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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3125-3131 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an analysis of Bragg–Brentano diffraction spectra from blanket thin (10–20 nm) films of polycrystalline Ir, sputter deposited on thermally oxidized Si wafers. We observed that postdeposition annealing sharpened the Ir diffraction peaks, produced enhanced texture, and resulted in the formation of well-defined thickness fringes that were symmetric around the 111 Ir reflection. Scanning electron microscopy confirmed that the fringes were caused by the increased coherence lengths of the annealed grains. Annealed samples subsequently subjected to reactive ion etching exhibited asymmetric fringe patterns, with lower intensity fringes on the high angle side of the 111 Ir peak. Reannealing these samples restored the symmetric fringes. Analysis of the fringe patterns using simple equations and modeling programs in the public domain yielded valuable structural information about the film and the changes caused by processing. These results were verified by x-ray reflectivity measurements and modeling. We conclude that thickness fringe analysis using standard x-ray systems and simple programs can provide cost-effective process diagnostics for high atomic number thin film structures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2516-2525 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a model which accounts for the dramatic evolution in the microstructure of electroplated copper thin films near room temperature. Microstructure evolution occurs during a transient period of hours following deposition, and includes an increase in grain size, changes in preferred crystallographic texture, and decreases in resistivity, hardness, and compressive stress. The model is based on grain boundary energy in the fine-grained as-deposited films providing the underlying energy density which drives abnormal grain growth. As the grain size increases from the as-deposited value of 0.05–0.1 μm up to several microns, the model predicts a decreasing grain boundary contribution to electron scattering which allows the resistivity to decrease by tens of a percent to near-bulk values, as is observed. Concurrently, as the volume of the dilute grain boundary regions decreases, the stress is shown to change in the tensile direction by tens of a mega pascal, consistent with the measured values. The small as-deposited grain size is shown to be consistent with grain boundary pinning by a fine dispersion of particles or other pinning sites. In addition, room temperature diffusion of the pinning species along copper grain boundaries is shown to be adequate to allow the onset of abnormal grain growth after an initial incubation time, with a transient time inversely proportional to film thickness. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1991-2000 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Tapered capillaries are frequently used as beam-concentrating optics in microbeam x-ray diffraction experiments. The beams exiting such devices are usually highly divergent and may possess nonuniform intensity distributions. In addition, their alignment poses some special challenges. In this article, the effects of these factors on the precision and accuracy of diffraction data are presented. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3165-3166 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4300-4302 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of an x-ray diffraction study of dc-magnetron sputtered tungsten thin films are reported. It is shown that the phase transformation from the β to α W can cause multilayered single-phase films where the layers have very different stress states even if the films are in the 500 nm thickness range. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2980-2981 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The proper elastic equations for an epitaxial bilayer system are presented, amending an earlier paper published by other authors in this journal. The stress profile normal to the surface and the radius of curvature are given as functions of the epitaxial mismatch.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1300-1304 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Microdiffractometers are used to obtain x-ray diffraction data from regions that are tens of microns or less in size. If a microdiffractometer's rotation circles do not share the same center, or if the feature of interest on a sample does not lie at the center of all rotations, the sample feature will, upon rotation of the diffractometer circles, precess through a finite volume known as the sphere of confusion (SoC). If the size of the beam used for diffraction analysis is smaller than the SoC diameter, the beam may actually move off the region of interest. In this article, we describe a new technique, based on x-ray fluorescence imaging and coordinate transforms, which can maintain the sample position to within ±6 μm over all rotations even when a commercial diffractometer is used as the base for the microdiffractometer system. In this scheme, a grid held in place on the specimen surface is mapped using fluorescent radiation at various sample tilts. The transformation matrices, which relate the grid coordinates to the sample stage coordinates at different sample tilts, can then be used to bring the sample stage into coincidence with its original position. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 22-24 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stress transfer behavior in multilayer thin film structures (nickel/polyimide/copper) was measured using x-ray stress analysis. Copper was deposited in various line lengths, and the stress/strain transferred from a loaded Ni substrate to the Cu thin film was measured as a function of line length. It was found that there is incomplete strain transfer from one layer to another, and that the shape of the stress transfer function is similar to that predicted by the shear lag model. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 726-728 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of strain-relaxed Si1−xGex/Si films that relaxed by different dislocation nucleation mechanisms has been investigated using x-ray microdiffraction with a diffracted beam footprint of 1 μm×5μm. Intensity variations in the x-ray microtopographs of samples having step-graded intermediate layers, which relaxed by dislocation multiplication, are due to the presence of local tilted regions which are larger in area than the diffracted x-ray beam. In contrast, microtopographs of uniform composition layers, which relaxed by surface roughening and subsequent random dislocation nucleation, show little intensity contrast as the local tilted regions in these samples are much smaller than the diffracted x-ray beam. The difference in microstructure arises from the different distributions of 60 ° misfit dislocations in these two types of samples. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2352-2354 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of an x-ray microdiffraction study of the deformation field surrounding Ni thin film pads on a 111-type Si wafer are reported. The strain fields were mapped by measuring the Si 333 reflection intensities over an area containing several pads. The positions of the pads were simultaneously determined by recording the Ni Kα fluorescence as a function of position. The results indicate that, contrary to the results from analytical solutions and finite-element models, the position of maximum strain contrast is slightly outside the pad edge. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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