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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of haze-forming precipitates in silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4444-4450 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defects leading to haze formation after diffusion of the transition metals cobalt, nickel, copper, and palladium have been studied by means of transmission electron microscopy and preferential etching. In all cases crystalline metal silicide particles have been observed. Both cobalt and nickel form disilicide particles of different morphologies in the surface regions of silicon wafers, whereas copper and palladium form metal-rich silicide particles causing a supersaturation of Si self-interstitials or undersaturation of vacancies and leading to the formation of extrinsic dislocation loops.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340164
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  • 2
    Electronic Resource
    Electronic Resource
    Recombination properties of structurally well defined NiSi2 precipitates in silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 911-913 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report first results on the recombination properties of structurally well defined NiSi2 precipitates in n-type silicon. Under the conditions applied, precipitates form without the occurrence of punched out dislocations or any other secondary defects. We find that the minority-carrier diffusion length (LD) measured by electron beam induced current (EBIC) is related to the precipitate density NV and LD (approximately-equal-to) 0.7 × NV−1/3. EBIC investigations of individual precipitates reveal contrasts up to 40% demonstrating NiSi2 particles to be efficient recombination centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104474
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    The temperature dependence of the ion beam induced interfacial amorphization in silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3425-3427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the ion beam induced interfacial amorphization process (IBIIA) in silicon has been investigated at temperatures above 80 K using Rutherford backscattering spectrometry/channeling (RBS/C) and cross-sectional transmission electron microscopy (XTEM). Three regimes are observed. Above temperatures of about 320 K there is a strong temperature dependence of the IBIIA rate (thermal regime). At lower temperatures the rate moves towards a saturation value (transition regime). Below ∼150 K, IBIIA is nearly temperature independent (ballistic regime). This low-temperature regime can be explained by an athermal transport of point defects like in ballistic mixing processes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115781
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  • 4
    Electronic Resource
    Electronic Resource
    Nonconservative Ostwald ripening of dislocation loops in silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2956-2958 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects of the proximity of the surface on the ripening behavior of dislocation loops in preamorphized silicon. Starting from well-defined initial conditions, we have varied the location depth of the loops by successive chemical removal of surface layers and measured changes of the size–distribution function during subsequent annealing by means of transmission electron microscopy. Our results show that the amount of Si atoms bound in the loops is not conserved during annealing and that the loop location depth has a prominent effect on the ripening kinetics. Both these observations prove the nonconservative nature of Ostwald ripening of dislocation loops near wafer surfaces. In addition, we observed different ripening kinetics for annealing in vacuum and in Ar which show that different boundary conditions at the surface are established during annealing in these two ambients. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122642
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  • 5
    Electronic Resource
    Electronic Resource
    Study of laser-deposited metallic thin films by a combination of high-resolution ex situ and time-resolved in situ experiments (1999)
    Springer
    Applied physics 69 (1999), S. S455 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.55.-a
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Laser-deposited metallic alloys and multilayers were studied in detail by a combination of high-resolution ex situ and time-resolved in situ experiments. The purpose of these experiments is to better understand the special properties of laser-deposited metallic films in comparison with conventionally prepared thin films. During deposition, thickness, resistance, and electron diffraction (THEED) experiments show that the film surface is resputtered, local mixing at the interfaces of multilayers on a nanometre scale occurs, and metastable phases up to large film thicknesses are formed. After deposition, a compressive stress of 1–2 GPa was measured using four-circle diffractometry, and growth defects were observed on an atomic scale by electron microscopy (HRTEM) and field ion microscopy (FIM). The obtained structural details of the metallic films can be explained by an implantation model for the laser deposition process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390051437
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  • 6
    Electronic Resource
    Electronic Resource
    Probing grain boundaries in As-doped polycrystalline silicon (1999)
    Springer
    Hyperfine interactions 120-121 (1999), S. 383-388 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Using 111In–111Cd perturbed angular correlations, we investigated the behaviour of In in heavily As-doped polycrystalline silicon. The nuclear In tracers were either introduced by means of grain boundary (GB) diffusion or ion implantation. We find, that the in-diffused In tracers exclusively probe GBs which give rise to a broad distribution of static quadrupole frequencies. The implanted tracers exclusively probe Si bulk material, where they encounter As-dopants during thermal annealing and form the well-known In–As complexes #1 and #2, and the previously unknown complex #4 (eQVzz=117 MHz, η=0) which involves three As atoms on nearest neighbor sites with respect to the probe. The implications of the present experiment on acceptor doping and GB probing are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1017076801985
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