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  • 1
    Electronic Resource
    Electronic Resource
    An analytical model for the density of states
    Amsterdam : Elsevier
    Physics Letters A 48 (1974), S. 51-52 
    Details
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9601(74)90223-0
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  • 2
    Electronic Resource
    Electronic Resource
    Low frequency (1/f) noise in YBa2Cu3O7−δ grain boundary junction dc superconducting quantum interference devices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1895-1898 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied low frequency (1/f) noise of YBa2Cu3O7−δ dc superconducting quantum interference devices (SQUIDs) on SrTiO3 bicrystal substrates. 1/f flux noise, either measured at different temperatures for optimized bias current or measured at 77 K for different bias currents, is almost constant. These facts imply that 1/f noise mainly comes from fluctuations of the critical current of the Josephson junction that form the SQUID. Also, we explain the critical current fluctuations in the junction by an equilibrium temperature fluctuation model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357714
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  • 3
    Electronic Resource
    Electronic Resource
    Carrier doping into MgIn2O4 epitaxial thin films by proton implantation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2112-2117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of MgIn2O4 were grown on MgO(100) single-crystal substrates through the pulsed laser deposition technique. X-ray diffraction measurements revealed film orientations MgIn2O4(h00)//MgO(h00) and MgIn2O4(0k0)//MgO(0k0), respectively. Proton implantation was applied to generate carrier electrons in the films. The electrical conductivity of the as-deposited films is below ∼10−7 S cm−1 at room temperature. The maximum conductivity of ∼70 S cm−1 was obtained by the implantation. Hall voltage measurements revealed that H+ implantation causes carrier generation in proportion to H+ fluence without reduction of electron mobility. Following the post-annealing process resulted in further enhancement of the conductivity in each H+-implanted film, as conductivity and generation efficiency were found to increase up to ∼2×102 S cm−1 and ∼95% at the maximum, respectively. This differs from the behavior of polycrystalline films in which conductivity decreased by post-annealing due to a decrease in the Hall mobility of electrons. Thus it is concluded that crystal quality is crucial for heavy carrier doping by ion implantation, especially when utilizing post-annealing treatments to enhance the carrier generation efficiency without reduction of the Hall mobility. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418425
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  • 4
    Electronic Resource
    Electronic Resource
    Multichannel motional Stark effect diagnostic discriminating radial electric field in the JFT-2M tokamak (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 2931-2935 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A multichannel motional Stark effect polarimeter system, which is capable of simultaneous measurement of a radial electric field, has recently been developed on the JFT-2M. The diagnostic can measure the polarization angle at 18 radial locations, which cover a region between just inside from the magnetic axis and the outboard edge of the plasma. By viewing two neutral beam lines (one is co-parallel to the plasma current and the other is counter parallel) simultaneously and near tangentially to the toroidal magnetic field from only one spectroscopic instruments, it provides the best sensitivity in radial electric field measurements with good spatial resolution. The magnetic field pitch angle is also measured with the smallest uncertainty. Preliminary data for L-mode plasma has been obtained. It is found that the statistical uncertainty of the magnetic field pitch angle and radial electric field is about 0.1° and 4 kV/m, respectively, with a time resolution of 10 ms. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380684
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  • 5
    Electronic Resource
    Electronic Resource
    Neutron diagnostic for MTX : Eighth topical conference on high−temperature plasma diagnostics (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3181-3183 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A neutron diagnostic system has been installed on the MTX tokamak. The diagnostic will be used to measure both the peak ion temperature and the ion response to intense free-electron laser microwave pulses (140–250 GHz, 1–8 GW, 20–50 ns). High-speed measurements are important for studying the intense microwave absorption process. A plastic scintillator with a polymer-clad silica bundle is used for fast time response detection. Five-channel proportional counters and fission counters are used to monitor the neutron yield for a source strength from 108 to 1013 n/s. This sytem has been calibrated with a 252Cf neutron source in the vacuum vessel and is being tested using the MTX ohmic plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141974
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  • 6
    Electronic Resource
    Electronic Resource
