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  • 1
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry and Raman study of fluorinated nanocrystalline carbon thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 813-818 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using spectroscopic ellipsometry and Raman spectroscopy, we measured the pseudodielectric function and the phonon frequencies of fluorinated nanocrystalline carbon (nc-C:F) thin films grown on silicon substrate at varying growth temperature and gas flux ratio of CH4 and CF4. Utilizing the Tauc–Lorentzian formula, we performed multilayer analysis to estimate the dielectric function of the fluorinated nanocrystalline carbon thin films. We also adopted Gaussian-like density-of-states model proposed by Demichelis et al. [Phys. Rev. B 45, 14364 (1992)] and estimated the amplitude A, the transition energy Eπ, and the broadening σπ of π→π* transitions. Based on this model, we explained the change of the optical gap and the refractive index in terms of the change of the amplitude A rather than the shift of transition energy Eπ of π→π* transitions. Raman and ellipsometric study suggested that the average size of nanocrystallites in the fluorinated carbon thin films was smaller than that of amorphous hydrogenated carbon films studied by Hong et al. [Thin Solid Films 352, 41 (1999)]. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378337
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  • 2
    Electronic Resource
    Electronic Resource
    Ellipsometric study of InAs wetting layer in InAs/GaAs quantum dots at the threshold of quantum dot formation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2290-2295 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using room temperature spectroscopic ellipsometry, we measured the pseudo-dielectric function of self-assembled InAs/GaAs quantum dots at the onset of quantum-dot nucleation in the spectral range from 0.8 to 6 eV. The nominal In coverage varied from 1 to 2.6 ML. In addition to the quantum-dot-related feature at 1.1 eV, we observed two high energy transitions near 1.34 and 1.38 eV which arose from the InAs wetting layer. These two high energy features merged in 1-ML-thick wetting layer. We fitted the dielectric function of InAs wetting layer in the visible range performing multilayer analysis, and found strong excitonic enhancement and blue shift of the E1 peak. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1391413
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  • 3
    Electronic Resource
    Electronic Resource
    Visible-near ultraviolet ellipsometric study of Zn1−xMgxSe and Zn1−xBexSe alloys (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 878-882 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report pseudodielectric function data 〈ε〉=〈ε1〉+i〈ε2〉 of Zn1−xMgxSe and Zn1−xBexSe samples grown on GaAs substrates. The data were obtained from 1.5 to 6.0 eV using spectroscopic ellipsometry. Critical point parameters were obtained by fitting model line shapes to numerically calculated second energy derivatives of 〈ε〉, from which the bowing parameters and spin-orbit-splitting Δ1 of the E1 and E1+Δ1 gaps were obtained. A transfer of oscillator strength from E1+Δ1 to E1 with increasing Mg and Be composition and a positive bowing of these threshold energies are attributed to the k-linear interaction, which is large in small-band gap semiconductors. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373750
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  • 4
    Electronic Resource
    Electronic Resource
    Optical determination of the heavy-hole effective mass and exciton binding energy for a Si0.83Ge0.17/Si quantum well (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6327-6329 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the diamagnetic shift of band-edge luminescence, no-phonon peak, and phonon sideband from a pseudomorphic, undoped Si0.83Ge0.17/Si quantum well using high-field magnetoluminescence spectroscopy. The quadratic dependence of the diamagnetic shift of the no-phonon luminescence peak suggests that the luminescence originates from excitons. Using a variational calculation, we determine the effective heavy-hole mass and the exciton binding energy to be 0.27m0 and 14.8 meV, respectively, and compare these results with reported values obtained from other measurement techniques. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360514
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  • 5
    Electronic Resource
    Electronic Resource
    Dielectric function of biaxially strained silicon layer (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3153-3155 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dielectric functions of strained silicon layers grown on very thick, relaxed Si1−xGex (x=0.115, 0.3, and 0.37) layers are presented. The effect of tetragonal biaxial strain to the dielectric function is observed to be large near the E1 gap region. We compare the strain-induced change in the dielectric function of silicon layers with that of SiGe layers and the elasto-optical (or piezo-optical) constants of silicon which were measured from bulk Si under uniaxial compressive stress. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115808
