ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We present comprehensive cathodoluminescence measurements from thin amorphous a-SiC films doped with rare earths. The a-SiC films were prepared by rf magnetron sputtering using ahigh purity SiC wafer in high purity argon atmosphere (5N, pressure approx. 0.2 mbar). The rareearth doping (Tb, Dy and Eu concentrations were below 2%) was performed by placing respectiverare earth metal pieces of appropriate size onto the Silicon Carbide wafer. The rare earth ionemissions cover the colors green (Tb), yellow (Dy) and red (Eu). The optical and related structuralproperties of the films are correlated by means of high resolution transmission electron microscopyin combination with cathodoluminescence measurements in a scanning electron microscope. Inaddition, the corresponding compositions are determined by energy-dispersive x-ray analysis. Thecathodoluminescence spectra of the rare earth 3+ ions are recorded in the visible at 20°C in the asgrowncondition and after annealing treatments in the temperature range from 300°C to 1050°C bysteps of 150°C. The anneal-related changes in the cathodoluminescence emission spectra and in themicrostructure of the films are addressed. The SiC films show amorphous structure almostindependent of the annealing treatment. Optimal annealing temperature for emissions of Tb3+ dopeda-SiC were derived to be 600°C whereas Dy3+ and Eu3+ emissions increase at least up to 1050°C
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.663.pdf
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