Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 10-12 (Jan. 1986), p. 711-716 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    International Journal of Quantum Chemistry 29 (1986), S. 1059-1066 
    ISSN: 0020-7608
    Keywords: Computational Chemistry and Molecular Modeling ; Atomic, Molecular and Optical Physics
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Results are presented of a Hartree-Fock cluster study of interstitial Ti, V, Cr, and Mn impurities in silicon. A Si10 cluster models the nearest Si atoms around a tetrahedral interstitial site in crystalline Si. The dangling bonds of the Si atoms are saturated by hydrogens. The effect of the Si core electrons is represented by an effective potential. Characteristic for the electronic structure of the low-lying states of the neutral, singly positive, and doubly positive ions in silicon is the presence of fairly delocalized but still predominantly transition-metal (3d)-like orbitals of t2 and e symmetry. For all ions the energy of the weighted average of the terms belonging to a configuration is lowest for the configuration with maximum occupation of the t2 orbitals. Ground states with maximum spin multiplicity are found for all ions, except Ti0.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    International Journal of Quantum Chemistry 34 (1988), S. 297-308 
    ISSN: 0020-7608
    Keywords: Computational Chemistry and Molecular Modeling ; Atomic, Molecular and Optical Physics
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The application of molecular ab initio methods to investigate the electronic structure of localized impurities in semiconductors requires the study of the convergence of the results with increasing cluster size. Here we compare results for interstitial Ti in silicon, obtained with clusters of increasing size: TiSi10H16, TiSi30H40, and TiSi66H64. These clusters contain one, two, or three shells of silicon atoms, respectively, centered around Ti at a Td interstitial site. The hydrogen atoms serve as saturators of the dangling bonds. The Si core electrons are replaced by an effective potential. The calculations are based on open shell RHF theory and limited CI extensions. The charge distribution in the central part of the three clusters is very similar. In the clusters the partially occupied orbitals are much more delocalized than the 3d orbitals in the free ions. The total impurity-induced electronic charge, however, is quite localized, due to the compensating response of the Si closed shell density. Ionization of the impurity also causes a compensating response of the Si closed shells: only about 10% of the density difference is in the impurity region and the major part is behind the outermost shell of Si atoms. Transition metal associated (3d-like) excitation energies are not very dependent on the cluster size, and the relative ordering of the lowest lying states remains unchanged. Impurity associated ionization energies decrease considerably due to the extra relaxation offered by the additional shells of Si atoms. Our results indicate that a reliable description of interstitial transition metals in silicon can be provided by calculations on reasonably small clusters: Si30H40 is sufficiently large.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...