAs and Si structures are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337257
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  • 5
    Electronic Resource
    Electronic Resource
    Hydrogenation of shallow-donor levels in GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2821-2827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow-donor levels due to Si, Ge, Sn, S, Se, and Te in GaAs are neutralized by association with atomic hydrogen; Si and Te donors in AlGaAs have also been shown to be neutralized. In contrast, the shallow acceptors Be, Mg, Zn, and Cd in GaAs are relatively unaffected by hydrogenation. The activation energy for recovery of the donor electrical activity is around 2.1 eV for each of the species, but varies as the strength of an isolated hydrogen-donor species bond. The neutralization depth of the donors is proportional to the inverse square root of donor concentration, and this depth is given as a function of plasma exposure temperature (100–350 °C) and bonding site density (8×1013–1.5×1018 cm−3).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336964
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical activation of implanted Be, Mg, Zn, and Cd in GaAs by rapid thermal annealing (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3252-3254 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of p channel (p∼3×1017 cm−3) and p+ regions (p〉5×1018 cm−3) in GaAs by rapid annealing of Be, Mg, Zn, or Cd implants at 900–950 °C is reported. The electrical characteristics of each species were investigated by capacitance-voltage profiling, Hall-effect and microwave photoconductance measurements, and particular emphasis was placed on determining the uniformity of activation over 2-in.-diam wafers. The results demonstrate that rapid thermal annealing is well suited to GaAs integrated circuit applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335782
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  • 7
    Electronic Resource
    Electronic Resource
    Rapid annealing of GaAs: Uniformity and temperature dependence of activation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 163-168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning microwave photoconductance, capacitance-voltage profiling, and Hall effect measurements were used to investigate the uniformity of activation of Si-, Be-, and Mg-implanted 2- and 3-in.-diam, semi-insulating GaAs substrates after rapid thermal annealing in a commerical furnace. The results indicate that carrier lifetimes and mobilities for low-dose (3–4×1012 cm−2) implants and carrier densities for high-dose (1×1015 cm−2) implants are comparable or superior in rapidly annealed substrates to those obtained in thermally annealed implanted layers. The uniformity of these parameters is not significantly different for wafers annealed by either method. The temperature dependence of damage removal and carrier activation in the implanted regions during both furnace and transient annealing was also investigated, and demonstrates that the microwave photoconductance technique gives results for donor implantation correlating well with conventional backscattering and electrical measurements, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337779
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  • 8
    Electronic Resource
    Electronic Resource
    Diffusion phenomena and defect generation in rapidly annealed GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1500-1504 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of transient thermal processing of S-doped epitaxial GaAs wafers, both with and without ion-implantation damage being present, has been performed. The average diffusivity of S is given for the temperature range 950–1050 °C, and is shown to be dependent on the position of any lattice damage present, the surface condition (capped or capless), and the annealing regime employed (thermal or rapid thermal). The mobility of the S-doped region is degraded by rapid annealing, and the extent of this degradation is a function of the experimental conditions employed. Implantation of Si (which occupies a Ga site) into S-doped n+ regions (S occupies an As site) failed to increase the electrical activity of the region above the often observed limit of 2×1018 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336083
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  • 9
    Electronic Resource
    Electronic Resource
    Using a neural network to proximity correct patterns written with a Cambridge electron beam microfabricator 10.5 lithography system (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1431-1433 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes our initial results of using a theoretical determination of the proximity function and an adaptively trained neural network to proximity correct patterns written on a Cambridge electron beam lithography system. The methods described are complete and may be applied to any electron beam exposure system that can modify the dose during exposure. The patterns produced in resist show the effects of proximity correction versus noncorrected patterns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103456
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