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  • 1
    Electronic Resource
    Electronic Resource
    Passivation induced deep levels in GaInAs PIN planar photodiodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4436-4439 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage induced by the passivation process has been evaluated and compared by admittance and deep level transient spectroscopies in GaInAs planar photodiodes passivated by a silicon nitride film. The comparison is based on three deposition techniques: the chemical vapor deposition (CVD), the plasma-enhanced CVD (PECVD), and the ultraviolet activated CVD (UVCVD). Two deep levels, with properties and concentration which are found to be strongly dependent on the passivation techniques, are observed: The first, located at Ec−0.35 eV is detected in PECVD and UVCVD passivated diodes and attributed to the GaInAs surface degradation resulting from the deposition process. The second, located at Ec−0.19 eV appears only on CVD diodes and could be related to the high-temperature treatment specific to this technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350784
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  • 2
    Electronic Resource
    Electronic Resource
    Leakage mechanisms of titanium silicided n+/p junctions fabricated using rapid thermal processing (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1280-1282 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a physical analysis of the reverse leakage currents observed in titanium silicided n+/p junctions fabricated using rapid thermal processing. By studying the dependence of currents on temperature, bias voltage, and diode geometry, we have been able to identify the leakage mechanisms. A defect level at Ev+0.30 eV, detected in concentrations (approximately-greater-than)1014 cm−3, is shown to be responsible for a low leakage current component, through a generation-recombination mechanism. Silicide asperities protruding through the metallurgical junction are proposed to account for the tunneling nature of a second, high leakage, distribution of currents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104336
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  • 3
    Electronic Resource
    Electronic Resource
    Electric field depressed emission from a Au/GaAs near-interface state (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 540-542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous wave laser annealing was carried out on liquid phase epitaxy GaAs material. A new defect termed PL1 localized near the Au/GaAs interface was detected by deep level transient spectroscopy. This defect is related to the formation of an oxide layer at the GaAs surface during the treatment. Completely new physical behavior of this defect is observed. Deep level optical spectroscopy and deep level transient spectroscopy have shown that the emission of PL1 is depressed by the electric field. This result is discussed in view of other electric field effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100924
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  • 4
    Electronic Resource
    Electronic Resource
    Identification of the titanium-related levels in GaP (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1696-1698 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy, deep level optical spectroscopy, and optical absorption experiments were carried out in n- and p-type Ti-doped GaP crystals grown by the liquid encapsulated Czochralski technique. The single acceptor level of substitutional titanium Ti3+/Ti2+ was identified by deep level transient spectroscopy at an energy of 0.50±0.02 eV from the conduction band. The Ti2+ intracenter transitions were detected by deep level optical spectroscopy and optical absorption about 0.63 and 1.03 eV. The Ti4+/Ti3+ donor level was found at about 1±0.2 eV from the top of the valence band. The position of these two levels is found in complete agreement with the position of titanium-related levels in GaAs and in InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98547
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  • 5
    Electronic Resource
    Electronic Resource
    A deep level transient spectroscopy study of electron traps in n-type GaAs after pulsed electron beam irradiation (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2742-2745 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and deep level transient spectroscopy measurements on Schottky barriers were performed in order to characterize electrically active defects in n-type GaAs (Bridgman substrates or liquid-phase epitaxial layers) after pulsed electron beam annealing. Both surface damage and bulk defects were observed in the Bridgman substrates depending on the pulse energy density. No electron traps were detected in the liquid-phase epitaxial layers before and after annealing for an energy density of 0.4 J/cm2. The existence of an interfacial insulating layer at the metal-semiconductor interface, associated with As out-diffusion during the pulsed electron irradiation, was revealed by the abnormally high values of the Schottky barrier diffusion potential. Moreover, two new electron traps with activation energy of 0.35 and 0.43 eV, called EP1 and EP2, were introduced in the Bridgman substrates after pulsed electron beam annealing. The presence of these traps, related to the As evaporation, was tentatively attributed to the decrease of the EL2 electron trap signal after 0.4-J/cm2 annealing. It is proposed that these new defects states are due to the decomposition of the AsGa-Asi complex recently considered as the most probable defect configuration for the dominant EL2 electron trap usually detected in as-grown GaAs substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339401
