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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 872-873 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single and multiple GaInAs/InP quantum well structures with well widths of 0.5–20 nm have been grown by metalorganic vapor phase epitaxy at 20 mbar using TMG, TMI, PH3, and AsH3. Low-temperature (2 K) photoluminescence and transmission electron microscopy were used to characterize the structures obtained for various growth conditions. For the optimized deposition process the interfacial roughness amounts to less than one monolayer. The narrowest exciton linewidth obtained for a 20-nm well was 2.2 meV; the largest energy shift was observed for a 0.5-nm well and amounted to 528 meV.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 933-935 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed picosecond time-resolved measurements on In0.53Ga0.47As/InP quantum wells with varying barrier thicknesses using 10 ps Nd:YAG excitation. For this excitation, holes and electrons are created in the In0.53Ga0.47As layers. Due to momentum conservation the Nd:YAG excitation accelerates the electrons above the InP barrier where they can diffuse but cannot recombine. By examining the rise time of the quantum well emission, we can show that for samples with thick barriers, the barrier geometry largely controls the dynamic properties of the carriers after Nd:YAG excitation.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Ga x In1−x As y P1−y alloys lattice matched to InP substrates are currently used to fabricate optoelectronic and integrated optics devices. To achieve devices with high performances and high fabrication yield, the uniformity and reproducibility of the Ga x In1−x As y P1−y epitaxial layers (composition, thickness, doping, etc.) have become key parameters. These problems have been addressed in the frame of ESPRIT project 2518 and are presented in this paper. Several aspects have been considered starting from the optimization of InP substrates, the MOVPE growth of uniform GalnAsP layers, the material characterization to the validation of material uniformity on passive optical waveguides. Both scanning photoluminescence analysis and waveguide losses measurements performed on 2 inch wafers with a high lateral resolution have shown that high quality uniform GalnAsP layers can be obtained reproducibly on 2″ InP substrates using a commercially available LP-MOCVD growth process. In particular, more than 60% of 36 mm long, 3μm wide and 100μm spaced rib waveguides exhibit losses below 0.8dBcm−1.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 353-356 (Jan. 2001), p. 103-106 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Computing 11 (1973), S. 337-351 
    ISSN: 1436-5057
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Description / Table of Contents: Abstract The lattices of subsemigroups of finite semigroups with exactly one idempotent element and of finite Abelian semigroups are studied; an algorithm for computing them is described.
    Notes: Zusammenfassung Es werden die Unterhalbgruppenverbände endlicher Halbgruppen mit genau einem idempotenten Element und endlicher Abelscher Halbgruppen untersucht und als Computer-Programme realisierte Algorithmen zu ihrer Berechnung angegeben.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Computing 21 (1979), S. 333-342 
    ISSN: 1436-5057
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Description / Table of Contents: Summary Several versions of an algorithm, which is an adaptation of the Todd-Coxeter-algorithm to semigroups, are described. They enumerate a representation by transformations of an abstractly presented semigroups the kernel of this representation being determined by a subsemigroup, which is given by a finite set of generators. The enumeration process stops, if and only if the semigroup faithfully represented in this manner is finite.
    Notes: Zusammenfassung Es wird ein halbgruppentheoretisches Analogon des Todd-Coxeter-Verfahrens in mehreren Varianten beschrieben. Der Algorithmus zählt eine Transformationendarstellung einer abstrakt präsentierten Halbgruppe auf, wobei der Kern der Darstellung durch eine durch Erzeugende gegebene Unterhalbgruppe bestimmt wird. Das Verfahren bricht genau dann ab, wenn die dabei treu dargestellte Halbgruppe endlich ist.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Journal of electronic testing 8 (1996), S. 129-142 
    ISSN: 1573-0727
    Keywords: automaton ; composition ; coupling fault ; multiple fault ; pattern-sensitive fault ; RAM ; semilattice ; stuck-at fault ; testing ; transition fault
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract Cell array faults in random-access memories (RAMs) are usually represented by Mealy automata. In such a model, multiple faults should also be representable by automata; in fact, it should be possible to compute the automaton representing a multiple fault from the automata representing the single faults that make up the multiple fault. In this paper we study properties of binary composition operations on automata that are appropriate for the representation of multiple faults in RAMs. First, we derive a set of generic conditions that every composition operation must satisfy. Second, we develop a set of physical conditions that the composition must satisfy in order to apply to stuck-at, transition and coupling faults in RAMs. Third, we represent the transition table rules used by van de Goor and Smit by a composition operation and prove that this operation satisfies both the generic and physical conditions. Fourth, we point out that in some circumstances, it is appropriate to use a different composition operation (defined by us in a previous paper) to permit a different handling of coupling faults in the presence of stuck-at or transition faults. We compare and relate the properties of the two algebras.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Inflammation research 18 (1986), S. 153-154 
    ISSN: 1420-908X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Of the complement peptides comprising anaphylatoxin activity, only C5a caused a very small (〈1.5%) but statistically significant histamine release from isolated human adenoidal mast cells. C3a and the respective des-Argderivatives were found to be ineffective. In rat peritoneal mast cells, neither peptide caused histamine release.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Algebra universalis 30 (1993), S. 422-446 
    ISSN: 1420-8911
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Abstract We study the notions of independence and dimension as introduced in [2]. These are significantly different from the standard notions as reviewed in [4]. However, from quite a few points of view they deserve careful analysis. Our work was motivated by certain typical constructions in automaton theory.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Semigroup forum 15 (1977), S. 1-20 
    ISSN: 1432-2137
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Type of Medium: Electronic Resource
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