    MTX diagnostic and timing system for free-electron laser heating experiments : Eighth topical conference on high−temperature plasma diagnostics (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3274-3276 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In the microwave tokamak experiment (MTX) program, we are concentrating on experiments using intense, free-electron laser (FEL) generated microwave pulses. In initial FEL experiments, several diagnostic instruments were operated during injection of microwave pulses with peak powers to 0.2 GW at durations of 10 ns. Fixed and spatially scanning microwave detectors and receivers and a 48-element calorimeter on the inside wall of MTX diagnosed the GW-level FEL microwave pulses. With these diagnostics, linear-wave absorption and efficiencies of transmission through the quasi-optical transport system were studied. In addition, several radially resolved measurements of plasma density, temperature, and emission were made during FEL injection and were used in the analysis of microwave absorption data. A timing system, slaved to the FEL pulse arrival time, is capable of accuracy to a few nanoseconds in order to allow measurement of heating effects on the time scale of a single FEL pulse.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141948
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  • 7
    Electronic Resource
    Electronic Resource
    Surface and bulk passivation of GaAs solar cell on Si substrate by H2+PH3 plasma (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 730-732 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A promising passivation method for GaAs solar cell grown on Si substrate (GaAs/Si solar cell) by phosphine-added hydrogen (PH3/H2) plasma exposure has been envisaged. The defect-hydrogenation and the surface-phosphidization effects of GaAs/Si solar cell are realized simultaneously by this single passivation process. Consequently, surface recombination states are reduced and the minority carrier lifetime is increased, resulting in a significant reduction in saturation current density (J0) of the GaAs/Si p–n junction. High open-circuit voltage (0.93 V) and fill factor (80.9%) are obtained for the PH3 plasma exposed GaAs/Si solar cells. As a result, the conversion efficiency is increased from 15.9% to 18.6%. This approach provides a simple and effective method to improve the photovoltaic properties of GaAs/Si solar cell. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125876
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  • 8
    Electronic Resource
    Electronic Resource
    Relation between the cooling time in the film-growth process of YBa2Cu3O7−δ and the electrical properties of bicrystal Josephson junctions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2183-2185 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the film deposition condition for bicrystal Josephson junctions to obtain reliable device parameters Ic and Rn at 77 K. In addition, it was found that the cooling time in the film-growth process of YBa2Cu3O7−δ was a very important factor to determine the electrical properties of bicrystal Josephson junctions with the misorientation angle θ=36.8°. In the three regions of the cooling time as 5–6, 10–20, and more than 30 min, the junctions' Tc were above 87, 50–86, and above 86 K, and the average values of the IcRn products at 77 K were 0.12 mV, 50 μV, and 80 μV, respectively. The junction parameters and the shapes of the I–V curves were changed due to the change of the cooling time. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119035
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  • 9
    Electronic Resource
    Electronic Resource
    Passivation of dislocations in GaAs grown on Si substrates by phosphine (PH3) plasma exposure (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3463-3465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phosphidization effect on dislocations in GaAs grown on Si substrate (GaAs/Si) has been investigated. It was found that the high density of dislocations in GaAs/Si heteroepitaxial layers largely enhanced the diffusion of phosphorus (P) atoms during the phosphine (PH3) plasma exposure. The incorporated P atoms strongly passivated the electrical states of residual dislocations in GaAs/Si solar cell. As a result, the PH3 plasma exposure largely increased the open circuit voltage (Voc) and the efficiency of GaAs/Si solar cell. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376433
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  • 10
    Electronic Resource
    Electronic Resource
    Pressure–pain threshold determination in the oral mucosa: validity and reliability (2002)
    Oxford UK : Blackwell Science Ltd
    Journal of oral rehabilitation 29 (2002), S. 0 
    Details
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Fundamental knowledge of pain in the oral mucosa is lacking. We determined the validity and reliability of the pressure–pain threshold (PPT) measurement in the oral mucosa using a newly developed hand-held pressure algometer. Ten dentulous subjects were recruited, and the PPT was measured at the bilateral buccal (on the attached gingiva apical to the midline of the upper first premolars, 3 mm from the mucogingival junction) and the palatal sites (mid-point between the bilateral upper first molars). The PPT linearly increased with an increase in load-rate (P 〈 0·0001). The PPT yielded a high intra-individual stability both for the same-day consecutive trials and weekly sessions. The palatal site revealed a 4- to 4·65-fold greater PPT than the buccal sites (Bonferroni, P 〈 0·0001), whereas no difference was found between the bilateral buccal sites (P=0·663). Despite a great interindividual variation in the PPT, significant intra-individual correlations were found among the measurement sites. This suggested differences in individual sensitivity to pain in the oral mucosa, which may determine overall pain sensation specific to an individual. A pressure algometer described herein reliably assessed the PPT in the oral mucosa and sensitively discriminated PPT differences at different sites and at different load-rates, suggest-ing the reliability and validity of PPT measure-ments in the oral mucosa for clinical and research investigations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2842.2002.00874.x
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