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  • 1
    Electronic Resource
    Electronic Resource
    Structural and optical characterization of ZnSe single crystals grown by solid-phase recrystallization (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2983-2989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate by high-resolution x-ray diffraction (HRXRD), temperature-dependent photoluminescence (PL) and reflectivity spectroscopies, and low-temperature selective-photoluminescence spectroscopy ZnSe single crystals grown by solid-phase recrystallization. HRXRD reveals the high structural perfection of the samples which exhibit rocking-curve linewidths in the 15–20 arcsec range. The low-temperature PL spectra are dominated by the so-called Ideep1 excitonic line, a neutral-acceptor bound-exciton line I1, the free-exciton emission FX, and the n=2 excited state of FX. We identify the main residual impurities to be Li acceptors. Donor–acceptor pair bands are very hardly detected at low temperature which indicates a low donor content. A major characteristics of these samples is the quasi-absence of any Cu-related deep emission which generally plagues the PL spectra of bulk ZnSe. Consequently, Ideep1 is ascribed to Zn-vacancy–donor complexes. Finally, from the temperature dependence of the PL emission and reflectivity, the band-gap energy of bulk ZnSe is found to linearly shrink with the temperature above 80 K at a rate of −4.3×10−4 eV K−1. The room-temperature gap is estimated to 2720±2 meV. Our results indicate that solid-phase recrystallization produces ZnSe samples with the highest structural quality and purity achievable at present time. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363155
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of the photoluminescence of Zn1−xCdxSe/ZnSe strained-layer quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 103-105 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate by temperature-dependent photoluminescence (PL) spectroscopy between 9 K and 300 K Zn1−xCdxSe/ZnSe strained-layer quantum wells (QWs) with Cd contents ranging between 12% and 19% and QW thicknesses between 9 and 175 A(ring), i.e., with confinement energies up to 220 meV. In the whole temperature range the PL spectra are dominated by E1-HH1 free-exciton recombinations. Between 9 and 300 K the intensity of this line is reduced by three to four orders of magnitude while transitions involving excited states progressively emerge. An analysis of the thermal quenching of the PL intensity reveals that for all confinement energies the escape of excitons out of the QWs is the mechanism responsible for this quenching near 300 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115496
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  • 3
    Electronic Resource
    Electronic Resource
    Measurement of the critical thickness of ZnCdSe quantum wells in ZnSe barrier layers by the piezoelectric effect (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3141-3143 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The occurrence of the piezoelectric effect in a strained zincblende semiconductor layer grown on an (h11) plane results in an internal electric field which can be observed through the optical properties. We report a study of Zn0.85Cd0.15Se/ZnSe quantum wells grown on (211)B GaAs substrates where the quantum confined Stark effect due to the internal field shifts the luminescence to longer wavelengths provided that the quantum well layer is strained. When the well width is greater than the critical thickness the layer begins to relax and the internal field decreases. We have used these measurements to determine that the critical thickness for the onset of strain relaxation of the Zn0.85Cd0.15Se quantum wells grown on (211) oriented substrates is 20 nm. The method will be applicable to materials such as the nitride semiconductors with wurtzite symmetry. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122699
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence study of ZnSe single crystals grown by solid-phase recrystallization (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1356-1358 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate through low-temperature photoluminescence (PL) and selective photoluminescence (SPL) spectroscopies, ZnSe single crystals grown by solid-phase recrystallization. The PL spectra are dominated by the so-called I1deep excitonic line, a neutral–acceptor bound–exciton line I1, the free-exciton emission FX, and the n=2 excited state of FX. We identify the main residual impurities. Donor–acceptor pair bands are hardly detected. A major characteristic of these samples is the quasiabsence of any Cu-related deep emission which generally plagues the PL spectra of bulk ZnSe. Consequently, I1deep is ascribed to an exciton bound to Zn-vacancies related acceptors. Our results indicate that these ZnSe samples are of high quality and that solid-phase recrystallization is a promising technique to prepare ZnSe epitaxial substrates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116078
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  • 5
    Electronic Resource
    Electronic Resource
    Excitonic properties of MgS/ZnSe quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3755-3757 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic field and temperature dependent measurements are used to study the excitonic properties of high quality ZnSe quantum wells in MgS barriers grown by molecular beam epitaxy. The small inhomogeneous broadening of the samples allows the observation of higher excited exciton states. Due to the large difference in band gap between ZnSe and MgS a value of 43.9 meV was measured for the exciton binding energy which is the largest reported for this material system. The full width at half maximum of the heavy hole transitions is measured as a function of temperature and the broadening of the excitonic transitions in narrow quantum wells is reduced compared to the ZnSe bulk value due to the expected reduction in the LO-phonon scattering. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331095
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  • 6
    Electronic Resource
    Electronic Resource
    Growth of zinc blende MgS/ZnSe single quantum wells by molecular-beam epitaxy using ZnS as a sulphur source (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3929-3931 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc blende MgS has been grown on GaAs by molecular beam epitaxy using a novel method where the sources were Mg and ZnS. A reaction at the surface results in the formation of MgS layers with a Zn content estimated by secondary ion mass spectrometry and Auger spectroscopy to be between 0.5% and 2%. Double crystal x-ray rocking curve measurements of ZnSe/MgS/ZnSe layers show layers with good crystallinity. Using this growth technique layers up to 67 nm thick have been grown. Photoluminescence measurements of MgS/ZnSe/MgS single-quantum-well structures show that the confinement of the heavy hole excitons can be as large as 430 meV for a 1.7 nm well. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126824
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  • 7
    Electronic Resource
    Electronic Resource
    Low-rate fracture behaviour of magnesium hydroxide filled polypropylene block copolymer (1998)
    Springer
    Polymer bulletin 41 (1998), S. 615-622 
    Details
    ISSN: 1436-2449
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Summary This paper presents the fracture behaviour of injection-moulded magnesium hydroxide filled polypropylene block copolymer (PP) as a function of the filler content, and it is compared to that of the unfilled PP. The J-integral concept was applied from tests carried out on SENB specimens according to the European Structural Integrity Society (ESIS) protocol for plastics. The results show lower fracture toughness (J IC) as the filler content increases in the composite, what is explained on the basis of morphological details.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002890050409
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  • 8
    Electronic Resource
    Electronic Resource
    Time-resolved photoluminescence and steady-state optical investigations of a Zn1−x Cd x Se/ZnSe quantum well (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1435-1440 
    Details
    ISSN: 0392-6737
    Keywords: Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter ; Photoluminescence ; II–VI compounds and other chalcogenides ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We report on time-integrated and time-resolved optical experiments performed on a 26 Å thick Zn0.85Cd0.15Se/ZnSe quantum well, for temperatures in the 10–200 K range. Excitation spectroscoy allows an estimation of the relative valence band offset, which is found to be 10%. From the temperature variation of the decay time of the photoluminescence performed reasonantly on the e1h1 excitonic transition, we deduce that the main non-radiative mechanism is the heavy-hole thermal escape out of the well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457223
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