ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The regrowth of an oxygen-implanted YBa2Cu3O7−δ thin film was studied by Rutherford backscattering, ion channeling, and x-ray diffraction studies. The atomic composition of the thin film was preserved even after a 1 h anneal at 990 °C, reflecting the high chemical stability of the material obtained by the pulsed laser deposition technique. Two distinct activation energies were determined during the regrowth process: 0.42±0.04 eV at lower temperatures, corresponding to epitaxial growth from the interface, and 0.18±0.03 eV at higher temperatures, presumably associated with homogeneous nucleation and reorientation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104214
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