ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report a cross-correlated investigation, performed by means of Raman scattering and infrared spectroscopy, of coupled LO phonon-plasmon modes in bulk GaN. Using different samples with different (high) residual concentrations of free carriers, we find that the high-energy Raman mode follows closely the plasma frequency resolved from the infrared data. On the opposite, the low-frequency modes appears down shifted, with respect to the standard TO phonon frequency, by about 11 cm−1. Both findings agree satisfactorily with predictions of the linear response theory for undamped phonon-plasmon modes and establish Raman scattering as a powerful and nondestructive tool to investigate the residual doping level of GaN up to about 1020 cm−3 . © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114446
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