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  • 1
    Electronic Resource
    Electronic Resource
    Resonant spectroscopy of electric-field-induced superlattices (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2857-2861 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A system of interdigital gates is used to create a periodic potential profile in a multilayer heterostructure. The electrostatic problem for the spatial distribution of the potential is solved and experimentally examined by measurements of current–voltage characteristics of resonant-tunnelling diodes embedded in the depletion region of the Schottky contact. It is shown that the position of the resonant peak voltage is sensitive to the spatial potential distribution and that with appropriate parameters of the heterostructure the sensitivity of the gates can be considerably enhanced. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392956
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  • 2
    Electronic Resource
    Electronic Resource
    Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7−x microstriplines on Si and GaAs substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5282-5286 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting microstriplines of YBa2Cu3O7−x have been deposited and patterned on substrates of silicon on sapphire and GaAs. In both substrates fast semiconducting photoswitches were fabricated and integrated into the microstriplines. Short lightpulses of 100 fs length generated electrical pulses in the semiconducting photoswitches. The electrical pulses were launched into the superconducting striplines, where they were detected by electro-optical sampling. This method permits the analysis of the frequency dependence of the YBa2Cu3O7−x surface impedance Zs(T,ν) and the magnetic penetration depth λ(T,ν) in the temperature regime 10≤T≤90 K and the frequency range 10 GHz≤ν≤600 GHz. The Zs and λ measurements showed that the electrical data of the YBa2Cu3O7−x were comparable to those of YBa2Cu3O7−x deposited on LaAlO3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359281
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  • 3
    Electronic Resource
    Electronic Resource
    Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3824-3832 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The shape transformations and the mechanism of misfit strain relaxation of In0.6Ga0.4As islands grown at different temperatures on GaAs(001) substrates have been investigated. Layers with a constant nominal thickness of 12 monolayers were deposited by molecular beam epitaxy on nominal singular and on vicinal substrates. The specimens were characterized by scanning electron microscopy, transmission electron microscopy and high-resolution transmission electron microscopy. It is shown that an increase of the growth temperature yields a shape transition from rounded islands to elongated cigar-like structures. The lattice-parameter mismatch in the circular islands is relaxed by misfit dislocations at lower growth temperatures. Indium desorption effectively reduces the mismatch at higher growth temperatures and therefore yields the nucleation of coherent islands. In spite of this structural transformation an Arrhenius-like behaviour of the island densities is observed with an activation energy which depends on the substrate tilt. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359897
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  • 4
    Electronic Resource
    Electronic Resource
    Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2563-2565 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent conductivity and Hall effect measurements were carried out on molecular-beam epitaxial GaAs layers grown at 200–420 °C and separated from the substrate. An analysis of experimental data with and without considering the hopping Hall mobility was made. An extremely low room temperature Hall mobility of 0.14 cm2 V−1 s−1 was measured in the 250 °C layer, which could be interpreted as the hopping Hall mobility. The room temperature band Hall mobility (μHb) increases from 500 to 6000 cm2 V−1 s−1 and the power (n) of the temperature dependence of μHb (∼T−n) increases from 0.5 to 1.2 with increasing growth temperature from 300 to 420 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117740
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  • 5
    Electronic Resource
    Electronic Resource
    Transport properties of gated resonant tunneling diodes in the single electron regime (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6718-6724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate the transport properties of resonant tunneling diodes with dimensions in the submicron range, small area mesa diodes with surrounding Schottky gates have been processed. The gate turns out to provide excellent current control, which makes a resonant tunneling transistor operation mode feasible for our devices. In the single electron regime very distinct staircase-like features are observed in the current voltage characteristics. An accurate analysis of this staircase characteristic by means of magnetotransport measurements shows that tunneling through defect states can be ruled out as a reason for these current steps. Moreover, we show that the current steps are exclusively due to quantization effects of the gate potential. At high magnetic fields a saturation-like behavior of the step onset voltages occurs as a function of a magnetic field applied parallel to the direction of transport. This effect can be explained by boundary conditions for the electron number and the Fermi level in the electron supply layer next to the double barrier structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368998
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  • 6
    Electronic Resource
    Electronic Resource
    Hybrid superconductor/semiconductor step junctions with three terminals (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 8077-8079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on experimental results with three-terminal superconductor/semiconductor hybrid junctions, which are based on the two-dimensional electron gas at the surface of p-type InAs. A short distance ((approximate)150 nm) between superconducting Nb contacts is obtained using a step geometry. The step geometry allows the realization of different heterostructure potential profiles along the two-dimensional channel. The critical current of the step junctions can be controlled by applying a voltage to highly doped (δ-doped) layers embedded in the heterostructure. With p-δ-doped layers, a p-n junction is introduced in the two-dimensional channel and an asymmetric change of the critical current with respect to the gate voltage or gate current is observed. With n-δ-doped layers, the change is symmetrical. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367905
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  • 7
    Electronic Resource
    Electronic Resource
    Growth mode and strain relaxation during the initial stage of InxGa1−xAs growth on GaAs(001) (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 74-76 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth mode and relaxation of the misfit strain of thin InxGa1−xAs layers grown by molecular-beam epitaxy on GaAs(001) were studied by plan-view transmission electron microscopy. The indium concentration was varied between x=0.13 and x=1.0. The transition from two-dimensional to island growth was found at x=0.4. The island growth mode is characterized by islands of different sizes in various states of strain relaxation which is determined by the density of misfit dislocations at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107379
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  • 8
    Electronic Resource
    Electronic Resource
    Semi-insulating GaAs layers grown by molecular-beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 983-985 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent conductivity and Hall-effect measurements were carried out on molecular-beam epitaxial GaAs layers grown at 420 °C and separated from the substrate. The layers exhibit semi-insulating properties with a room temperature resistivity of (6–7)×106 Ω cm. The electron Hall mobility is proportional to temperature as ∼T−1.1 and the room temperature value is 5900 cm2 V−1 s−1. From the (nHT−3/2) vs T−1 plot, a donor activation energy of 0.68 eV, different than in bulk semi-insulating GaAs, has been evaluated. A similar activation energy is observed in as-grown and annealed GaAs layers grown at 200–350 °C. This indicates that the high resistivity of GaAs grown at low temperatures might be explained by deep donor defects rather than As precipitates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114966
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of electron-electron interaction on hot ballistic electron beams (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3603-3605 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-electron scattering of ballistic electrons in a two-dimensional electron gas was studied as a function of the electron excess energy above the Fermi energy and of temperature. At low temperatures of 1.4 K it is found that for excess energies of approximately 30% of the Fermi energy the electrons in a ballistic electron beam are already scattered significantly due to electron-electron interaction. A very good agreement between our experimental data and theory was found, when the measured data were compared with numerical calculations based on a theory of Giuliani and Quinn [Phys. Rev. B 26, 4421 (1982)], while the agreement was only poor for the analytical approximation of the electron-electron scattering rate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113801
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  • 10
    Electronic Resource
    Electronic Resource
    An optical correlator using a low-temperature-grown GaAs photoconductor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 842-844 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A sampling correlator is described which is useful for characterizing optical pulses with subpicosecond resolution. The correlator exploits the ultrafast nonlinear response of a photoconductor made of low-temperature-grown (LTG) gallium arsenide, which is connected to a coplanar-waveguide line. Instead of using a nonlinear crystal, the LTG-GaAs correlator uses a nonlinearity associated with the transmission line and photoconductor functioning as a voltage divider. The resulting nonlinearity is used to measure the intensity autocorrelation function. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117910
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