Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Transport property of Si/Si1−xGex/Si p-type modulation doped double heterostructure (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2544-2546 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High mobility Si/Si1−xGex/Si p-type modulation-doped double heterostructures with Ge fractions of 0.2, 0.25, 0.3 have been grown by rapid thermal process/very low pressure-chemical vapor deposition. Hole Hall mobilities as high as ∼300 cm2/V s (at 293 K and sheet carrier concentration of ∼2.6×1013 cm−2) and ∼8400 cm2/V s (at 77 K and sheet carrier concentration of ∼1.2×1013 cm−2) have been obtained for heterostructures with x=0.3. The variation of hole mobility with temperature and the influence of the Ge fraction on hole mobility were investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357569
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Measurements of the diffusion coefficients of atomic chlorine in rare gases (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 5095-5101 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The technique for measuring the diffusion coefficients of reactive atomic species through their radiative recombination reactions is applied to multicomponent mediums. A series of diffusion coefficients of chlorine atoms in chlorine molecules mixed with rare gases M(He, Ne, Ar, Kr, and Xe) were measured for various Cl2 and M mole fractions. By extrapolating to zero molecular chlorine pressure, the diffusion coefficients of chlorine atoms in rare gases were obtained. The measured values of the diffusion constant are DCl–He =0.75±0.12, DCl–Ne =0.32±0.05, DCl–Ar =0.19±0.03, DCl–Kr =0.14±0.02, and DCl–Xe =0.12±0.02 cm2/s, respectively, at 296 K and 1 atm rare gas pressure. The corresponding hard sphere collision diameter of chlorine atoms in rare gases was calculated and a comparison was made between the diffusion coefficients of Cl–rare gas and Ar–rare gas systems at 296 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.450662
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Photoionization studies of KH2O, KNH3, K2NH2, and K2OH molecular complexes (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 2553-2558 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoionization efficiency measurements of KH2O, KNH3, K2NH2, and K2OH molecular complexes are reported. Using a quadrupole mass spectrometer, a conventional light source, and a flow reactor, the molecular complexes between potassium atoms and water or ammonia molecules were generated and then detected by photoionization mass spectrometry. The photoionization efficiency curves were deconvoluted and the photoionization threshold energies of the complexes were determined. The photoionization threshold energies of KH2O, KNH3, K2NH2, and K2OH are measured to be 3.92±0.04, 3.87±0.04, 3.94±0.08, and 3.55±0.08 eV, respectively. The bond dissociation energies of K–H2O, K–NH3, and K–KOH are determined to be 0.25±0.08, 0.33±0.08, and 0.86±0.19 eV, respectively. Comparison is made between the experimental results and the theoretical values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457948
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Measurements of the diffusion coefficients of atomic bromine in rare gases (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 1626-1630 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The laser-photolysis-recombination-luminescence-detection method was employed to measure the diffusion coefficients of Br–rare-gas systems. The measured values are DBr–He=0.66 ±0.11, DBr–Ne=0.25±0.04, DBr–Ar=0.16±0.03, DBr–Kr=0.12±0.02, and DBr–Xe =0.086±0.015 cm2/s, respectively, at 1 atm and 300 K. Also, the diffusion coefficient of Br–Br2 was measured to be 0.065±0.011 cm2/s. A comparison was made with the results calculated from the potential curves obtained by the crossed molecular beam experiments for the Br–Ar, Br–Kr, and Br–Xe systems, and with the datum of Br–Ar measured by the time resolved–mass spectrometry. The extent of the similarity of the diffusion constants between the Kr–rare-gas systems and the Br–rare-gas systems was discussed over the temperature range of 250K to 1050 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457122
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Ti/Al/Pt/Au and Al ohmic contacts on Si-substrated GaN (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 218-220 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al and Ti/Al/Pt/Au ohmic contacts on GaN epitaxial layers were studied. The epilayers were grown on Si (111) substrates by low-pressure metalorganic chemical vapor deposition. Al/GaN contacts achieved a minimum contact resistivity of 7.5×10−3 Ω cm2 after annealing in N2 ambient at 450 °C for 3 min. Further annealing degraded the contacts. Ti/Al/Pt/Au and GaN contacts achieved a minimum contact resistivity of 8.4×10−5 Ω cm2 after annealing in N2 at 650 °C for 20 s. The Ti/Al/Pt/Au contacts on GaN showed a better thermal stability than Al/GaN contacts. After annealing at 600 °C for 30 min. they were still ohmic contacts. The mechanisms for ohmic contact formation of Ti/Al/Pt/Au contacts were also analyzed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385189
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111) (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 444-446 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN metal–semiconductor–metal photoconductive detectors have been fabricated on Si(111) substrates. The GaN epitaxial layers were grown on Si substrates by means of metalorganic chemical-vapor deposition. These detectors exhibited a sharp cutoff at the wavelength of 363 nm and a high responsivity at a wavelength from 360 to 250 nm. A maximum responsivity of 6.9 A/W was achieved at 357 nm with a 5 V bias. The relationship between the responsivity and the bias voltage was measured. The responsivity saturated when the bias voltage reached 5 V. The response time of 4.8 ms was determined by the measurements of photocurrent versus modulation frequency. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127004
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Properties of Schottky contact of Al on SiGe alloys (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1123-1125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of Schottky contacts of Al on p-Si1−xGex alloys were investigated. The Si1−xGex strained layers were grown on p-Si substrates by using rapid thermal process/very low pressure-chemical vapor deposition. Low reverse currents were obtained. It was found that the Schottky barrier height of Al/p-Si1−xGex contacts decreased with increasing Ge fraction. The decrement is in accordance with the decrement of the band gap of the strained Si1−xGex. The Fermi level at the interface is pinned at about 0.43 eV below the conduction band. The influence of strain relaxation for SiGe alloy layers and the Si sacrificial cap layers on the properties of Schottky contacts were also investigated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115733
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Studies of metal–ferroelectric–GaN structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2416-2417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaN-based metal–insulator–semiconductor (MIS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 instead of conventional oxides as insulator gate. Because of the polarization field provided by ferroelectric and the high dielectric constant of ferroelectric insulator, the capacitance–voltage characteristics of GaN-based metal–ferroelectric–semiconductor (MFS) structures are markedly improved compared to those of other previously studied GaN MIS structures. The GaN active layer in MFS structures can reach inversion just under the bias of smaller than 5 V, which is the generally applied voltage used in semiconductor-based integrated circuits. The surface carrier concentration of the GaN layer in the MFS structure is decreased by one order compared with the background carrier concentration. The GaN MFS structures look promising for the practical application of GaN-based field effect transistors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125032
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Aluminum and GaN contacts on Si(111) and sapphire (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3140-3142 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al and GaN contacts on both Si(111) and sapphire substrates were studied in this letter. After annealing at 450, 520, 600, and 650 °C for 35 min under a N2 flowing ambient, the current–voltage characteristics of Al/GaN contacts on Si(111) substrates were different from those on sapphire ones. The interfacial properties were discussed using the Schottky emission model in which the current is proportional to the square of the applied voltage. The metallurgical reactions were analyzed using photoluminescence (PL) spectra and x-ray diffraction (XRD). After annealing, blueshifts in the PL spectra and new peaks in the XRD data indicated that the wide-band gap interfacial phase AlGaN was formed at the Al/GaN interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1325402
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Diffusional chemical kinetics of reactive species generated in laser fields (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 8757-8762 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100175a063
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...