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  • 1
    Electronic Resource
    Electronic Resource
    Optical and transport properties of single quantum well infrared photodetectors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1826-1831 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed an extensive series of measurements on symmetrical barrier bound-to-continuum and asymmetrical barrier bound-to-bound quantum well infrared photodetectors consisting of only a single well. We find that the behavior of the optical (e.g., responsivity) and transport properties (e.g., gain) as a function of bias is strikingly different from that of the usual multi-quantum well detectors. The simplicity of the structure has allowed an accurate theoretical calculation of the potential drops across each barrier, the photoinduced carrier depletion in the quantum well and therefore a detailed understanding of the device physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354789
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  • 2
    Electronic Resource
    Electronic Resource
    Continuous wave spectral width of surface-emitting lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1326-1327 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the continuous wave spectral width of GaAs gain-guided surface-emitting lasers are reported. The linewidth is found to vary inversely as the output power with a linewidth-power product of 92 MHz. This value agrees well with the calculated result. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358939
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  • 3
    Electronic Resource
    Electronic Resource
    Optimization of two dimensional gratings for very long wavelength quantum well infrared photodetectors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4989-4994 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed a detailed study of two-dimensional grating coupling for quantum well infrared photodetectors in the very long wavelength spectral region λ∼16–17 μm. Using calculations based on the modal expansion method we quantitatively explain the double peaked responsivity spectrum. By optimizing the grating parameters we achieve a normal incidence responsivity and detectivity which are three times larger than the 45° angle of incidence geometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357209
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  • 4
    Electronic Resource
    Electronic Resource
    High-power cw vertical-cavity top surface-emitting GaAs quantum well lasers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1855-1857 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have devised a novel vertical-cavity top surface-emitting GaAs quantum well laser structure which operates at 0.84 μm. The laser combines peripheral current injection with efficient heat removal and uses only the epitaxially grown semiconductor layers for the output mirrors. The structure is obtained by a patterned deep H+ implantation and anneal cycle which maintains surface conductivity while burying a high resistance layer. Peripheral injection of current occurs from the metallized contact area into the nonimplanted nonmetallized emission window. For 10-μm-diam emitting windows, ∼4 mA thresholds with continuous-wave (cw) room-temperature output powers (approximately-greater-than)1.5 mW are obtained. Larger diameter emitting windows have maximum cw output powers greater than 3 mW. These are the highest cw powers achieved to date in current injected vertical-cavity surface-emitting lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104038
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  • 5
    Electronic Resource
    Electronic Resource
    Transverse mode dynamics in vertical cavity surface emitting lasers excited by fast electrical pulses (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 590-592 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of the transient multimode dynamics of vertical cavity surface emitting lasers excited by short (100–200 ps rise times, 1 ns duration) electrical pulses. Fast changes on the spatial distribution of the output power and strong mode competition are observed. Numerical simulations show that the observed dynamics are due to the partial overlap of the different transverse modes through spatial hole burning. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116477
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  • 6
    Electronic Resource
    Electronic Resource
    Experimental observation of vertical cavity with polarization birefringence using asymmetric superlattice (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1045-1047 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vertical cavity etalons with asymmetric superlattice claddings have been fabricated. As predicted earlier, the cavities with sawtooth superlattice claddings grown on (100) oriented substrate are birefringent with the new optical axes along (011) and (01¯1) directions. The difference in the resonant wavelengths of the cavity modes polarized along (011) and (01¯1) are measured to be about +0.3 and −0.3 A(ring) for the two senses of our sawtooth superlattice structures. The change of the sign of the wavelength shift indicates that the observation is not due to an electro-optic effect of the incorporated p-n junction but is due to the reduction of the III-V crystalline symmetry by the presence of the asymmetric superlattice. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114459
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  • 7
    Electronic Resource
    Electronic Resource
    Iron-doped semi-insulating InP grown by chemical beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2336-2338 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared Fe-doped InP epilayers by chemical beam epitaxy using a thermal atomic Fe beam. Epilayers having high resistivities ((approximately-greater-than)107 Ω cm) were obtained over a wide range of Fe concentrations. Resistivities as high as 1.3×108 Ω cm have been obtained. Such resistivity is almost equal to the theoretical value of 1.37×108 Ω cm that we estimate for intrinsic InP. The current-voltage characteristics exhibit both an ohmic and a space-charge-limited regime, and are consistent with the theory of single-carrier injection into a trap-free insulator. Pinning of the Fermi level near midgap by Fe-related deep levels is the mechanism by which the epilayer is made highly resistive. At room temperature, these traps are apparently deep enough that the carrier emission rate is negligible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101120
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  • 8
    Electronic Resource
    Electronic Resource
    In situ observations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1605-1607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe in situ electron microscrope observations of the motion of misfit dislocations in Ge0.3Si0.7/Si(100) heterostructures. A 350 A(ring) Ge0.3Si0.7/Si(100) structure is grown by molecular beam epitaxy at 550 °C. Although this is below the critical thickness for this composition and growth temperature, we observe misfit dislocation nucleation and propagation as a function of in situ annealing temperature in the electron microscope. This confirms the metastable nature of GeSi strained-layer growth. The misfit dislocation density increases continuously with temperature, passing through an accelerated transition at ∼850 °C. We also report preliminary measurements of misfit dislocation velocity, which establish the identical relationship between threading and misfit dislocations in this system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99055
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  • 9
    Electronic Resource
    Electronic Resource
    GexSi1−x strained-layer heterostructure bipolar transistors (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1089-1091 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double heterostructure bipolar transistors with the base region consisting of a p-Ge0.5Si0.5 strained-layer superlattice have been grown by molecular beam epitaxy. At a wavelength of 1.3 μm, optical gain as high as 52 has been achieved in two-terminal phototransistors. The large photocurrent is inferred to be a product of the transistor gain, on the order of 20, and avalanche multiplication. A differential current gain of 10 has been obtained in the three-terminal bipolar transistors. The incorporation of a narrow band-gap GexSi1−x superlattice base is expected to result in higher emitter injection efficiency as compared to Si bipolar transistors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99220
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  • 10
    Electronic Resource
    Electronic Resource
    Role of strained layer superlattices in misfit dislocation reduction in growth of epitaxial Ge0.5Si0.5 alloys on Si(100) substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4723-4729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the role of strained layer superlattices in threading dislocation reduction in the growth of Ge0.5Si0.5 alloys on Si(100) substrates by molecular-beam epitaxy. Several superlattice structures are studied with zero, negative, and positive net strains with respect to a Ge0.5Si0.5 buffer layer. Control samples consisting of uniform strained layers are also grown for each superlattice structure. Transmission electron microscopy analysis of defect densities is found to be hampered by defect losses from thin foils, particularly in the plan view geometry. It is found that although strained interfaces are effective at deflecting threading dislocations into the interfacial plane, little surface threading dislocation density reduction is observed as a function of the presence of the superlattices for dislocation densities of the order 108 cm−2. This observation may be understood in terms of threading dislocation propagation at strained interfacial planes, and a simple predictive model is developed for defect interaction probabilities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343223
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