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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Exchange biasing has been studied for a series of [100] and [111] oriented, epitaxial Fe3O4/CoO bilayers grown by oxidic MBE. The low-temperature exchange biasing versus CoO layer thickness is compared to theoretical models for exchange biasing. We argue that the Malozemoff random field model does not apply to this system. The exchange biasing calculated according to the Meiklejohn–Bean model, assuming nearest-neighbor exchange coupling across a flat and magnetically uncompensated interface, differs for [100] oriented bilayers by a factor of (approximately-equal-to)8 from the experimental value. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5100-5105 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Through a systematic investigation of the complete dielectric tensor, between 0.5 and 5.0 eV, of Fe3O4 and of related spinel ferrites, i.e., MgFe2O4, Li0.5Fe2.5O4, NiFe2O4, and CoFe2O4, we have established that intervalence charge transfer and intersublattice charge transfer transitions dominate the optical and magneto-optical spectrum (between 0.5 and 5.0 eV) of all spinel ferrites of the general composition MexFe3−xO4. In all cases examined the same set of intersublattice charge transfer transitions was observed. These are the only transitions observed in the cases where Me is a nonmagnetic ion (Mg2+, Li+). In the cases where Me is a magnetic ion (Fe2+, Ni2+, Co2+) additional intervalence charge transfer transitions are observed. CoFe2O4 is the only spinel ferrite with a major contribution of crystal field transitions to the magneto-optical spectrum. The observed presence of only two intense crystal field transitions in specifically CoFe2O4 is explained. The observed relative strengths of these two transitions in CoFe2O4, in which remarkably the upper transition at 1.82 eV is more intense than the lower transition at 0.83 eV is also explained in a crystal field analysis. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 888-893 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a model that describes grain-boundary-limited conduction in polycrystalline semiconductors, for thermally assisted ballistic as well as diffusive transport, both for degenerate and nondegenerate doping. In addition to bulk parameters (the carrier effective mass and mean free path) the model contains grain boundary parameters (barrier height and width) and a coefficient of current nonuniformity. Temperature-dependent conductivity and Hall measurements on polycrystalline SnO2 thin films with different Sb concentrations are consistently interpreted. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 22 (1980), S. 257-271 
    ISSN: 1432-0630
    Keywords: 07.58 ; 76.60 ; 87.60G
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A general formalism is presented for the analysis of NMR spin imaging spectra obtained with magnetic field modulation during the free induction decay. We show that weighted integrals of the spin density distribution are measured by this technique and deduce a prescription for reconstructing this distribution from the recorded free induction decay signal. The formalism is applied to two-dimensional imaging with one static and one modulated gradient field. For square-wave and cosine-wave modulation the transformations needed to calculate the image from the spectrum are given explicitly, and their effect is illustrated with computer-simulated pictures. We show how resolution and maximum allowable object size depend on the experimental parameters and argue that even two-dimensional imaging of a 32 cm×32 cm specimen with a resolution of 1 cm in each direction will be difficult to attain in practice, mainly because of the required strength of the modulated magnetic field.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    International Journal of Quantum Chemistry 29 (1986), S. 1059-1066 
    ISSN: 0020-7608
    Keywords: Computational Chemistry and Molecular Modeling ; Atomic, Molecular and Optical Physics
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Results are presented of a Hartree-Fock cluster study of interstitial Ti, V, Cr, and Mn impurities in silicon. A Si10 cluster models the nearest Si atoms around a tetrahedral interstitial site in crystalline Si. The dangling bonds of the Si atoms are saturated by hydrogens. The effect of the Si core electrons is represented by an effective potential. Characteristic for the electronic structure of the low-lying states of the neutral, singly positive, and doubly positive ions in silicon is the presence of fairly delocalized but still predominantly transition-metal (3d)-like orbitals of t2 and e symmetry. For all ions the energy of the weighted average of the terms belonging to a configuration is lowest for the configuration with maximum occupation of the t2 orbitals. Ground states with maximum spin multiplicity are found for all ions, except Ti0.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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