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  • 1
    Electronic Resource
    Electronic Resource
    Heteroepitaxial structures of SrTiO3/TiN on Si(100) by in situ pulsed laser deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6720-6724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality ceramics based heteroepitaxial structures of oxide-nitride-semiconductors, i.e., SrTiO3/TiN/Si(100) have been fabricated by in situ pulsed laser deposition. The dependence of substrate temperature and oxygen partial pressure on the crystalline quality of the SrTiO3 films on Si with epitaxial TiN template has been examined. We found that epitaxial growth occurs on TiN/Si(100) above 500 °C, initially at a reduced O2 pressure (10−6 Torr), and followed by a deposition in the range of 5–10×10−4 Torr. X-ray diffraction (aitch-theta, ω, and Φ scans) and transmission electron microscope (TEM) results revealed an excellent alignment of SrTiO3 and TiN films on Si(100) with a cube-on-cube epitaxy. Rutherford backscattering and ion channeling results show a channeling minimum yield (χmin) of ∼13% for the SrTiO3 films. High-resolution TEM results on the SrTiO3/TiN interface show that the epitaxial SrTiO3 film is separated from the TiN by an uniform 80–90 A(ring) crystalline interposing layer presumably of TiNxO1−x (oxy-nitride). The SrTiO3 film fabricated at 700 °C showed a high relative dielectric constant of 312 at the frequency of 1 MHz. The electrical resistivity and the breakdown field of the SrTiO3 films were more than 5×1012 Ω cm and 6×105 V cm−1, respectively. An estimated leakage current density measured at an electric field of 5×105 V/cm−1 was less than 10−7 A/cm2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363798
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4724-4728 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum nitride thin films have been grown epitaxially on Si(111) substrates, for the first time, by pulsed laser ablation of sintered AlN target. The influence of process parameters such as laser energy density, substrate temperature, pulse repetition rate, nitrogen partial pressure, etc. on epitaxial growth has been investigated to obtain high quality AlN films. These films were characterized by Fourier transform infrared spectroscopy, Raman spectroscopy, x-ray diffraction (aitch-theta and ω scans) technique, high resolution transmission electron microscopy, and scanning electron microscopy. The films deposited at laser energy density in the range of 2–3 J/cm2, substrate temperature of 750 °C, and base pressure of 3×10−7 Torr are single phase and highly oriented along c axis normal to the Si(111) planes. The results of x-ray diffraction and electron microscopy on these films clearly show the epitaxial growth of the AlN films with an orientational relationship of AlN[0001] (parallel) Si[111] and AlN[21¯1¯0] (parallel) Si[011¯]. The AlN/Si interface was found to be quite sharp without any indication of interfacial reaction. Laser physical vapor deposition is shown to produce high quality epitaxial AlN films with smooth surface morphology when deposited under optimized conditions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359441
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  • 3
    Electronic Resource
    Electronic Resource
    High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitrides (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2735-2737 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnO thin films with near perfect crystallinity have been grown epitaxially on sapphire (001) by pulsed laser deposition technique. The ω-rocking curve full width at half-maximum of the ZnO(002) peak for the films grown at 750 °C, oxygen pressure 10−5 Torr was 0.17°. The high degree of crystallinity was confirmed by ion channeling technique providing a minimum Rutherford backscattering yield of 2%–3% in the near-surface region (∼2000 Å). The atomic force microscopy revealed smooth hexagonal faceting of the ZnO films. It has been possible to deposit epitaxial AlN films of thickness 1000 Å on epi-ZnO/sapphire. Excellent crystalline properties of these epi-ZnO/sapphire heterostructures are, thus, promising for lattice-matched substrates for III–V nitride heteroepitaxy and optoelectronics devices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119006
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  • 4
    Electronic Resource
    Electronic Resource
    Pulsed excimer laser deposition Y1Ba2Cu3O7−x superconductor films on silicon with laser-deposited Y-ZrO2 buffer layer (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1805-1807 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pulsed excimer laser ablation method is used to deposit both the buffer layer of Y-stabilized ZrO2 and the overlayer of Y1Ba2Cu3O7−x superconductor on (100) oriented single-crystal silicon. Process parameter optimization study is carried out and it is shown that a thin film of the superconductor (0.5–0.7 μm) having a zero resistance temperature of 86 K can be obtained using a 0.3 μm buffer layer deposited at substrate temperatures between 600 and 800 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104142
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  • 5
    Electronic Resource
    Electronic Resource
    Pulsed laser-induced vaporization from the surface of a binary oxide (zinc ferrite) and its implications for synthesis of thin films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3197-3204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of pulsed ruby laser-induced vaporization from the surface of a binary oxide represented by ZnxFe3−xO4 (x∼1) is studied via morphological (scanning electron microscopy), compositional (energy-dispersive analysis of x ray), structural (small-angle x-ray diffraction), and microstructural (conversion electron Mössbauer) examination of the laser-processed surface and correlation of the related surface modification to the properties of thin films deposited therefrom, and subjected to similar examination. Zinc ferrite (ZnxFe3−xO4) films have been deposited on single-crystal Al2O3 substrates and the dependence of the film properties on the oxygen partial pressure and substrate temperature during deposition is studied to explore optimized conditions for deposition of near single-phase stoichiometric films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342671
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  • 6