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  • 6
    Electronic Resource
    Electronic Resource
    Origin of dislocation-related photoluminescence bands in very thin silicon–germanium layers grown on silicon substrates (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3823-3825 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the photoluminescence spectra of very thin and partially strained Si1−xGex (0.2≤x≤0.5) layers grown on silicon substrates with varying degrees of strain relaxation. We observed photoluminescence lines, so-called D lines, which arise from dislocations in the Si1−xGex/Si alloys. Surprisingly, we observed no D lines originating from the Si1−xGex layers. We identify the origin of the D lines as the penetrated dislocations in the Si substrates extending from the SiGe/Si interface with the assistance of transmission electron microscopy. We discuss possible mechanisms of the dominance of luminescence from the dislocations in the Si substrates over those in the SiGe layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120516
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  • 7
    Electronic Resource
    Electronic Resource
    Optical study of ZnSexTe1−x alloys using spectroscopic ellipsometry (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2997-2999 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report pseudodielectric function data 〈ε〉=〈ε1〉+i〈ε2〉 of ZnSexTe1−x samples grown on GaAs substrates. The data were obtained from 1.5 to 6.5 eV using spectroscopic ellipsometry. Critical-point parameters were obtained by fitting model line shapes to numerically calculated second-energy derivatives of 〈ε〉. The bowing parameters of E0, E1, and E1+Δ1 were determined and were comparable to that of E0 quoted from the literature. We observed a monotonic increase of the linewidth of the E1 gap up to x=0.85, whereas that of E1+Δ1 showed a maximum value near x=0.5. We attribute this anomalous broadening of the E1 gap to sample microstructures developed in the low-Te composition alloys. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323999
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  • 8
    Electronic Resource
    Electronic Resource
    Ellipsometric study of sinusoidally modulated ZnSeTe superlattices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 737-739 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an optical study of sinusoidally modulated ZnSeTe superlattices using spectroscopic ellipsometry. The pseudodielectric function 〈ε〉=〈ε1〉+i〈ε2〉 was determined for the photon energy range 1.5–6.5 eV and critical point parameters were obtained by fitting model line shapes to numerically calculated second energy derivatives of 〈ε〉. As the degree of the compositional modulation of the superlattice increased, the energies of E1−R1 and E1+Δ1−R1 either decreased or increased depending on the superlattice period. We explain this behavior in terms of an interlayer coupling and quantum-confinement effect characteristic, respectively, for the two geometries. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1391235
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  • 9
    Electronic Resource
    Electronic Resource
    Luminescence from dislocations in silicon-germanium layer grown on silicon substrate (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1771-1774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the temperature and power dependence of the photoluminescence spectra which arose from the dislocations at the hetero-interface of very thin and partially strained Si0.6Ge0.4 alloys grown on silicon substrates. The temperature dependence of the integrated intensities of the Si D lines was compared to the literature. We attribute the absence of the SiGe D lines to the combined effect of the small conduction band offset and the large capture probability of the carriers by the dislocations in the underlying Si substrate. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369322
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  • 10
    Electronic Resource
    Electronic Resource
    One mode behavior of LO phonon-plasmon interaction in n-type doped In0.5Ga0.5P/GaAs alloys (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1899-1904 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dopant effect of In0.5Ga0.5P/GaAs epitaxial layers has been studied using Raman spectroscopy. Our study of the LO phonon-plasmon interaction shows one mode behavior even though In1−xGaxP alloys are known to have partial two model behavior. We attribute this apparent one mode behavior to enhanced charge transfer from In–P bonds to Ga–P bonds which is induced by the local lattice distortion originating from bond length mismatch. Our work also shows a TOm mode between the InP-like LO mode and the GaP-like LO mode. In terms of this TOm mode, we discuss the valley depth ratio, b/a, which was formerly attributed in the literature to CuPt-type ordering without clear explanation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364045
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