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  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (110)GaAs by metalorganic vapor phase epitaxy'' [J. Appl. Phys. 78, 229 (1995)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 562-562 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362719
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  • 2
    Electronic Resource
    Electronic Resource
    Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (100)GaAs by metalorganic vapor phase epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 229-235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural characterization of ZnTe epilayers grown on (100)GaAs by metalorganic vapor-phase epitaxy is reported. A detailed study of the ZnTe/GaAs heterostructure based on both high-resolution and conventional electron microscopy and ion channeling Rutherford backscattering spectrometry allows correlation of the type and spatial distribution of the extended defects occurring at or close to the ZnTe/GaAs interface with the amount of residual lattice strain into the ZnTe epilayers. Both pure edge Lomer and 60°-mixed misfit dislocations were identified at the interface along with partial dislocations bounding stacking faults, their overall density and distance distribution indicating the occurrence of a residual compressive strain at the heterostructure interface. By comparing this interface strain to the corresponding surface value of the same samples the occurrence of an inhomogeneous strain relaxation along the growth direction is clearly demonstrated. It is shown that such a strain gradient should be entirely ascribed to threading dislocations occurring into the ZnTe epilayers, their distribution being strictly correlated to the amount of residual strain along the epilayer growth direction. The conclusions are further supported by the analysis of the ZnTe surface strain, whose dependence on the epilayer thickness is consistent with that expected on the basis of a phenomenological model for the epilayer residual strain relaxation by threading dislocations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360656
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  • 3
    Electronic Resource
    Electronic Resource
    InP/GaAs self-assembled nanostructures: Modelization and experiment (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1931-1933 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial stages of the three-dimensional metal organic vapor phase epitaxy growth of InP/GaAs have been studied by atomic force microscopy and Rutherford backscattering. The results are compared with the predictions of an equilibrium model that predicts an in-plane critical size for island formation. At low growth rates the model fits well the experiments while it needs to be further developed to include kinetic effects at higher growth rates. The experiments indicate a Stranski–Krastanow growth mode with a critical thickness of 2.1 ML. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362944
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  • 4
    Electronic Resource
    Electronic Resource
    On the mechanisms of strain release in molecular-beam-epitaxy-grown InxGa1−xAs/GaAs single heterostructures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1975-1983 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inx Ga1−x As/GaAs single heterostructures have been grown by molecular-beam epitaxy with different growing rates and In molar fractions. Indium composition, layer thickness, and residual strain have been measured mainly by Rutherford backscattering/channeling spectrometry and the results on selected samples compared with the results of other techniques like Auger electron spectroscopy and single- and double-crystal x-ray diffraction. Cathodoluminescence, x-ray topography, transmission electron microscopy, and ion dechanneling have been employed to observe dislocations and to characterize their nature and density. While the onset of misfit dislocations has been found to agree with the predictions of the equilibrium theory, the strain release has been found to be much lower than predicted and the results are compared with the available metastability or nucleation models. Present results are in best agreement with nucleation models. Moreover, annealing experiments show that these heterostructures are at (or very close to) thermodynamic equilibrium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344335
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  • 5
    Electronic Resource
    Electronic Resource
    Explosive crystallization of dilute amorphous Si-Ge alloys (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3301-3303 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural characterization of pulsed laser irradiated amorphous alloys of Si(Ge) obtained with heavy dose (Ge) implantation in Si have been carried out using Rutherford backscattering spectrometry/channeling technique and transmission electron microscopy. Comparison of these alloys with self-implanted amorphous Si after irradiation with a ruby laser showed significant reductions in the laser energy densities required for melt propagation, amorphous-crystalline interface penetration, and laser-induced damage formation. Explosive crystallization was found to occur in all samples. Large reductions in melting temperatures and latent heat of melting were found to be necessary to explain the results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341505
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  • 6
    Electronic Resource
    Electronic Resource
    Strain relaxation in graded composition InxGa1−xAs/GaAs buffer layers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4748-4755 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model to compute the strain relaxation rate in InxGa1−xAs/GaAs single layers has been tested on several compositionally graded buffer layers. The existence of a critical elastic energy has been assumed as a criterion for the generation of new misfit dislocations. The surface strain accuracy results are within 2.5×10−4. The influence of different grading laws and growth conditions on residual strain, threading dislocation density, misfit dislocation confinement, and surface morphology has been studied. The probability of dislocation interaction and work hardening has been shown to strongly influence the mobility and the generation rate of the dislocations. Optimization of the growth conditions removes residual strain asymmetries and smoothes the surface roughness. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371439