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition and characterization of epitaxial Cu/TiN/Si(100) heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2565-2567 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three-dimensional epitaxial Cu/TiN/Si(100) heterostructures have been grown by pulsed laser deposition using a single chamber, in situ processing method. The epitaxial TiN layers on Si(100) were grown at 600 °C and epitaxial Cu layers on TiN/Si(100) in the temperature range 200–600 °C using optimized laser parameters. These structures were characterized using three-axis x-ray diffraction (aitch-theta, Φ, Ψ scans) technique and high-resolution transmission electron microscopy. The results clearly indicate cube-on-cube epitaxial alignment along the three axes, i.e., 〈100〉Cu(parallel)〈100〉TiN(parallel)〈100〉Si. The Cu/TiN and TiN/Si interfaces were found to be quite sharp without any indication of interfacial reaction. The growth mechanism of copper on TiN was found to be three dimensional, with the size of island varying from 0.3 to 1.5 μm. We discuss domain matching epitaxy as a mechanism of growth in these large lattice mismatch systems, where three lattice constants of Si(5.43 A(ring)) match with four of TiN(4.24 A(ring)) and seven units of Cu(3.62 A(ring)) match with six of the TiN. The implications of these results in the fabrication of advanced microelectronic devices are discussed. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112994
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  • 7
    Electronic Resource
    Electronic Resource
    High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1549-1551 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown high quality epitaxial AlN layers on sapphire substrates by pulsed laser ablation of a stoichiometric AlN target. The AlN films deposited at 800 °C and laser energy densities in the range of 2–3 J/cm2 were found to be epitaxial with the c axis normal to the Al2O3(0001) surface. The x-ray rocking curve of epitaxial AlN films yielded a full width at half maximum of 0.21°. The selected area electron diffraction patterns and high resolution transmission electron microscopy also revealed that the films were epitaxial with an orientational relationship of AlN[0001](parallel)Al2O3[0001] and in-plain alignment of AlN[1¯21¯0](parallel)Al2O3[01¯10] and AlN[101¯0](parallel)Al2O3[2¯110]. This is equivalent to 30° rotation in the basal plane of the AlN film with respect to the sapphire substrate. The absorption edge measured by ultraviolet-visible spectroscopy for the epitaxial AlN film was sharp and the band gap was found to be 6.1 eV. The electrical resistivity of the films was about 5–6×1013 ohm cm with a breakdown field of 5×106 V/cm. At higher laser energy densities ≥10 J/cm2 and lower temperatures ≤650 °C, the deposited films were nitrogen deficient and contained free metallic aluminum, both of which degrade the microstructural, electrical, and optical properties of the AlN films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114489
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  • 8
    Electronic Resource
    Electronic Resource
    Diamond nucleation on epitaxially grown Y-ZrO2 layers on Si(100) (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 740-742 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced nucleation of polycrystalline diamond has been achieved on Si(100) with an epitaxial intermediate layer of yttria stabilized zirconia (Y-ZrO2). The epitaxial Y-ZrO2 layer was grown by pulsed excimer laser ablation and the diamond deposition was accomplished using the hot filament chemical vapor deposition method. The morphological, structural, and defect properties of the diamond crystallites are studied using the techniques of scanning electron microscopy, x-ray diffraction, and laser Raman spectroscopy, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109946
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of oxygen background pressure on crystalline quality of SrTiO3 films grown on MgO by pulsed laser deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1709-1711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically investigated the effect of oxygen partial pressure (PO2) on the crystalline quality of SrTiO3 films grown on MgO (001) substrates using pulsed laser deposition and established optimized conditions for the growth of high-quality epitaxial films. The crystalline quality is found to improve significantly in the O2 pressure range of 0.5–1 mTorr, compared to the films deposited at higher pressures of 10–100 mTorr. The x-ray diffraction rocking curves for the films grown at PO2 of 1 mTorr and 100 mTorr yielded full width at half-maximum (FWHM) of 0.7° and 1.4°, respectively. The in-plane x-ray φ scans showed epitaxial cube-on-cube alignment of the films. Channeling yields χmin were found to be 〈5% for the 1 mTorr films and ∼14% for 100 mTorr films. Thermal annealing of the SrTiO3 films in oxygen further improves the quality, and the 1 mTorr films give FWHM of 0.13° and χmin of 1.7%. In-plane misorientations of the annealed SrTiO3 films calculated using results of transmission electron microscopy are ±0.7° for 1 mTorr and ±1.7° for the 10 mTorr film. The high temperature superconducting (high-Tc) Y1Ba2Cu3O7−δ films grown on these SrTiO3/MgO substrates showed a χmin of 2.0% and transition temperature of ∼92 K, indicating that SrTiO3 buffer layers on MgO can be used for growth of high-quality Y1Ba2Cu3O7−δ thin film heterostructures for use in high-Tc devices and next generation microelectronics devices requiring films with high dielectric constants. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120011
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  • 10
    Electronic Resource
    Electronic Resource
    Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 348-350 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnO thin films have been grown heteroepitaxially on epi-GaN/sapphire (0001) substrates. Rutherford backscattering spectroscopy, ion channeling, and high resolution transmission electron microscopy studies revealed high-quality epitaxial growth of ZnO on GaN with an atomically sharp interface. The x-ray diffraction and ion channeling measurements indicate near perfect alignment of the ZnO epilayers on GaN as compared to those grown directly on sapphire (0001). Low-temperature cathodoluminescence studies also indicate high optical quality of these films presumably due to the close lattice match and stacking order between ZnO and GaN. Lattice-matched epitaxy and good luminescence properties of ZnO/GaN heterostructures are thus promising for ultraviolet lasers. These heterostructures demonstrate the feasibility of integrating hybrid ZnO/GaN optoelectronic devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121830
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