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  • 1
    Electronic Resource
    Electronic Resource
    Evidence for the formation of ordered layers on SeS2 treated GaAs(110) using atomic force microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6274-6278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The wet chemical treatment using SeS2 is an inexpensive and simple method of depositing selenium on GaAs surfaces. This treatment improves the electronic properties of the surface as seen from the increase in photoluminescence intensity. We present our results on surface structural investigations of GaAs(110) surface passivated by SeS2 treatment using atomic force microscopy. Our results show that SeS2 treatment can passivate the GaAs(110) surface forming ordered overlayers on it. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363703
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  • 2
    Electronic Resource
    Electronic Resource
    Resonant decay instability of a Langmuir wave in a plasma slab (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 586-589 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The parametric decay of a Langmuir wave into a Langmuir wave and an ion acoustic wave is studied in a plasma slab. The coupled mode equations are solved using the perturbation technique which yields a dispersion relation for the parametric instability. The growth rate of the instability is found to increase with the width of the plasma slab and approaches the value for an infinite uniform plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341946
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  • 3
    Electronic Resource
    Electronic Resource
    Self-focusing of Langmuir waves in a plasma including the effect of Landau damping (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4685-4687 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Langmuir waves have a tendency to self-focus around the intensity maxima at moderate power densities. A paraxial ray theory of self-focusing, through ponderomotive nonlinearity, reveals that the self-focusing length Rn(approximately-equal-to)avth/vosc where a is the radial width of the Langmuir wave, and vth and vosc are the electron thermal and oscillatory velocities. The damping tends to inhibit the self-focusing effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343825
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  • 4
    Electronic Resource
    Electronic Resource
    Filamentation instability in an inhomogeneous laser-produced plasma (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4725-4727 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A laser beam propagating along the density gradient in a laser-produced plasma is unstable to a transverse density perturbation. When ambient density scale length is comparable to growth length, spatial growth is faster than the exponential. For a linear density profile the amplitude of the filament varies with z as an Airy's function, whereas for an exponential profile it goes as a Bessel function of imaginary order and argument. In both cases the growth rate increases with the transverse wave vector of the perturbation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339024
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  • 5
    Electronic Resource
    Electronic Resource
    Pulsed laser ablation of aluminum in the presence of nitrogen: Formation of aluminum nitride (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7334-7338 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the pulsed laser ablation of aluminum in the presence of nitrogen gas using a 1.06 μm wavelength of Nd:YAG laser. A prominent band of aluminum nitride corresponding to the (0-0) band of the system belonging to a 3π–3π transition was observed at 507.8 nm. An attempt is made to identify the ionized states of aluminum and nitrogen contributing to formation of the AlN band. AlN films were deposited at room temperature and characterized using x-ray diffraction. A direct correlation between the laser ablated aluminum plasma and the deposited AlN film is reported. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1329353
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  • 6
    Electronic Resource
    Electronic Resource
    Manganese doped zinc sulphide nanoparticles by aqueous method (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2506-2508 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc sulphide nanoparticles in the size range ∼10–40 A(ring) diameter have been synthesized using the aqueous chemical method. Scanning tunneling microscopy showed that particles are indeed nanosize particles. The size dependent band gap could be varied from a bulk value of 3.68 to 4.5 eV. X-ray diffraction indicated that nanoparticles are crystalline except for those with band gap ∼4.5±0.1 eV. Nanoparticles with particle size ∼21×2 A(ring) diameter or energy gap 4.1×0.1 eV were doped with manganese. The photoluminescence peak at ∼600 nm corresponding to yellow light emission was observed. Atomic absorption studies show that maximum luminescence intensity is achievable with 0.12 at. wt % of Mn doping. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114440
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  • 7
    Electronic Resource
    Electronic Resource
