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  • 1
    Publication Date: 2020-11-27
    Description: Lattice-based cryptography has received attention as a next-generation encryption technique, because it is believed to be secure against attacks by classical and quantum computers. Its essential security depends on the hardness of solving the shortest vector problem (SVP). In the cryptography, to determine security levels, it is becoming significantly more important to estimate the hardness of the SVP by high-performance computing. In this study, we develop the world’s first distributed and asynchronous parallel SVP solver, the MAssively Parallel solver for SVP (MAP-SVP). It can parallelize algorithms for solving the SVP by applying the Ubiquity Generator framework, which is a generic framework for branch-and-bound algorithms. The MAP-SVP is suitable for massive-scale parallelization, owing to its small memory footprint, low communication overhead, and rapid checkpoint and restart mechanisms. We demonstrate its performance and scalability of the MAP-SVP by using up to 100,032 cores to solve instances of the Darmstadt SVP Challenge.
    Language: English
    Type: conferenceobject , doc-type:conferenceObject
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 58 (1992), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Using microdialysis and HPLC, characteristics of the release of endogenous 3,4-dihydroxyphenylalanine (DOPA) from striatum in conscious rats were studied in comparison with those of 3,4-dihydroxyphenylethylamine (dopamine; DA). Purified l-aromatic amino acid decarboxylase (AADC) converted a putative peak of DOPA to DA. The retention time of DOPA differed from that of DA and major metabolites of DA and norepinephrine. The DOPA peak of dialysates comigrated with that of authentic DOPA when the pH of the HPLC buffer was modified. The ratio of the basal release of DOPA:DA was 1:2. 3-Hydroxybenzyl-hydrazine (NSD-1015; 100 mg/kg, i.p.), an AADC inhibitor, markedly increased the basal release of DOPA but produced no effect on DA. The basal release of DOPA was markedly decreased by α-methyl-p-tyrosine (200 mg/kg, i.p.), substantially tetrodotoxin (1 μM) sensitive, and Ca2+ (removal plus 12.5 mM Mg2+ addition) dependent. Fifty millimolar K+ released DOPA and this release was also Ca2+ dependent. These characteristics of the basal and evoked release of DOPA were similar to those of DA. The ratio of the evoked release of DOPA:DA was 1:3. These results indicate that DOPA is released under physiological conditions and by K+-induced depolarization in a manner similar to that for transmitter DA from striatum in freely moving rats.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2784-2786 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitonic photoluminescence (PL) peaks from hexagonal GaN epilayers were investigated making a connection with the analysis of the photoreflectance spectra. Free exciton emissions associated with transitions from the conduction (Γ7c) band to the A (Γ9v) and B (Γ7uv) valence bands are dominant above 100 K. Values of the full widths at half maximum of them were smaller than the thermal energy kBT up to room temperature, which suggests the dominance of excitons in the PL spectra. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4744-4746 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical transmittances of anodic alumina films which contain nematic liquid crystals in columnar pores were studied. Since liquid crystals are enclosed in narrow pores of ∼2000 A(ring) diameter, light scattering occurs not only by the refractive index mismatch between the liquid crystals and alumina but also by the prominent distribution of the refractive index inside the liquid crystals. The transmittance changes reversibly with an electric field and temperature.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-valve structures with a magnetic material buffer layer, CoNbZr/NiFe/Co90Fe10/Cu/Co90Fe10/Fe50Mn50, were prepared on a oxidized Si substrate. From x-ray diffraction analysis, it was shown that the CoNbZr/NiFe buffer layer enhances the fcc (111) orientation of the spin-valve structure on oxidized Si. After annealing, the giant magnetoresistance (GMR) ratio of Δρ/ρ=8% and the soft magnetic properties of Hc=0.1 Oe and Hk=2.8 Oe were obtained. The sensitivity of GMR, Δ(Δρ/ρ)/ΔH, of 1.4%/Oe is achieved. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact storage ring has been developed for industrial research such as x-ray lithography and material analysis. This machine is of a racetrack type with two superconducting bending magnets and only two normal conducting quadrupole magnets. The circumference is as short as 9.2 m. One quadrupole magnet per cell contributes to making the smaller machine. The injector is a synchrotron, and a full energy injection of 600 MeV is performed. The bending magnets excite a field of 3.5 T, and are operated in a persistent current mode. A decrease in a coil current is ΔI/I〈3×10−3/year. The helium consumption is as low as 2 l/h for two magnets. An iron shield of the magnet decreases a leakage flux to a terrestrial level at a point 3 m from the magnet. A beam current of 380 mA has been stored with no beam instability in spite of there being no correction of the chromaticities. Beam emittances were obtained from measured beam sizes and were in good agreement with calculated values. The coupling coefficient εy/εx is calculated as around 0.04. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2376-2378 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Significant advances in GaN-based materials and devices have prompted intense interest in the group III nitrides. In this letter, we report electroluminescence-detected magnetic resonance (ELDMR) and electrically detected magnetic resonance (EDMR) results on InGaN/AlGaN double heterostructures which have an intense blue emission. The dominant feature detected by either technique is a broad resonance (ΔB∼21 mT) at g≈2.00. Our ELDMR measurements show that this is associated with the blue emission and we ascribe this resonance signal to a deep Zn-related acceptor. A second resonance, resolved in EDMR, is tentatively identified as a deep donor trap. Based on our results we propose a model for the blue emission from these diodes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3709-3711 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a polarization-discriminating Mach-Zehnder (PDMZ) all-optical switch. The switching speed of this PDMZ all-optical switch is not limited by the slow relaxation time of highly efficient incoherent nonlinearities. We demonstrate a squarelike modulation characteristic, which is necessary in most switching applications, at a switching speed (on-off time) of 40 ps. We also demonstrate ultrafast switching at a detector limited speed of ∼8 ps. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5543-5549 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality gallium nitride (GaN) film was obtained using a GaN buffer layer on a sapphire substrate. Using low-temperature Hall measurements, we obtained a maximum mobility about 3000 cm2/V s, at around 70 K. This mobility value is the highest reported, to our knowledge, for GaN films. The infrared radiation transmission intensity oscillations, which were caused by interference effects, were observed by means of an infrared radiation thermometer during GaN growth. The growth process of GaN film with GaN buffer layers was almost the same as that of GaN film with AlN buffer layers except when the thickness of GaN buffer layers was small. When the thickness of GaN buffer layers was small, an additional new growth process, in which the surface of GaN film became rough during the growth, was observed. The GaN growth with GaN buffer layers had a tendency to improve the surface morphology even if it became poor due to excess Si doping or low buffer layer thickness.
    Type of Medium: Electronic Resource
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