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  • 1
    Electronic Resource
    Electronic Resource
    Effects of BCl3 magnetron ion etching on deep levels in GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5512-5513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance versus voltage curves and deep-level transient spectroscopy have been used to investigate the effects of BCl3 magnetron ion etching on the shallow donor concentration and deep-level defects in GaAs. Capacitance versus voltage data reveal that the shallow donor concentration is unaffected by the etching process at power densities ranging from 0.08 to 0.4 W/cm2. Capacitance transient measurements reveal thermal emission of electrons from two deep defect sites with activation energies of 0.25 and 0.74 eV which were unaffected by the etching process. A broad, deep-level transient spectroscopy peak, characterized by an activation energy for thermal emission of electrons of 0.37 eV, was also observed in the etched sample, but not in the unetched sample. Defect depth profiling of the 0.37 eV peak indicates the concentration of this defect to increase with increasing etch power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351947
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular-beam-epitaxial-grown n-GaAs1−xSbx/N-GaAs heterostructures characterized by admittance spectroscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7491-7495 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The admittance spectroscopy technique has been applied to characterize deep traps in molecular-beam-epitaxial-grown n-GaAs1−xSbx/N-GaAs heterostructures. A single dominant defect has been identified in each of the three samples containing different Sb content. It was found that the substrate misorientation appears to affect the formation of the dominant defect, resulting in different defects in samples grown under the same conditions. It shows a good agreement when comparing the admittance spectroscopy results with those of the previously reported work of deep-level transient spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353995
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  • 3
    Electronic Resource
    Electronic Resource
    Preisach analysis of two ferromagnetic perovskites: La0.95Mg0.05MnO3 and La0.5Sr0.5CoO3 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7248-7250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the major hysteresis loop and of the temperature dependence of the field cooled and zero field cooled moment in applied fields less than the coercive field have been performed on two ferromagnetic perovskites La0.95Mg0.05MnO3 and La0.5Sr0.5CoO3. The data have been analyzed within the framework of a generalized Preisach model which includes thermal fluctuations, critical effects, and a temperature dependent distribution of free energy barriers. The analysis shows that the response functions of the manganese perovskite are dominated by the growth of the anisotropy barriers, while in the cobalt perovskite, thermal fluctuations and barrier growth play a roughly equal role. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355340
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  • 4
    Electronic Resource
    Electronic Resource
    Design of solid/liquid–liquid/solid trilayer systems for the measurement of diffusion coefficients in liquid metals (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3002-3005 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new method for investigation of diffusion processes in liquid metals with solid/liquid–liquid/solid trilayer systems is described. The design of this kind of trilayers enables diffusion processes with no effects from gravity-induced convection and Maragoni-convection conditions. The Ta/Zn–Sn/Si trilayers were prepared and the interdiffusion of liquid zinc and tin at 500 °C was investigated. The interdiffusion coefficients range from 1.0×10−4 to 2.8×10−4 mm2/s, which are less than previous values measured by capillary reservoir technique under 1 g environment where various kinds of convection exist. It is the removing of disturbances of these kinds of convection that brings about the precise interdiffusion coefficients in liquid metals. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149047
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  • 5
    Electronic Resource
    Electronic Resource
    Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2810-2812 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A set of sulfur-doped low pressure metalorganic vapor phase epitaxy InP/InGaAsP single quantum wells have been studied by admittance spectroscopy and a variety of other techniques. Admittance spectroscopy allows the studies of carrier emission from both the sulfur shallow impurity state and a quantum well which is seen to behave like a giant trap. The electron emission rates will be reported and the sulfur shallow impurity level is found to be 10 meV, in agreement with a simple theoretical calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109217
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  • 6
    Electronic Resource
    Electronic Resource
    Traps in semi-insulating InP studied by thermally stimulated current spectroscopy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 589-591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Traps in Fe-doped semi-insulating InP samples have been studied by thermally stimulated current spectroscopy with IR (hν≤1.12 eV) excitation at 81 K. The possible involvement of native defects in determining the compensation mechanisms is suggested based on the observation of other than the usual 0.64 eV Fe-related activation energy for the dark current in one of the four samples supplied from different sources. A metastable behavior of traps in another sample was found and explained by a charge-controlled defect reaction model. Three out of the six traps observed are suggested to be electron traps and one among the other three traps is believed to be a hole trap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108474
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  • 7
    Electronic Resource
    Electronic Resource
    Smooth etching of single crystal 6H-SiC in an electron cyclotron resonance plasma reactor (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2315-2317 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal 6H-SiC has been etched using a CF4/O2 gas mixture in an electron cyclotron resonance (ECR) plasma reactor. ECR etching results in SiC surfaces which are extremely smooth, without the problematic micromasking effects which have been reported to result from reactive ion etching in capacitively coupled radio-frequency plasma reactors. The effects of microwave power, total pressure, substrate temperature, and substrate bias on the etch rate, surface morphology, etch profile, and etch selectivity have been evaluated. The etch rate increases with increasing power and bias, and decreasing pressure. However, high biases lead to enhanced etching in regions adjacent to sidewall features. Improved etch profiles and selectivity are obtained with lower applied substrate bias.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111629
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  • 8
    Electronic Resource
    Electronic Resource
    Evaluation of effective mass transport coefficients through comparison of solidification on the ground and on board a satellite (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 64-65 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mass transport caused by buoyancy convection in front of the solid–liquid interface was evaluated in terms of measurements of primary dendritic spacing combining with separation of the effective (or integral) mass transport coefficient DL. It was shown that DL in normal gravity (1g) condition was 1.64 times as high as that in microgravity (μg) condition at the cooling rate (v) of 0.056 K/s for Pd40Ni40P20 alloy. The higher DL value is due to the contribution of buoyancy convection on the ground. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119469
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  • 9
    Electronic Resource
    Electronic Resource
    Low damage and residue-free dry etching of 6H–SiC using electron cyclotron resonance plasma (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 368-370 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dry etching-induced surface damage and contamination on SiC have been investigated for electron cyclotron resonance (ECR) plasma etching and conventional reactive ion etching (RIE) using a CF4/O2 gas mixture. Auger electron spectroscopy shows that there is no residue on the ECR etched surfaces and sidewalls of the etched structures. In contrast, the conventional RIE process leaves residues containing large amounts of Al, F, and O impurities on the surfaces and the etched sidewalls. Pd Schottky diodes on the ECR etched surface show a near-ideal diode characteristics with ideality factor of 1.06, indicating a good surface quality. Pd Schottky diodes on the conventional RIE etched surface, however, have a substantially reduced barrier height from 1.05 eV for the as-grown sample to 0.64 eV and a high ideality factor of 1.27, indicating a substantially damaged surface. Significant free-carrier reduction is observed in the RIE etched sample. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114631
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  • 10
    Electronic Resource
    Electronic Resource
    Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2776-2778 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of CrSb grown by solid-source molecular-beam epitaxy on GaAs, (Al, Ga)Sb, and GaSb are found to exhibit ferromagnetism. Reflection high-energy electron diffraction and high-resolution cross sectional transmission electron microscopy both indicate that the structure is zincblende. Temperature dependence of remanent magnetization shows that the ferromagnetic transition temperature is beyond 400 K. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413732
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