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  • 1
    Electronic Resource
    Electronic Resource
    Cross relaxation and upconversion coefficients of the mid-infrared transitions of Pr3+:LaCl3 (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2759-2765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short pulse laser-induced fluorescence experiments on the lowest-energy electronic states (υ〈10−4 cm−1) of trivalent praseodymium ions are reported. Crystals of lanthanum trichloride with a range of Pr3+ concentrations were examined. We compute cross relaxation and upconversion coefficients for the metastable energy levels using a standard rate equation analysis. The limitations of the rate equation approach are examined with a focus on the underlying dynamics of this rare-earth system. The implications of these results for laser emission in the 1.3–7.2 μm spectral range are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366107
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  • 2
    Electronic Resource
    Electronic Resource
    GaAs/AlGaAs multiquantum well resonant photorefractive devices fabricated using epitaxial lift-off (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2244-2246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter deals with resonant photorefractive devices fabricated from multiquantum wells of GaAs/Al0.3Ga0.7As and operated in a quantum-confined Stark effect geometry. Details of the processing are presented. Epitaxial lift-off was used to remove the active device from the substrate. Low-temperature Al0.3Ga.07As was used as an insulator to form metal-insulator-semiconductor structures on both sides of the multiquantum wells. Proton implant damage was used to improve the fringe visibility. Photorefractive wave mixing with a diffraction efficiency of ∼0.03% was demonstrated. The incorporation of a nitride layer between the top electrode and the low-temperature AlGaAs increased the efficiency to 0.5%. The improvement is attributed to a reduction in the conduction of carriers across the low-temperature layer into the electrode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111658
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  • 3
    Electronic Resource
    Electronic Resource
    Intrinsic multiple quantum well spatial light modulators (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1044-1046 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large improvements are reported in the sensitivity of optically addressed multiple quantum well spatial light modulators. In prior work with these materials the quantum well region has been made semi-insulating. It is shown that this is unnecessary and in fact detrimental to performance. By placing layers containing high trap concentrations at the ends of the structure and leaving the active quantum well layers intrinsic the speed of the device at a given illumination is improved by more than four times, diffraction efficiency is enhanced and spatial resolution is almost the same. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113568
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  • 4
    Electronic Resource
    Electronic Resource
    High-resolution spatial light modulators using GaAs/AlGaAs multiple quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 956-958 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report improved performance in semi-insulating GaAs/AlGaAs quantum well based spatial light modulators grown by molecular beam epitaxy. The optically addressed modulator reported here are of a new design and have significantly higher spatial resolution than previously reported devices. Strong diffraction efficiencies are described for spatial periods as fine as 2.6 μm at framing rate as high as 600 kHz. Two modulators are characterized, one with x=0.1 and the other with x=0.3 for the AlxGa1−xAs quantum barriers of the superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112160
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    Paper (German National Licenses)
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