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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2063-2065 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A hole concentration greater than 1020 cm−3 in GaAs has been achieved using a liquid CCl4 source for carbon in a low-pressure organometallic vapor phase epitaxy system. The resistivity and hole mobility measured at 300 K for a heavily carbon-doped (1.2×1020 cm−3) Hall sample made from a thin (180 nm) epitaxial layer were 8.0×10−4 Ω cm and 65 cm2/V s, respectively. Carbon-doped samples with excellent surface morphology were achieved using a V/III ratio of 22, and growth pressure and temperature of 80 Torr and 600 °C, respectively. A novel photoluminescence technique, based on band-gap shrinkage of heavily doped p+-GaAs, has been shown to be useful for nondestructive measurement of the hole concentration in submicrometer layers.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 907-915 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained layer superlattices of wurtzite CdS/CdSe have been grown on (111)A GaAs substrates by metalorganic chemical vapor deposition and their optical properties studied by photoluminescence spectroscopy. It is shown that the superlattice layers contain giant strain-induced piezoelectric fields exceeding 2×108 V m−1. These fields are similar to those reported for (111) orientated III–V superlattices, but an order of magnitude greater. The recombination energies from a series of samples provide evidence for a type II conduction band offset of 0.23±0.10 eV (the electron wells being in the CdS), with the band structure heavily modified by the internal electric fields. In addition, the photoluminescence peak emission energy shows a strong dependence on the excitation power. This is interpreted as further evidence for the effect of internal fields. We conclude that this system shows new effects not previously observed in II–VI compound superlattices. The large band-gap tunability and the space-charge effects offer possibilities for all-optical switching devices in the 700–1300-nm region of the spectrum.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 69 (1997), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The relative roles of the superoxide and hydroxyl radicals in oxidative stress-induced neuronal damage were investigated using organotypic hippocampal slice cultures. Cultures exposed to 100 µM duroquinone, a superoxide-generating compound, for 3 h developed CA1-selective lesions over a period of 24 h. The damage accounted for ∼64% of the CA1 subfield, whereas CA3 showed just 6% damage, a pattern of damage comparable to that observed following hypoxia/ischaemia. Duroquinone-induced damage was attenuated by a spin-trap agent. In contrast, hydroxyl radical-mediated damage, generated by exposure to 30 µM ferrous sulphate for 1 h, resulted in a CA3-dominant lesion. The damage developed over 24 h, similar to that observed with duroquinone, but with ∼45% damage in CA3 compared with only 7% in CA1. These data demonstrate a selective vulnerability of the CA1 pyramidal neurones to superoxide-induced damage and suggest that of the free radicals generated following hypoxia/ischaemia, superoxide, rather than hydroxyl radical, is instrumental in producing neuronal damage.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 45 (1973), S. 101-106 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2081-2083 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial heteroepitaxial growth and structure of thin CdS layers on GaAs has been studied by conventional and high-resolution transmission electron microscopy. The work highlights the dependence of CdS crystal type on GaAs substrate orientation. Wurtzite-structure CdS is formed on (111)A GaAs and it is found to relieve misfit stresses by the introduction of interfacial defects, often associated with steps at the interface. Sphalerite-structure CdS is produced by initial growth on (001)GaAs and, in this case, misfit stresses are more slowly relieved, first with the formation of an asymmetrical array of interfacial dislocations and inclined stacking faults.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1720-1724 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of a study of the electrical derivative chartacteristics of 1.3-μm InGaAsP buried heterostructure lasers with rectifying (nonlinear) electrical contacts are presented. A physical device model and an equivalent circuit model, including a metal-semiconductor contact, have been developed. This model is also appropriate to light emitting diodes and photodiodes. Solutions for the electrical derivative characteristics, dv/di and i dv/di vs i, of the equivalent circuit model are obtained and used to calculate the characteristics of 1.3-μm InGaAsP buried heterostructure lasers both with and without a rectifying contact. The calculated electrical derivative characteristics are compared to measured data for our lasers. Excellent agreement between measured and modeled characteristics is obtained and the analysis is shown to be useful for extracting detailed metal-semiconductor and p-n junction characteristics with high accuracy. The physical basis for nonlinear contacts to optoelectronic devices made from relatively wide band-gap semiconductors such as InP and InGaAsP is described. The results of this study are useful for characterization, modeling, failure mode analysis, and process control improvement of these devices.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1780-1786 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semiconductor-insulator-semiconductor n+-SI-n+ InP structures have been used effectively for current confinement in channeled substrate buried heterostructure lasers. The semi-insulating (SI) layer is produced by the implantation of Fe into a n+-InP substrate. The properties of this implanted layer and the role of the deep acceptor levels of Fe in controlling the transport properties of SI-InP are studied in this and the following paper (Part II). The principle of compensation is discussed and applied to the implanted layer, and current injection phenomena are described, emphasizing the important role of space-charge-limited (SCL) current. The electrical characteristics of the n+-SI-n+ structures reveal the classic trap-controlled SCL current behavior at low temperatures with a trap-filled limit achieved at 1.2 V, and an approximately trap-free SCL current at room temperature.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1787-1797 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of semi-insulating (SI) Fe-implanted InP are studied via the electrical and optical properties of p+-SI-n+ InP diodes. The current-voltage-temperature characteristics reveal a rich variety of transport processes in which the deep levels of Fe play a prominent role, including tunneling and field-assisted thermionic emission from these levels, and space-charge-limited double-injection current effects. From the analysis of these currents, different experimental estimates of the position of the deep levels have been obtained. These are compared with a direct experimental determination of their position from the measurement of the photocurrent spectra of the p+-SI-n+ diodes. These results establish the position of the iron acceptors at a level lying between 0.60–0.65 eV below the conduction band minimum. Capacitance spectroscopy of the p+-SI-n+ diodes revealed additional defect levels and carrier freeze-out effects at low temperatures.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1455-1457 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simple II–VI laser cavities were formed by cleaving epitaxial ZnSe samples containing a single CdSe quantum well of mean thickness about 1 monolayer. Time-integrated stimulated emission spectra of these lasers show little evidence of mode structure. A video camera enables temporal resolution of the stimulated emission spectra. Mode structure appears on the time-resolved spectra. In addition, however, video spectroscopy reveals spatial variations of wavelength and intensity in the laser output which are not well understood. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1087-1089 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocations in float-zone Si which has been plastically deformed and deliberately copper contaminated, and misfit dislocations in a relaxed Si1−xGex alloy layer grown on a Si substrate by molecular beam epitaxy, have been investigated by monochromatic and panchromatic cathodoluminescence imaging and by cathodoluminescence spectroscopy. The measurements show that the D3 and D4 luminescence features originate on the slip lines in plastically deformed Si and at the misfit dislocations in the Si1−xGex alloy layer whereas the D1 and D2 bands are dominant between the slip lines and the misfit dislocations.
    Type of Medium: Electronic Resource
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