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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 10-12 (Jan. 1986), p. 711-716 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Chemical Physics Letters 42 (1976), S. 525-529 
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 7162-7169 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The character of the low-lying excited states of diatomic CuCl is studied primarily by means of the complete active space self-consistent field (CASSCF), method and a second order perturbation approach with the CASSCF wave function as reference state [complete active space perturbation theory to second order (CASPT2)]. For comparison, the lower levels of the spectra of the Cu+ ion are also analyzed. A first order treatment of the scalar relativistic effects, the mass–velocity and Darwin terms, is included in the calculations. The importance of spin–orbit interactions is investigated by comparing our nonrelativistic valence shell CI (VCI) and relativistic results obtained with our four-component program suite MOLFDIR. The six lowest excited states of the CuCl molecule, which are related to the Cu+(3d94s1)Cl−(3s23p6) ionic configuration, are assigned. The assignments agree with earlier theoretical work. Where they can be compared, the calculated spectroscopic constants are in good agreement with the experimental data. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 3287-3291 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The results are reported of ab initio calculations on the magnetic ordering in NiO, a prototype of the antiferromagnetic insulator. By analyzing wave functions for different cluster models, information is obtained about the physical effects determining the sign and the magnitude of the magnetic coupling parameter J. The role of the edge oxygens, surrounding the essential unit (Ni2O), is found to be quantitatively important but purely environmental in contrast to the role of the bridging oxygen. Furthermore, the importance of electron correlation and the usefulness of pseudopotentials in the calculations is investigated. The final result for J compares reasonably with experiment (about 50%), and possible sources for the remaining discrepancies are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 0301-0104
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Chemical Physics 102 (1986), S. 103-111 
    ISSN: 0301-0104
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Electron Spectroscopy and Related Phenomena 29 (1983), S. 225-232 
    ISSN: 0368-2048
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Theoretical chemistry accounts 73 (1988), S. 405-418 
    ISSN: 1432-2234
    Keywords: Valence hole states ; Symmetry breaking ; Localized orbitals
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The localization of ligand-based valence holes in the tetrahedral complex ion [CrO4]2− in a crystalline environment is studied by SCF calculations on the hole states, with progressively less restrictions on the spatial symmetry of the molecular orbitals. The final wavefunctions are obtained by constructing, from the symmetry broken SCF solutions, wavefunctions that exhibit again the proper transformation properties under the operations of T d . The crystal environment of the [CrO4]2− anion is represented by a point charge model. In contrast with the situation for core hole states, the projection afterwards into T d symmetry is important. The final ionization energies, which are obtained from projected C 3v adapted SCF solutions, are reduced considerably (≅3 eV) with respect to the T d ΔSCF results, but the ordering of the states has not changed essentially. The calculated ionization energies compare favourably with results of XPS experiments on Na2CrO4. The evaluation of the energies of projected symmetry broken SCF solutions requires the calculation of hamiltonian matrix elements between determinantal wavefunctions built from mutually non-orthogonal orbital sets. An efficient method for the calculation of such matrix elements is presented.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    International Journal of Quantum Chemistry 29 (1986), S. 1059-1066 
    ISSN: 0020-7608
    Keywords: Computational Chemistry and Molecular Modeling ; Atomic, Molecular and Optical Physics
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Results are presented of a Hartree-Fock cluster study of interstitial Ti, V, Cr, and Mn impurities in silicon. A Si10 cluster models the nearest Si atoms around a tetrahedral interstitial site in crystalline Si. The dangling bonds of the Si atoms are saturated by hydrogens. The effect of the Si core electrons is represented by an effective potential. Characteristic for the electronic structure of the low-lying states of the neutral, singly positive, and doubly positive ions in silicon is the presence of fairly delocalized but still predominantly transition-metal (3d)-like orbitals of t2 and e symmetry. For all ions the energy of the weighted average of the terms belonging to a configuration is lowest for the configuration with maximum occupation of the t2 orbitals. Ground states with maximum spin multiplicity are found for all ions, except Ti0.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    International Journal of Quantum Chemistry 34 (1988), S. 297-308 
    ISSN: 0020-7608
    Keywords: Computational Chemistry and Molecular Modeling ; Atomic, Molecular and Optical Physics
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The application of molecular ab initio methods to investigate the electronic structure of localized impurities in semiconductors requires the study of the convergence of the results with increasing cluster size. Here we compare results for interstitial Ti in silicon, obtained with clusters of increasing size: TiSi10H16, TiSi30H40, and TiSi66H64. These clusters contain one, two, or three shells of silicon atoms, respectively, centered around Ti at a Td interstitial site. The hydrogen atoms serve as saturators of the dangling bonds. The Si core electrons are replaced by an effective potential. The calculations are based on open shell RHF theory and limited CI extensions. The charge distribution in the central part of the three clusters is very similar. In the clusters the partially occupied orbitals are much more delocalized than the 3d orbitals in the free ions. The total impurity-induced electronic charge, however, is quite localized, due to the compensating response of the Si closed shell density. Ionization of the impurity also causes a compensating response of the Si closed shells: only about 10% of the density difference is in the impurity region and the major part is behind the outermost shell of Si atoms. Transition metal associated (3d-like) excitation energies are not very dependent on the cluster size, and the relative ordering of the lowest lying states remains unchanged. Impurity associated ionization energies decrease considerably due to the extra relaxation offered by the additional shells of Si atoms. Our results indicate that a reliable description of interstitial transition metals in silicon can be provided by calculations on reasonably small clusters: Si30H40 is sufficiently large.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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