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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 540-544 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization of an amorphous TiSi2 evaporated film has been studied on both poly-Si and SiO2 substrates. A metastable form of TiSi2 (base-centered orthorhombic; a=3.62 A, b=13.76 A, and c=3.605 A) [P. G. Cotter, J. H. Kohn, and R. A. Potter, J. Am. Ceram. Soc. 39, 11 (1956)] is formed first at a temperature of approximately 350 °C on both substrates. This phase consumes the entire amorphous layer before undergoing a polymorphic transformation to face-centered orthorhombic TiSi2 (a=8.24 A, b=4.78 A, and c=8.54 A) [F. Laves and H. J. Wallbaum, Z. Kristallogr. 101, 78 (1979)] at 600 and 800 °C on poly-Si and SiO2, respectively. These transformations were investigated using in situ resistivity, x-ray diffraction, and transmission electron microscopy. The room-temperature resistivities observed were 96 and 20 μΩ cm for the base-centered and face-centered TiSi2, respectively. The enhanced polymorphic transformation on poly-Si over SiO2 is explained by a lowering of surface energy barrier to nucleation.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 705-710 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transition and rare-earth metals have been found to interact with single-crystal Si in a way that allows a division into three distinct classes: near noble, refractory, and rare earth. Recently, attention has turned to the reaction of their binary alloys with Si. In this paper we will try to demonstrate that by regarding the alloy-Si reaction as a phase transformation of alloys under the influence of a reactive substrate, we can undertake a systematic approach for the study of this kind of phase transformations involving ternary elements. In essence we show that the kinetic path taken by the alloy-Si interaction can be understood and anticipated from the reaction characteristics of the proper metal/Si bilayers and the reaction in the alloy itself. Results will be shown for Er-Pt, and Gd-Ti alloys on Si which confirm this systematic approach, which is also supported by previously published data.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4853-4856 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of cobalt silicide grown on (001) Si by molecular beam epitaxy have been characterized by transmission electron microscopy. Apart from (001) oriented CoSi2 grains, regions of 〈221〉 type orientations were also found. The 〈221〉 oriented domains were found to be associated with pronounced facetted depressions on the (001) Si surface. Empirical observations suggest that the formation of 〈221〉 CoSi2 domains and the formation of other types of silicide stoichiometries may be related. It is demonstrated that these microstructural instabilities may be suppressed by the codeposition of cobalt and silicon rather than simply by depositing cobalt and reacting with the Si substrate to produce (001) CoSi2.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1886-1892 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interactions of thin films of Al and Pd-W alloys (Pd80W20 and Pd20W80) deposited on Si and on SiO2 have been studied using Auger-electron spectroscopy, Rutherford backscattering spectrometry, x-ray diffraction, and forward current-voltage measurements of Schottky-barrier height. For the bilayer films deposited on the inert substrate of SiO2, Pd reacts with Al, forming Al-rich Al-Pd intermetallic compounds at 400 °C. Furthermore, in the Pd-rich alloys (Pd80W20) Al permeates through the whole alloy film readily at 500 °C, while in the W-rich Pd20W80 the integrity of the alloy film is preserved even following annealing at 600 °C. For the bilayer films deposited on single-crystal Si, the results of annealing show extraction of Pd to both sides of the alloy, forming Pd2Si at the Si side and Al-Pd intermetallic compounds at the Al side. In the case of the Pd-rich alloy (Al/Pd80W20/Si) contact deterioration due to Al penetration to the substrate interface is observed at 500 °C and possibly at 400 °C. In the case of the W-rich alloy (Al/Pd20W80/Si) the stability of the contact is preserved even following annealing at 550 °C for 30 min; the structure after the annealing is Al-Pd/Pd-W/Pd2Si/Si. The W-rich alloy is very promising for contact applications in Si devices due to the fact that both a shallow silicide contact and a built-in diffusion barrier are simultaneously obtained.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2811-2813 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of growth conditions have been obtained that consistently overcome the formation of epitaxially misoriented grains in CoSi2/Si(001). One is by co-deposition of Co and Si at Co-rich ratios at a substrate temperature of ∼500 °C. This method yields films of low resistivity (16 μΩ cm) and low ion channeling minimum yield (χmin≈2%), but the misfit dislocation densities are of the order of 105 cm−1. The second way uses a template method of growth after an epitaxial Si buffer layer. Films grown this way have somewhat higher resistivities than those grown by the first method, but have lower misfit dislocation densities. The strain relief mechanism in these films also appears to be different from that of co-deposited films. Pinhole densities in films grown by both methods are below our detection limit of 103 cm−2.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1432-2145
