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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence investigation of the 1.356 eV band and stoichiometry in undoped GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 736-741 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of the 1.356 eV emission band measured by photoluminescence (PL) is investigated by correlating the Hall measurement data for the same materials. The crystals grown by the horizontal-Bridgman technique were As or Ga rich by controlling As-zone temperatures. Type conversion from n to p type with the thermal activation energy ΔE=0.133 eV and ΔE=0.05 eV were achieved by heat treatment of the As-rich crystals. The Ev +0.133 eV level and the 1.356 eV band may not be attributed to the same defect because the Ev +0.133 eV level is electrically active with a nonradiative center and the 1.356 eV band is radiative with an electrically inactive (neutral) center. Therefore, both Ev +0.133 eV level and the 1.356 eV band were not attributed to copper impurity because copper is electrically and optically an active center in GaAs. The 1.356 eV band measured by PL may be due to a gallium-vacancy related complex, but differs from VGa -donor complex.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343087
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    On the eigenproblems of PT-symmetric oscillators (2001)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 42 (2001), S. 2513-2530 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: We consider the non-Hermitian Hamiltonian H=−d2/dx2+P(x2)−(ix)2n+1 on the real line, where P(x) is a polynomial of degree at most n≥1 with all non-negative real coefficients (possibly P≡0). It is proved that the eigenvalues λ must be in the sector |arg λ|≤π/(2n+3). Also for the cubic case H=−d2/dx2−(ix)3, we establish a zero-free region of the eigenfunction u and its derivative u′ and we find some other interesting properties of eigenfunctions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1366328
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  • 3
    Electronic Resource
    Electronic Resource
    Fabrication and low threshold current density CW operation of GaInAsP/InP multiple-reflector microcavity laser (1996)
    Springer
    Optical and quantum electronics 28 (1996), S. 487-493 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We report CW operation of a GaInAsP/InP multiple-reflector microcavity (MRMC) laser operated at fairly low threshold current density. The threshold current density with broad contact (stripe widthW=240 μm, cavity lengthL=60 μm) under pulsed operation was 180 A cm−2 (l th=20 mA), and was 230 A cm−2 under CW operation at room temperature operating at 1.52 μm wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00943616
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    Paper (German National Licenses)
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