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  • 6
    Electronic Resource
    Electronic Resource
    The donor level of vanadium in InP (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3126-3130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied p-type vanadium-diffused InP by deep-level transient spectroscopy. A level at 0.21 eV above the valence band is observed at a concentration comparable to that of vanadium. This level is interpreted as the V3+/V4+ donor state of vanadium in agreement with photoluminescence excitation experiments on n-type InP:V. Measurement of the photoneutralization cross section allows us to observe, for the first time, an excited state of a transition metal ion in resonance with the valence band. This observation confirms the charge state of the level that we have found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336890
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  • 7
    Electronic Resource
    Electronic Resource
    Alloy broadening in photoluminescence spectra of Ga0.47In0.53As (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 768-772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-temperature photoluminescence of undoped GaxIn1−xAs layers, lattice matched to InP, grown by liquid-phase epitaxy and molecular-beam epitaxy has been studied. In this work, we focus mainly on the origin of the line broadening of the two main emissions (excitonic and donor-acceptor pair transitions) observed. We find that, as it has been recently shown in GaxAl1−xAs, the dominant broadening mechanism is alloy broadening, due to random cation distribution. This model gives linewidths of the bound exciton and the donor-acceptor pair transitions based on compositional fluctuations within the crystal volumes which are characteristic of the two transitions. Calculated linewidths agree rather well with experimental results, thus demonstrating that alloy broadening leads also in GaxIn1−xAs to a quantitative understanding of the low-temperature photoluminescence spectra. Careful analysis of the donor-acceptor pair band yields acceptor activation energies of 15, 22, and 25 meV which are attributed to C, Zn, and Si, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337427
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  • 8
    Electronic Resource
    Electronic Resource
    Absolute photoionization cross sections of the acceptor state level of chromium in indium phosphide (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2038-2043 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied by deep-level transient spectroscopy and deep-level optical spectroscopy n-type chromium-doped InP. We definitively confirm that the Cr2+/Cr3+ acceptor state is positioned at EC −0.4 eV in InP. We have measured for the first time the absolute values of the photoionization cross sections of Cr2+ in InP by deep-level optical spectroscopy. The σ0n cross section exhibits both a resonant and a nonresonant character. The former corresponds to the internal transition 5T2→5E of Cr2+, while the latter is attributed to the photoexcitation from the Cr2+ to the conduction band. The threshold of this transition at EC −0.41 eV indicates a very small Franck–Condon shift. The scales of the absolute photoionization values (σ0n) and photoneutralization (σ0p) cross sections towards the conduction and valence bands are the same, which seems to indicate no selection rules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336387
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  • 9
    Electronic Resource
    Electronic Resource
    A study of deep levels by transient spectroscopy on p-type liquid-phase-epitaxial GaxIn1−xAsyP1−y grown on semi-insulating InP (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1536-1543 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-type layers of InP, Ga0.28In0.72As0.6P0.4 (λ=1.3 μm) and Ga0.47In0.53As (λ=1.65 μm) grown by liquid -phase epitaxy on semi-insulating InP:Fe substrates have been investigated by deep level transient spectroscopy. In InP, we have found near the surface a majority-carrier trap which is located at 0.22 eV above the top of the valence band. A very similar trap (capture cross section and energy) appears with about the same concentration in the quaternary layer but is not present in the ternary layer. Thus, we suggest that this trap could be related to the phosphorus sublattice (e.g., a complex, a vacancy, or a substitutional impurity), caused by a phosphorus depletion produced at the end of the epilayer growth. Other traps have been found in quaternary and ternary layers but are not identified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336460
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  • 10
    Electronic Resource
    Electronic Resource
    The acceptor level of vanadium in III–V compounds (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4207-4215 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The positions of the acceptor level of vanadium in GaAs, GaP, and InP are estimated. This level is found to be at about Ec−0.14 eV in GaAs and about Ec−0.8 eV in GaP. It is above the conduction band edge in InP. These positions in the three hosts are in agreement with the trends proposed by Ledebo and Ridley. The finding of a very high acceptor level of vanadium in GaAs does not allow to explain the semi-insulating behavior of GaAs:V. Other possible compensating centers are considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336287
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