ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In n-type 4H-SiC, over-oxidation of an implanted surface-near, Gaussian nitrogen-profileresults in MOS capacitors, which possess a distinctly reduced density of interface states Dit and anundesirable large negative flatband voltage UFB. Their values are determined by the implantationparameters and the thickness of the oxide layer. The negative flatband voltage can strongly becompensated in the case that a Gaussian aluminum-profile is co-implanted prior to the oxidation.Depending on the conditions of the Al implantation, UFB can be controlled within a wide range.Secondary ion mass spectrometry analyses reveal that the implanted N and Al atoms are mobile inthe oxide layer during the oxidation process and are partly accumulated at the SiC/SiO2 interface
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.555.pdf
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