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  • 1
    Electronic Resource
    Electronic Resource
    An investigation of the Pd-In-Ge nonspiking Ohmic contact to n-GaAs using transmission line measurement, Kelvin, and Cox and Strack structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4364-4372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Pd-In-Ge nonspiking Ohmic contact to n-GaAs has been investigated using the transmission line, the Kelvin, and the Cox and Strack structures. It has been found that a layered structure of Pd/In/Pd/n-GaAs with 10–20 A(ring) of Ge imbedded in the Pd layer adjacent to the GaAs can lead to a hybrid contact. When the Ohmic formation temperature is above 550 °C, a layer of InxGa1−xAs doped with Ge is formed between the GaAs structure and the metallization. When the Ohmic formation temperature is below 550 °C, a regrown layer of GaAs also doped with Ge is formed at the metallization/GaAs interface. The contact resistivity of 2–3×10−7 Ω cm2 for this contact structure is nearly independent of the contact area from 900 to 0.2 μm2. Low-temperature Ohmic characteristics and thermal stability are also examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348360
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  • 2
    Electronic Resource
    Electronic Resource
    KrF laser-induced ablation and patterning of Y–Ba–Cu–O films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2512-2514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ablation and patterning of Y–Ba–Cu–O films on (100) SrTiO3 and (100) MgO substrates by KrF excimer-laser light projection was investigated. Three different regimes of laser-material interactions were observed. Transition temperatures and critical current densities in laser-fabricated strip lines were investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346519
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  • 3
    Electronic Resource
    Electronic Resource
    Nonspiking ohmic contact to p-GaAs by solid-phase regrowth (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5714-5718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-resistance and nonspiking contact consisting of a layered structure of Si/Ni(Mg) on p-GaAs is formed by solid-phase regrowth. Backside secondary-ion mass spectrometry and cross-sectional transmission electron microscopy show an initial reaction between Ni and GaAs to form NixGaAs which is later decomposed to form NiSi by reacting with the Si overlayer. This reaction leads to the solid-phase epitaxial regrowth of a p+ -GaAs layer doped with Mg. The total consumption of substrate is limited to a few hundred angstroms. The as-formed ohmic contact structure is uniform and planar with an average specific contact resistivity of ∼7×10−7 Ω cm2 on substrates doped to 8×1018 cm−3. The thermal stability of this contact scheme is also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346990
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  • 4
    Electronic Resource
    Electronic Resource
    The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3124-3129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs has been investigated. This contact scheme has been shown to form planar contact interfaces with contact resistivities less than 1 × 10−6 Ω cm2. This investigation demonstrates that the contact resistivity can be modeled by a sum of two components in series: (i) a contact resistivity due to the metal-GaAs interface and (ii) a contact resistivity due to the high-low junction formed between the highly doped regrown GaAs layer and the substrate. For degenerately doped samples (4.5 × 1019 cm−3), the contact resistivity is nearly independent of the temperature from 300 to about 30 K, indicating that the dominant resistivity is that across the metal-semiconductor tunneling barrier. For samples with lower doping concentrations (≤ 1.5 × 1018 cm−3), the contact resistivity increases with decreasing temperature, suggesting the dominance of the contact resistivity due to the high-low junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348579
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetoresistivity and metamagnetism of the Nd33Fe50Al17 alloy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1763-1765 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ternary phase has been identified in the rare-earth transition metal Nd–Fe–Al system. This phase has a composition close to Nd5(Fe3Al)12 and is antiferromagnetic with a Neel temperature of approximately 260 K. A clear step appears in magnetization curves of the isotropic ribbon at temperatures below 140 K, indicating metamagnetism. Magnetoresistivity (MR) has been observed in this compound. MR increases with decreasing temperature and is estimated to be 7.2% at 4.2 K. This compound exhibits MR of 1% in the paramagnetic state at room temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124812
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  • 6
    Electronic Resource
    Electronic Resource
    Thermally stable and nonspiking Pd/Sb(Mn) ohmic contact to p-GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1617-1619 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thermally stable, nonspiking ohmic contact to p-GaAs has been developed based on the solid-phase regrowth mechanism. The contact metallization consists of a layered structure of Pd(250 A(ring))/Sb(100 A(ring))/Mn(10 A(ring))/Pd(250 A(ring))/p-GaAs. Thermal annealing of the contact between 300 and 600 °C for 10 s yields contact resistivities in the range of low 10−6 Ω cm2 on substrates doped to 2.5×1018 cm−3. A contact resistivity of 4.5×10−7 Ω cm2 can be obtained after annealing at 500 °C on samples with a doping concentration of 4.5×1019 cm−3. The contact metallization remains uniform in thickness and the contact interface is flat after the contact is formed. The consumption of the substrate is limited to less than a hundred angstroms. Contact resistivities are stable at 400 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105143
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  • 7
    Electronic Resource
    Electronic Resource
    Stable and shallow PdIn ohmic contacts to n-GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2129-2131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thermally stable, low-resistance PdIn ohmic contact to n-GaAs has been developed based on the solid phase regrowth mechanism [T. Sands, E. D. Marshall, and L. C. Wang, J. Mater. Res. 3, 914 (1988)]. Rapid thermal annealing of a Pd-In/Pd metallization induces a two-stage reaction resulting in the formation of a uniform single-phase film of PdIn, an intermetallic with a melting point greater than 1200 °C. A thin (∼5 nm) layer of average composition In0.4Ga0.6 As uniformly covers the interface between the PdIn layer and the GaAs substrate. Specific contact resistivities and contact resistances of ∼1×10−6 Ω cm2 and 0.14 Ω mm, respectively, were obtained for samples annealed at temperatures in the 600–650 °C range. The addition of a thin layer of Ge (2 nm) to the first Pd layer extends the optimum annealing temperature window down to 500 °C. Specific contact resistivities remained in the low 10−6 Ω cm2 range after subsequent annealing at 400 °C for over two days.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102993
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescent properties of Er-doped GaP deposited on Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 518-520 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Er-doped GaP layers were deposited on Si (111) substrates using atmospheric pressure metalorganic vapor phase epitaxy. A strong characteristic Er3+ intra-4f-shell emission at 0.80 eV (1.54 μm) is observed over the temperature range of 12–300 K. The integrated intensity of the 0.80 eV emission is only weakly temperature dependent, decreasing less than 50% as temperature increases from 12 to 300 K. These results indicate that Er-doped GaP thin films deposited on Si are suitable as a material for integrated optoelectronic applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115174
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  • 9
    Electronic Resource
    Electronic Resource
    In situ fabrication of superconducting Lu-Ba-Sr-Cu-O films by pulsed-laser deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2023-2025 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin superconducting films of single phase LuBa2Cu3O7 and LuBaSrCu3O7 have been synthesized by means of laser sputtering. The films show zero resistance at 90 and 54 K, respectively. The critical current density found with LuBa2Cu3O7 films at 83 K is in excess of 106 A/cm2. The synthesis of these materials by standard solid-state reactions has not yet been achieved successfully.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107131
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  • 10
    Electronic Resource
    Electronic Resource
    Electroluminescence from Er-doped GaP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 584-586 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroluminescent properties of the Er-doped GaP light-emitting diodes prepared by metalorganic vapor phase epitaxy and diffusion were investigated. Strong characteristic Er3+ intra-4f-shell emission at 0.80 eV is observed over the temperature range of 12–300 K. The electroluminescence intensity is only weakly temperature dependent, decreasing less than 40% as the temperature increases from 20 to 300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112985
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