Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
81 (1997), S. 2590-2595
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Heat transport in 20–300 nm thick dielectric films is characterized in the temperature range of 78–400 K using the 3ω method. SiO2 and SiNx films are deposited on Si substrates at 300 °C using plasma enhanced chemical vapor deposition (PECVD). For films 〉100 nm thick, the thermal conductivity shows little dependence on film thickness: the thermal conductivity of PECVD SiO2 films is only ∼10% smaller than the conductivity of SiO2 grown by thermal oxidation. The thermal conductivity of PECVD SiNx films is approximately a factor of 2 smaller than SiNx deposited by atmospheric pressure CVD at 900 °C. For films 〈50 nm thick, the apparent thermal conductivity of both SiO2 and SiNx films decreases with film thickness. The thickness dependent thermal conductivity is interpreted in terms of a small interface thermal resistance RI. At room temperature, RI∼2×10−8 K m2 W−1 and is equivalent to the thermal resistance of a ∼20 nm thick layer of SiO2 . © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363923
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