Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
82 (1997), S. 4637-4646
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A comprehensive understanding of the physics of a graded band-gap, photovoltaic detector has been achieved through a full scale finite difference simulation of the semiconductor equations and the Poisson equation in time and space. The results show that three characteristic times, Maxwell's dielectric relaxation time, the electron transit time across a graded device period, and the minority electron lifetime, govern the transient response of the device completely. Varying device parameters to control these characteristic times will enable tailoring of device structures to optimize responsivities for applications requiring picosecond to nanosecond response speeds. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.366202
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