    A study of laser-ion-deposited carbon films on tungsten by x-ray diffraction, field ion microscopy, and electron spectroscopy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1052-1054 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin carbon films have been deposited on polycrystalline tungsten foil as well as field ion microscope (FIM) tips by laser-ion deposition in a high-vacuum environment with an ion extraction voltage of −2 kV. Structural characterization of these films has been carried out by using low-angle x-ray diffraction (XRD) and FIM. The low-angle XRD reveals the formation of an interfacial α-W2C phase. The FIM image indicates the formation of the α-W2C phase on the tungsten tip. X-ray photoelectron spectroscopy has been utilized to reveal that the bonding character in the film is sp3. Further, x-ray-excited Auger electron spectroscopy has also supported the diamondlike nature of the films. The results are discussed, and a sequence of layers deposited on tungsten is suggested in view of the structural match.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350397
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  • 8
    Electronic Resource
    Electronic Resource
    Defects and interfaces in epitaxial ZnO/α-Al2O3 and AlN/ZnO/α-Al2O3 heterostructures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2597-2601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the nature of epitaxy, defects (dislocations, stacking faults, and inversion domains), and heterointerfaces in zinc oxide films grown on (0001) sapphire and explored the possibility of using it as a buffer layer for growing group III nitrides. High quality epitaxial ZnO films were grown on sapphire using pulsed laser deposition in the temperature range 750–800 °C. The epitaxial relationship of the film with respect to (0001) sapphire was found to be (0001)ZnO(parallel)(0001)sap, with in-plane orientation relationship of [011¯0]ZnO(parallel)[1¯21¯0]sap. This in-plane orientation relationship corresponds to a 30° rotation of ZnO basal planes with respect to the sapphire substrate, which is similar to the epitaxial growth characteristics of AlN and GaN on sapphire. The threading dislocations in ZnO were found to have mostly 1/3〈112¯0〉 Burgers vectors. The planar defects (mostly I1 stacking faults) were found to lie in the basal plane with density of about 105 cm−1. We have grown epitaxial AlN films at temperatures around 770 °C using ZnO/sapphire heterostructure as a substrate and observed the formation of a thin reacted layer at the AlN/ZnO interface. The implications of low defect content in ZnO films compared to III–V nitrides and the role of ZnO films as a buffer layer for III–V nitrides are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368440
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  • 9
    Electronic Resource
    Electronic Resource
    Low temperature synthesis and electrical properties of epitaxial Sr0.8Bi2.2Ta2O9 thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3514-3516 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality epitaxial thin films of Sr0.8Bi2.2Ta2O9 (SBT) were grown on LaNiO3 (LNO) bottom electrodes. The SBT/LNO heterostructure was fabricated on (001) oriented LaAlO3 substrates by pulsed laser ablation. X-ray diffraction and high resolution transmission electron microscopy revealed epitaxial growth of SBT and LNO layers along the (001) direction and sharp interfaces between the epilayers. The SBT films exhibited a dielectric constant of ∼270 and the loss tangent varied from 0.02 to 0.04. The dielectric constant measured as a function of bias field revealed that the films were not ferroelectric in nature. The room temperature frequency response of the dielectric constant was observed to obey Curie–von Schweidler power law with an exponent of 0.02 in the range of 10 kHz–1 MHz. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1374226
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  • 10
    Electronic Resource
    Electronic Resource
    Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1222-1224 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated Ge nanostructures buried in a matrix of AlN grown on Si(111) by pulsed laser deposition at the substrate temperature of 500 °C. The characterization of these structures was performed using high-resolution transmission electron microscopy (HRTEM), photoluminescence, and Raman spectroscopy. The HRTEM results show that the Ge islands are single crystal with a pyramidal shape. The average size of Ge islands was determined to be ∼15 nm, which could be varied by controlling laser deposition and substrate parameters. The Raman spectrum showed a peak of the Ge–Ge vibrational mode downward shifted up to 295 cm−1 which is caused by quantum confinement of phonons in the Ge dots. The photoluminescence of the Ge dots (size ∼15 nm) was blueshifted by ∼0.266 eV from the bulk Ge value of 0.73 eV at 77 K, resulting in a distinct peak at ∼1.0 eV. The transmission measurements carried out on different samples having Ge dot sizes of 7, 8, and 13 nm deposited on sapphire substrate showed the above band edge transitions of Ge, which were also blueshifted in accordance with the quantum confinement effect. The importance of pulsed laser deposition in fabricating novel nanostructures is emphasized. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124648
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