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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6336-6340 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silver (Ag) contacts to very thin superconducting YBa2Cu3O7−x films were prepared by thermal evaporation. The nature of the Ag/YBa2Cu3O7−x contact during thermal treatment was in situ investigated by a combination of three- and four-terminal resistance measurements. The experimental results suggested that the interaction between Ag and the YBa2Cu3O7−x film began at a temperature of around 370 °C. The contact resistance measurement for different films also demonstrated that the contact property was a strong function of the film quality and surface conditions. The lack of reproducibility in forming a low-resistance contact to very thin YBa2Cu3O7−x films and the high probability of degrading the film quality after thermal treatment of the contact might be due to the excess Ag doping in YBa2Cu3O7−x. Ag island formation, as revealed by scanning electron microscopy after thermal treatment of the contact, is a limitation of Ag for use as a good contact electrode for very thin superconducting films.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7167-7169 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical properties of in situ laser deposited thin films of YBa2Cu3O7−x on SrTiO3(110) substrates were studied as a function of deposition temperature. It was found that at low temperatures, grains with the 〈110〉 axis perpendicular to the substrate surface dominated. At higher temperatures, 〈103〉 perpendicular films were obtained. The Jc was found to be extremely anisotropic. For 〈103〉 perpendicular films at 70 K, the Jc's were found to be 0.85×106 A/cm2 and 5×102 A/cm2 along the substrate 〈100〉 and 〈110〉 directions, respectively.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6349-6354 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The number densities n(t) of the atomic species produced by pulsed-laser (532-nm) interaction with YBaCuO targets were measured using time-resolved resonant absorption spectroscopy. At ∼5 J/cm2 fluence and 0.8 mm above the target, the peak n(t) ranged from 1013 to 1015 cm−3. The distributions of the normal z-velocity component could be modeled by Gaussian functions, in agreement with the theory of supersonic nozzle beams and the more recent theory of Knudsen layer formation. Such theoretical fits gave most probable z velocities in the km/s range and Mach numbers as high as 7. Ba-ion z velocities were better fitted by a 4:7 mix of fast (∼3-km/s) and slow (∼2-km/s) components.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 553-555 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The noise of YBa2Cu3O7−x and Tl2Ba2Cr2Cu3O10−x thin films in the frequency range from 0.5 Hz to 100 kHz was studied. In the normal state, it was found that 1/f noise dominated, with a magnitude strongly dependent on temperature. In the superconducting state, the noise was only observable at frequencies below 5 Hz with our present setup. Equilibrium thermal fluctuation noise was not observed in these films.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4082-4084 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical contact resistivities of both Al and Cu single layer contacts as well as Cu/Au and Al/Au bilayer metal contacts to YBa2Cu3O7−x (YBCO) thin film have been studied. It was found that aluminum and copper make poor electrical contacts to YBCO due to interface reactions. These contacts have large contact resistivity (10−1–1 Ω cm2), orders of magnitude higher than that of a gold/YBCO contact (10−6 Ω cm2). When an ultrathin Au interlayer (10–30 A(ring)) was inserted between an Al or Cu overlayer and a YBCO film, interface reaction was greatly reduced. The contact resistivities of Al/Au and Cu/Au bilayer-metal contacts dropped by five orders of magnitude when Au interlayer thickness was increased from 0 to 10 A(ring). With the gold interlayer thickness of 15 A(ring), the Al/Au and Cu/Au bilayer-metal contacts reached a minimum contact resistivity, approaching that of a thick single-layer Au metal contact.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 540-542 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degree of texturing of the grains in epitaxial in situ Y-Ba-Cu-O films was studied by x-ray pole-figure measurements. These high Tc and Jc laser deposited films were all aligned with the c axis perpendicular to the substrate surface. It was found that films on SrTiO3(001) and LaAlO3(001) were totally aligned with the YBCO a axis parallel to the 〈100〉 direction on the substrate. For MgO(001), 4% of the grains are aligned in the 〈110〉 direction. For yttria stabilized zirconia (001), the a axes of the YBCO grains were distributed between the 〈100〉 and 〈110〉 directions on the substrate. These observations are consistent with the degree of lattice mismatch in the various crystal orientations.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1-3 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recombination lifetime in CdSx Se1−x semiconductor-doped glass was measured by time-resolved photoluminescence. It was found that long-term exposure of the glass to high-intensity laser pulses produced a permanent reduction of the free-carrier lifetime from 80 ps to less than 10 ps. This change could be reversed by thermal annealing and should have applications to ultrafast optical signal processing.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 954-956 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An oxygen jet placed near the target during plasma-assisted laser deposition produces a strong atomic oxygen beam with kinetic energies of 5.6 eV, simultaneous with the laser-induced atomic beams of Ba, Cu, and Y from the target. All atomic beams can be well characterized by a supersonic expansion mechanism. The behavior of the velocity distributions was studied as a function of the distance from the target and laser energy fluence. A target-substrate separation of 7 cm was found to be optimum in terms of producing the best as-deposited films. At that distance, the velocity distributions of all atomic beams become nearly the same.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 643-645 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence spectra of CdSx Se1−x doped glasses were found to be strongly dependent on the pumping laser intensity. Two spectral features corresponding to two different recombination mechanisms were identified. The dynamic behavior can be explained by the competition between tunneling-mediated recombination of deeply trapped charges and direct recombination of excitons, free and shallowly trapped carriers, and nonradiative recombination. Large (〉30 nm) blue shifts of both peaks were also observed as a function of the laser intensity.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1095-1097 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdS films have been grown by laser-evaporation deposition in a clean vacuum environment. The films are highly oriented with a c axis perpendicular to the surface, and are optically smooth and homogeneous. These high quality films should be useful in nonlinear integrated optics applications.
    Type of Medium: Electronic Resource
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