    Keywords: Key words Pollen germination ; cDNA library ; Solanum berthaultii ; Protein kinase ; Antisense inhibition
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  A cDNA clone (1.7 kb) isolated from a cDNA library of in-vitro germinated pollen from the potato species Solanum berthaultii contains an open reading frame of 465 amino acid residues. The predicted protein sequence has typical sequence characteristics of the catalytic subunit of the cyclic-nucleotide dependent protein kinases isolated from yeasts and animals, and the gene has been provisionally termed SBPK, (Solanum berthaultii protein kinase) A transcript of about 1.9 kb was detected on a northern blot in developing anthers, mature pollen, and in-vitro germinated pollen, but not in other plant tissues. The expression in anthers corresponds to the late uninucleate stage of microspore development. Isolation and nucleotide sequencing of a SBPK genomic clone revealed the kinase transcribed region to be interrupted by two introns, both close to the 5′end of the open reading frame, one upstream and one downstream of the start codon. Chimeric genes were constructed by fusing the coding sequence in the antisense orientation to the promoter of a strong late-expressed pollen gene, LAT52, and introduced in potato. Transformants fell into two classes, one displaying a typical antisense phenotype, and a second type arising from a cosuppression event. Both types of transformant gave rise to increased proportions of defective pollen, although the cosuppression effect was more severe. The results indicate that this anther-expressed protein kinase is essential for pollen development in potato.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1432-2145
    Keywords: Immunolocalization ; Pistil protein (Sk2) ; Solanum tuberosum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Sk2 protein is the most abundant member of the pistil-specific proteins of Solanum tuberosum. Sk2 protein has been localized by use of a polyclonal antibody (anti-Sk2) in the pistils of four clones of Solanum tuberosum. In the stigmas Sk2 protein accumulates to a high level in the cytoplasm of the internal secretory cells underlying the papillae one day prior to anthesis. In styles, the intercellular matrix of the transmitting tissue cells is intensely labelled by anti-Sk2. Sk2 protein is present in all four clones and shows the same labelling pattern. The possible role of the Sk2 protein in pollen tube growth is discussed.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1432-2242
    Keywords: RFLP ; Potato ; Tomato ; Genetic maps
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary An RFLP linkage map of the potato is presented which comprises 304 loci derived from 230 DNA probes and one morphological marker (tuber skin color). The self-incompatibility locus of potato was mapped to chromosome I, which is homoeologous to tomato chromosome I. By mapping chromosome-specific tomato RFLP markers in potato and, vice versa, potato markers in tomato, the different potato and tomato RFLP maps were aligned to each other and the similarity of the potato and tomato genome was confirmed. The numbers given to the 12 potato chromosomes are now in accordance with the established tomato nomenclature. Comparisons between potato RFLP maps derived from different genetic backgrounds revealed conservation of marker order but differences in chromosome and total map length. In particular, significant reduction of map length was observed in interspecific compared to intraspecific crosses. The distribution of regions with distorted segregation ratios in the genome was analyzed for four potato parents. The most prominent distortion of recombination was found to be caused by the self-incompatibility locus.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 22 (1989), S. 523-527 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A system has been constructed which uses a primary-beam focusing monochromator Debye–Scherrer X-ray method to perform simultaneously in situ X-ray diffraction and resistivity measurements at temperatures of 100 to 1000 K. The Inel curved linear detector, which is capable of recording 120° of 20 angle without moving the detector, makes the Debye–Scherrer geometry possible for high-speed dynamic studies. The angular resolution of this system is sufficient to observe the separation of a mixture of tungsten and molybdenum powders. The sensitivity of the system makes it possible to record the diffraction pattern from a 100 Å gold film. The sheet resistivity of the sample can be recorded simultaneously to provide a structure-property correlation. Comparisons with other X-ray diffraction methods using thin films are discussed.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Company
    Nature biotechnology 7 (1989), S. 1281-1285 
    ISSN: 1546-1696
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: [Auszug] For successful bread-making, dough made from wheat flour needs to have considerable elasticity. The elasticity is provided in part by seed storage proteins called high molecular weight (HMW) glutenin subunits. Two particular HMW subunits, numbers 12 and 10 have been found previously to confer ...
    Type of Medium: Electronic Resource
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