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  • 1
    Electronic Resource
    Electronic Resource
    Pt/Ti/p-InGaAsP nonalloyed ohmic contact formed by rapid thermal processing (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4319-4323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonalloyed ohmic contacts of Pt/Ti to 5×1018 cm−3 doped p-InGaAsP (λg =1.3 μm) have been fabricated by rapid thermal processing of sputtered and e-gun-deposited metallizations. While the former as-deposited had a rectifying characteristic, the latter showed ohmic behavior prior to any heat treatment, with a specific contact resistance of 4×10−3 Ω cm2. Rapid thermal processing at temperatures higher than 400 °C caused the formation of ohmic contacts for the sputtered metals also, but with the evaporated metals producing slightly lower contact resistance. The lowest specific contact resistance values of 3.6–5.5×10−4 Ω cm2 for evaporated and sputtered metallizations, respectively, were achieved in both cases as a result of heating at 450 °C for 30 s. These heating conditions produced only a limited reaction at the Ti/InGaAsP interface, which was sharper for the e-gun-deposited contact, but had a significant effect on the stresses in the Ti/Pt bilayer. In both the sputtered and electron gun evaporated samples, the stresses were inverted from tensile as-deposited to compressive with values of 2.4×109 and 1.0×109 dyn cm−2, respectively, as a result of the heat treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343291
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of GaAs films grown by metalorganic chemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5349-5353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied undoped GaAs films grown by metalorganic chemical vapor deposition in a vertical geometry atmospheric pressure reactor. Our results on the surface morphology, carrier concentration and conductivity type and low-temperature photoluminescence spectra of the films, studied as a function of substrate temperature and As/Ga flux during growth, are generally in agreement with previous studies. In addition, we also report the effect of rotation speed of the substrate during growth. It is found that lower speeds give higher defect density and less n-type films and most notably enhance a defect exciton line at 1.5119 eV. From the free-to-bound transitions and from the dependence of the intensities of the exciton lines on growth temperature and As/Ga flux we inferred that the acceptors in our films are C, Zn, Mg and donors are those substituting on Ga sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334854
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of InGaAsP/InP single-quantum-well and multiple-quantum well structures by low-pressure metal-organic chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7267-7272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAsP/InP single-quantum well and multiquantum-well (MQW) structures have been successfully grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The quantum wells grown consist of 1.3- and 1.5-μm composition InGaAsP, with barriers of InP. Layer thicknesses vary from 18 to 1300 A(ring) for the various structures grown. Analysis of these structures by low-temperature photoluminescence reveals distinct, sharp luminescent peaks, with half-widths from 4.8 to 13 meV. Cross-sectional transmission electron microscopy (XTEM) and Auger spectroscopy of the quantum-well structures reveals extremely sharp interfaces and homogeneous composition, demonstrating the feasibility of LP-MOCVD for the growth of very thin epitaxial layers. This preliminary data indicates that the growth of MQW structures for the next generation of laser diodes (i.e., MQW-distributed-feedback lasers), with monolayer interfacial abruptness, is possible by LP-MOCVD.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347624
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  • 4
    Electronic Resource
    Electronic Resource
    Pt/Ti/p-In0.53Ga0.47As low-resistance nonalloyed ohmic contact formed by rapid thermal processing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2306-2308 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very low resistance nonalloyed ohmic contacts of Pt/Ti to 1.5×1019 cm−3 Zn-doped In0.53Ga0.47As have been formed by rapid thermal processing. These contacts were ohmic as deposited with a specific contact resistance value of 3.0×10−4 Ω cm2. Cross-sectional transmission electron microscopy showed a very limited interfacial reacted layer (20 nm thick) between the Ti and the InGaAs as a result of heating at 450 °C for 30 s. The interfacial layer contained mostly InAs and a small portion of other five binary phases. Heating at 500 °C or higher temperatures resulted in an extensive interaction and degradation of the contact. The contact formed at 450 °C, 30 s exhibited tensile stress of 5.6×109 dyne cm−2 at the Ti/Pt bilayer, but the metal adhesion remained strong. Rapid thermal processing at 450 °C for 30 s decreased the specific contact resistance to a minimum with an extremely low value of 3.4×10−8 Ω cm2 (0.08 Ω mm), which is very close to the theoretical prediction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101110
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  • 5
    Electronic Resource
    Electronic Resource
    Thermodynamic interpretation of quaternary (InGaAsP) layer uniformity grown by low-pressure metalorganic vapor phase epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 360-362 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: According to a recent study, the compositional nonuniformity for group V sites of quaternary (Q) In0.68Ga0.32As0.7P0.3 layers (λ=1.35 μm) grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) on 50 mm diam InP wafers was reduced from 3% to 1% when tertiary butyl phosphine (TBP)+AsH3 instead of PH3+AsH3 or TBP+tertiary butyl arsine (TBAs) were employed. In this letter we offer a thermodynamic interpretation of these observations. Under LP-MOVPE conditions at a total pressure of 0.08 atm for fully decomposed group V precursors diluted with H2, we show that while the dominant species are the tetramers, the concentration of the dimers is significant and becomes more prominent with rising temperature (T). Examining the [As/P] ratio in the gas phase as a function of reciprocal T, we demonstrate that in the MOVPE range (900–950 K) the slope of these curves changes from steep to moderate and then nearly flat for the sources AsH3+PH3, TBAs+TBP, and AsH3+TBP, respectively. The insensitivity of the [As/P] ratio to the ∼30 K gradient over the susceptor when combining AsH3 and TBP suggests a very effective method to assure compositional uniformity in Q layers prepared by LP-MOVPE. Uniformity results for atmospheric pressure MOVPE employing AsH3 and PH3 are also consistent with the thermodynamic argument.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108956
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  • 6
    Electronic Resource
    Electronic Resource
    Enhancement of photoluminescence from DX centers in AlGaAs heterostructures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1979-1981 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selectively excited room-temperature photoluminescence spectra of InGaAs-GaAs-AlGaAs quantum well heterostructures reveal a broad line at midgap energies originating in the Si doped AlGaAs. When carriers are photoexcited directly in the wells, this line is dramatically enhanced at the expense of the quantum well line, indicating carriers escape from the wells. The broad emission and its enhancement can be explained in terms of recombination between electrons trapped at DX centers in AlGaAs and holes transferred into AlGaAs from the neighboring wells. We also observe the broad emission by direct over-the-gap photoexcitation of very highly doped Si:AlGaAs. The doping dependence consistently correlates this line to DX centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109509
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