Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Defects in epitaxial Si-doped GaInP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 260-266 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized by capacitance-voltage and deep level transient spectroscopy measurements the only defect detected in Si-doped GaInP layers. This defect exhibits an ionization energy of 0.435 eV but is located only at ∼20 meV below the bottom of the conduction band. All its characteristics, i.e., energy level, apparent capture barrier, ionization energy, can be understood if the defect is a donor associated DX center. Its cross section for electron and hole capture have been measured. The effect of an electric field on the ionization energy confirms that the defect is indeed shallow and a donor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354156
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Technique for selective etching of Si with respect to Ge (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2328-2329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique to selectively etch silicon with respect to germanium is described. The method relies on an observed small difference in the effects of polymeric etch-inhibiting layers on the two materials. In a CF4/H2 plasma, the observed polymer point for Ge is 1–3% lower than for Si. This produces a narrow process window in which Si is etched while etching of Ge is suppressed. This technique has applications to etching of pure Si layers over Ge as well as Si-Ge alloys for device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100269
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    High conductivity polycrystalline silicon obtained by molecular beam deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 999-1001 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical properties have been investigated of antimony doped polycrystalline silicon films obtained by molecular beam deposition on oxidized silicon substrates. We show that low-resistivity films with smooth morphology are obtained by solid phase crystallization of antimony doped amorphous silicon layers deposited at 250 °C. A resistivity of 4.3 mΩ cm is obtained by crystallizing the films at temperatures as low as 650 °C for 15 min. In situ crystallization of the amorphous silicon is absolutely necessary to achieve low resistivities. We also show that direct deposition above 650 °C gives rise to polycrystalline silicon with much higher resistivities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99199
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1732-1734 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Raman active vibrational modes of single, 1 to 6 layer thick Ge films grown epitaxially on Si(100) and covered by thin layers of Si(100) have been measured. Both the Ge-Ge vibrations from the interior of the Ge films and the Ge-Si vibrations at the Ge-Si interfaces have been observed. These modes and the weak defect activated scattering are used to characterize the Ge layers. These results show that Raman spectroscopy can now be used to directly characterize the properties of buried interfaces at the level of single atomic layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98558
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 486-488 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An interfacial boron spike is formed during the molecular beam epitaxial growth of Si. We show two possible sources for this unintentional spike. We have found that some boron contamination invariably occurs when silicon surfaces are exposed to air. A greater degree of contamination results when the sample is heated to temperatures greater than 800 °C, as required for creating an atomically clean surface prior to molecular beam epitaxial growth. A source of boron suboxides, internal to the ultrahigh-vacuum system, was detected by residual gas analysis. While anneals at 1000 °C or greater result in almost complete activation of the B, we observe that for a cleaning regimen at 850 °C, less than 10% of the boron is active. Our results are consistent with the oxidation of the suboxides on oxygen-contaminated surfaces and their subsequent reduction at higher temperatures by silicon, with the volatization of SiO. Subsequent incorporation is by indiffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99420
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...