ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
New results on bulk growth of 6H-SiC crystals along the [01-15] direction are presented.The aim of our work is to improve the quality of the crystal grown by classical PVT method byemploying alternative growth directions, other than conventional [0001]. Using a specially designedgraphite crucible, crystals with an expansion angle of 30 degrees and diameters up to 40 mm havebeen grown. No polycrystalline rim develops at the contact with the graphite wall. Concerningspecific defect content in the [01-15]-oriented crystals, they appear completely free of micropipesand screw or threading edge ([0001]-oriented) dislocations. The [01-15] crystal relaxes adopting anetwork of in-plane (0001) dislocations. They are not uniformly distributed reaching the maximumdensity of about 106 cm-2
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.17.pdf
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