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  • 7
    Electronic Resource
    Electronic Resource
    Anomalous distribution of As during implantation in silicon under self-annealing conditions (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2940-2946 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous distribution of As implanted in silicon under self-annealing conditions (i.e., with simultaneous damage recovery activated by beam heating) has been investigated and discussed. Rutherford backscattering/channeling, transmission electron microscopy, and carrier profiling techniques have been used to analyze the dopant profiles and the microstructure of samples irradiated with 150-keV As+ ions at a current density of (approximately-equal-to)207 μA/cm2, for times of 2, 3, 4, 5, and 6 s. Two relevant effects are observed. The first one consists in the formation of two dopant peaks, electrically inactive, separated by a depletion region at the position of the ion projected range. While the deeper peak disappears with increasing irradiation time, the one located at the maximum of nuclear energy loss grows. Microstructural analysis suggests that both peaks occur as a result of As segregation at lattice defects; in particular, the one located the position of the maximum of nuclear energy loss is the consequence of segregation of As atoms at voids, which are formed during irradiation at elevated temperature. The second relevant effect is the formation of a deep penetrating tail in the As profile, which cannot be explained by a simple thermal diffusion mechanism. Although the contribution of channeling effects cannot be ruled out, the effect seems to be mainly related to a diffusivity enhancement, weakly temperature dependent, due to the interaction of the dopant with radiation-induced defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344174
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  • 8
    Electronic Resource
    Electronic Resource
    Silicon loss during TiSi2 formation (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5187-5189 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When Ti-Si diffusion couples are annealed in vacuum to form TiSi2, most of the oxygen contamination in the as-deposited metal film is lost. An experiment demonstrating that a Si loss also takes place is presented, thus confirming that the oxygen loss occurs by SiO sublimation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338297
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  • 9
    Electronic Resource
    Electronic Resource
    Transient annealing as a tool for the investigation of thin-film–substrate solid-phase reactions (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1234-1239 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The solid-phase reaction of a thin film and a substrate induced by a transient annealing in the solid phase is analyzed in detail. The technique is based on the scanning of a line-shaped energy beam. At a given point on the sample the transient process can be considered equivalent to an isothermal one at an effective temperature for an effective time. Whatever the assumed reaction process is, it has an exponential dependence on the temperature; moreover, the real annealing time of the transient treatment is quite short so that the effective temperature can be chosen equal to the maximum value reached and the effective time can be computed by solving the heat equation numerically. The beam scanning induces a temperature gradient on the sample along the scanning direction so that each irradiated point is annealed at slightly different effective temperatures. In the present work the annealing temperatures range from 600 °C up to 1100 °C and the effective times from 0.7 to 1.5 sec, owing to the different experimental conditions. Such ranges make the transient annealing a powerful tool for the investigation of reaction processes on a time scale which is not accessible in a furnace treatment. As an application, the early stages of the reaction between a clean titanium film and a silicon substrate are described in the temperature range 700–900 °C. In this temperature range, the kinetics are first dominated by diffusion through the Ti-rich silicides which are formed. This process, with presumably high activation energy and large preexponential factor, cannot be observed in standard furnace annealing where a continuous TiSi2 layer is formed at the interface during the temperature rise time and the silicon supply is limited by the diffusion through this layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336142
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  • 10
    Electronic Resource
    Electronic Resource
    Growth and structure of titanium silicide phases formed by thin Ti films on Si crystals (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 270-275 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The silicide formation with a titanium film deposited on 〈100〉 single-crystal silicon, has been studied by using nuclear microanalysis, x-ray diffraction, and transmission electron microscopy. The presence of interfacial defects and their possible role in the early stages of the reaction has been evidenced. The phase composition was dependent on the annealing temperature and time: at 550 °C only TiSi2 is observed; at higher temperatures (〉600 °C), a thin TiSi2 layer at the interface is again observed, but Ti-rich silicides grow on top of this layer by increasing the annealing time. For longer annealing times, all the reacted layer progressively transforms into TiSi2. The amount of reacted silicon grows with a (time)1/2 law; the activation energy of 1.8 eV reported for the growth of TiSi2 onto amorphous Si may be appropriate even in this case. The reaction proceeds at a rate of one order of magnitude higher than previously reported for reaction between silicon and an oxygen saturated titanium film. The kinetics seems to be controlled by silicon diffusion through the TiSi2 interfacial layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334799
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