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  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Optical investigation of quaternary GalnAsSb/AlGaAsSb strained multiple quantum wells'' [Appl. Phys. Lett. 67, 3432 (1995)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2591-2591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116792
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of InGaAs/InAlAs strained double quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5348-5351 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements have been performed on a In0.82Ga0.18As/In0.52Al0.48As strained double quantum wells with narrow well widths of 38 and 48 A(ring). The band offset ratio Qc in this narrow quantum well structures was found to be 0.70±0.01. Based on a steady-state photoluminescence model, the temperature and laser excitation dependences of the luminescence intensity allow us to conclude that the thermal quenching of luminescence is controlled by the quantum transport of the photogenerated carriers for temperature below 125 K, while the dominant luminescence quenching mechanism above 150 K is a thermally activated detrapping of carriers from the wells into barriers, followed by nonradiative recombination in the barriers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363474
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of strained CdTe/Cd0.633Mn0.367Te single quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5941-5945 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the photoluminescence studies of the strained CdTe/CdMnTe single quantum wells (SQWs) with large manganese of 0.367. The conduction band-offset ratio Qc of this structure is found to be 0.92±0.01. The band filling effect in this SQW is discussed in detail. Our experiments show that the excitonic transition dominates the whole measured temperature (20–200 K) in the well. The broadening of linewidth with temperature can be well explained by exciton-longitudinal-optical (LO) phonon coupling model and a quantitative approach is presented to explain the experimental fact that the strength of the exciton-LO phonon coupling is quite stronger in SQWs than that of multiple quantum wells. We demonstrate the main mechanism of the decrease in radiative QW recombination efficiency is due to the thermal excitation of excitons out of CdTe well, followed by nonradiative recombination in the CdMnTe barriers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363589
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  • 4
    Electronic Resource
    Electronic Resource
    GaAs multilayer p+-i homojunction far-infrared detectors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3316-3319 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A molecular beam epitaxy grown wavelength tunable GaAs p+-i homojunction interfacial work-function internal photoemission far-infrared detector is developed. The multilayer (p+-i-p+-i-...) detector structures consist of 2, 5, and 10 emitter layers. Experimental results are explained in terms of the number of emitter layers and the doping concentrations of the emitter layer. A detector with 10 multilayers and an emitter layer doping concentration (Ne) of 3×1018 cm−3 shows a current responsivity of 2 A/W, an effective quantum efficiency of 9.2% (at 26.3 μm) with a cutoff wavelength of 85 μ and the noise equivalent power of 2.18×10−12 W/Hz at 4.2 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364356
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  • 5
    Electronic Resource
    Electronic Resource
    Optical and photoelectrical properties of β-FeSi2 thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4793-4795 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Absorption, photocurrent, and infrared reflectivity spectra of the polycrystalline β-FeSi2 thin films in relation to the Si substrate temperature are presented. The photocurrent spectra involving both the fundamental interband, extrinsic defect transitions of β-FeSi2 and the intrinsic transitions of Si substrates are observed. Both the absorption and photocurrent measurements show the direct gap nature. A simple recombination model is proposed to account for the photocurrent results. We show that better quality β-FeSi2 films can be achieved at higher substrate temperature. The simplicity, sensitivity, and reliability of the photocurrent measurements for studying β-FeSi2 are well demonstrated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359761
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum: Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells [J. Appl. Phys. 78, 5696 (1995)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4474-4474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362717
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5696-5700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the dependence on the excitation power and temperature of the photoluminescence emission from a quaternary Ga0.75In0.25As0.04Sb0.96/Al0.22Ga0.78As 02Sb0.98 strained multiple- quantum-well structure grown by molecular-beam epitaxy. Sharp exciton resonances are observed up to room temperature and have been attributed to localized excitons for temperatures ≤80–100 K and to free excitons at higher temperatures up to room temperature by a comparative study with temperature-dependent absorption spectroscopy. We conclude that the dominant luminescence quenching mechanism in this quaternary system is mainly due to the trapped excitons thermalizing from the localized regions below 100 K, and the thermal carrier activation from the first electron and heavy-hole subbands to the second electron and heavy-hole subbands at higher temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359628
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1178-1182 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence and absorption spectra of strained InGaAs/GaAs single quantum well (SQW) and multiple quantum well (MQW) structures as a function of well width have been investigated in detail. It has been demonstrated that the strength of the exciton-LO phonon coupling is quite stronger in InGaAs/GaAs SQW structures than that of InGaAs/GaAs MQW structures by aid of the temperature-dependent linewidth analysis. The critical temperature for the excitonic polariton-mechanical exciton transition in InGaAs/GaAs quantum well structures is found to be ∼35 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360354
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature-dependent exciton behavior in quaternary GaInAsSb/AlGaAsSb strained single quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2139-2141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the temperature-dependent exciton behavior in a quaternary Ga0.67In0.33As0.01Sb0.99/Al0.25Ga0.75As 0.2Sb0.98 strained single-quantum-well (SQW) structure by photoluminescence spectroscopy. Strong exciton resonances are observed and have been attributed to localized excitons below 80 K and to free excitons at high temperatures. Nevertheless, we show that the experimental results of stronger exciton–phonon coupling in the quaternary SQW structure would lead to partial ionization of free excitons at temperatures above 125 K, in good agreement with the line-shape analysis of the luminescence spectra which clearly shows the presence of band-to-band recombination. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361072
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  • 10
    Electronic Resource
    Electronic Resource
    Radiative recombination characteristics in GaAs multilayer n+−i interfaces (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5444-5446 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this communication, we have carried out a detailed investigation of radiative recombination in n-GaAs homojunction far-infrared detector structures with multilayer emitter (n+)-intrinsic (i) interfaces by temperature-dependent steady-state photoluminescence measurements. The observation of the emitter-layer luminescence structures has been identified from their luminescence characteristics, in combination with high density theoretical calculation. A photogenerated carrier transferring model has been proposed, which can well explain the dependencies of the luminescence intensities on the laser excitation intensity and temperature. Furthermore, the obtained radiative recombination behavior helps us to offer a proposal to improve the operating temperature of the detector. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405137
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