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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1975-1979 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence of AlxGa1−xAs/AlyGa1−yAs heterostructures has been performed in presence of high magnetic fields. Under the magnetic field the broad carbon related peak becomes resolved into several narrow peaks. Experimental results and a theoretical analysis based on the single band model suggest that these peaks are due to the recombination of free electrons with holes bound to neutral carbon atoms distributed in the several atomic layers in the well side of the interfaces of the heterostructures. Magnetic fields reduce the effects of interfacial roughness and make it possible to resolve the carbon related peak into several peaks. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 6082-6099 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The initial stages of nucleation during liquid–liquid phase separation in mixtures of high molecular weight polymers was studied by time-resolved small angle neutron scattering. Phase separation was induced either by decreasing temperature or by increasing pressure. One of the blend components was labeled with deuterium to obtain sufficient scattering contrast between the components. The general features of nucleation were independent of quench depth and the nature of the quench (temperature quench versus pressure quench). The early stages of nucleation consisted of amplification of concentration fluctuations. During this stage, the scattered intensity (I) in the low scattering vector (q) limit was consistent with the Ornstein–Zernike equation. This enabled the determination of the characteristic length scale of the growing fluctuations, ξ. The I vs q behavior at intermediate scattering vectors (q〉1/ξ) could be described by a power law (I∼q−d). We demonstrate the existence of a time–temperature superposition principle during nucleation: The time dependence of d at different quench depths could be superimposed by a lateral shift of the data along the time axis (log scale). In analogy to the shift factor for viscoelastic behavior of polymers, we define a nucleation shift factor, aN, which describes the slowing down of nucleation kinetics with decreasing quench depth. Similarly, nucleation after pressure quenches can be described by a time–pressure superposition law. For each quench, we find that the scattering intensity is independent of time in the high q regime (q〉qmerge). This implies the absence of growing structures with length scales smaller than ξcrit=1/qmerge during nucleation. This aspect of nucleation is consistent with classical theories which predict the existence of a critical nucleus size. As expected, ξcrit increases with decreasing quench depth. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 5173-5176 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The kinetics of microemulsion formation in a multicomponent blend of two homopolymers and a block copolymer was studied by neutron scattering. The scattering profiles indicate the presence of large length-scale defects that coexist with the periodic microemulsion. With time, the large-scale structures undergo coarsening, while the periodic structures undergo refinement, i.e., they become more organized. The defect density at a given temperature can be controlled to some extent by thermal history. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 1957-1971 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Spinodal decomposition in multicomponent mixtures of two homopolymers and a block copolymer was studied by a combination of neutron and light scattering experiments. Mixtures of nearly monodisperse polyolefins—polymethylbutylene (Mw=1.7×105 gm/mol), polyethylbutylene (Mw=2.2×105 gm/mol), and a symmetric polymethylbutylene-block-polyethylbutylene (Mw=4.6×104 gm/mol) were studied, following relatively deep quenches into the spinodal region −χ/χs ranged from 1.7 to 2.4 (χ is the Flory–Huggins interaction parameter at the experimental temperature and χs is the Flory–Huggins interaction parameter at the spinodal temperature). The ratio of homopolymer volume fractions was kept constant at unity, and the block copolymer volume fraction was varied from 0.0 to 0.2. The evolution of structure was followed over five decades of real time—1 min to 1 month. During this time, the characteristic length scale of the phase separated structure increased from 10−1 to 10 μm. The early stages of spinodal decomposition, captured by time-resolved neutron scattering, were compared with theoretical predictions based on the random phase approximation (RPA). Qualitative agreement was obtained. The intermediate and late stages, studied by light scattering, followed classic signatures of binary spinodal decomposition. Experimental evidence indicates that the block copolymer is uniformly distributed throughout the sample during all stages of the decomposition. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconductivity (PC) measurements on as-grown, annealed, hydrogenated, and hydrogenated and annealed In-doped CdTe epitaxial films grown on p-CdTe (211) substrates by molecular beam epitaxy have been performed in order to investigate the behavior of the trapping times of minority carriers in In-doped CdTe films due to annealing and hydrogenation. The results of the PC decay curve showed a slow component with a time constant of a few milliseconds and this behavior was related to the existence of deep trap levels corresponding to minority carriers. The activation energies of the traps, as determined from the temperature dependence of the PC decay times, were (Ev+0.35) and (Ev+0.43) eV for the as-grown and hydrogenated In-doped CdTe epilayers, respectively. The trapping times of the minority carriers were significantly reduced by the hydrogenation treatment. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1668-1670 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface emitting laser operation at room temperature at λ=496 nm by ps pulsed optical injection has been demonstrated in a II–VI separate confinement heterostructure containing three 80 A(ring) thick (Zn,Cd)Se quantum wells (QW). The vertical cavity was formed by low loss, dielectric, distributed Bragg mirrors, yielding a quality factor for the structure of approximately Q≈2000. The room-temperature threshold excitation corresponds to an absorbed optical energy density of 1.4 μJ/cm2 or, equivalently, to an estimated electron-hole pair density of 1×1012 cm−2. At T=200 K, quasicontinuous wave operation was obtained at an average output power of up to 1 mW and an output/input conversion efficiency of 20%. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2756-2758 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have obtained optically pumped laser action in the form (Zn,Cd)Se/ZnSe single quantum well structures prepared by molecular beam epitaxy. Near-room-temperature lasing under pulsed excitation has been achieved and high repetition quasi-continuous mode operation at temperatures so far up to 120 K. Rapid gain switching has generated pulses of approximate 20 ps in duration.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on studies of optically pumped laser action in (Zn,Cd)Se/ZnSe multiple quantum well structures prepared by molecular beam epitaxy on lattice-matched bulk (Ga,In)As substrates. Room-temperature lasing under pulsed excitation with threshold pump intensity at I≈500 kW/cm2 has been achieved, together with high repetition "quasi-continuous'' mode operation at temperatures so far up to 100 K.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1447-1449 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsxSb1−x/InP1−x−yAsxSby double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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