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  • 1
    Electronic Resource
    Electronic Resource
    GaAs/AlGaAs multiquantum well resonant photorefractive devices fabricated using epitaxial lift-off (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2244-2246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter deals with resonant photorefractive devices fabricated from multiquantum wells of GaAs/Al0.3Ga0.7As and operated in a quantum-confined Stark effect geometry. Details of the processing are presented. Epitaxial lift-off was used to remove the active device from the substrate. Low-temperature Al0.3Ga.07As was used as an insulator to form metal-insulator-semiconductor structures on both sides of the multiquantum wells. Proton implant damage was used to improve the fringe visibility. Photorefractive wave mixing with a diffraction efficiency of ∼0.03% was demonstrated. The incorporation of a nitride layer between the top electrode and the low-temperature AlGaAs increased the efficiency to 0.5%. The improvement is attributed to a reduction in the conduction of carriers across the low-temperature layer into the electrode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111658
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  • 2
    Electronic Resource
    Electronic Resource
    Intrinsic multiple quantum well spatial light modulators (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1044-1046 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large improvements are reported in the sensitivity of optically addressed multiple quantum well spatial light modulators. In prior work with these materials the quantum well region has been made semi-insulating. It is shown that this is unnecessary and in fact detrimental to performance. By placing layers containing high trap concentrations at the ends of the structure and leaving the active quantum well layers intrinsic the speed of the device at a given illumination is improved by more than four times, diffraction efficiency is enhanced and spatial resolution is almost the same. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113568
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  • 3
    Electronic Resource
    Electronic Resource
    Excited state spectroscopy of excitons in single quantum dots (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2391-2393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the results of a photoluminescence study of quantum dots which are formed by interface fluctuations in narrow GaAs/AlAs single quantum wells. The photoluminescence measurements were made with lateral spatial resolution ranging from the macroscopic down to the optical near-field regime. For spatial resolution below a few square microns the photoluminescence from individual quantum dots is resolved. Photoluminescence excitation spectroscopy is used to study the excited state spectrum of an exciton bound in a single quantum dot. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114557
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  • 4
    Electronic Resource
    Electronic Resource
    High-resolution spatial light modulators using GaAs/AlGaAs multiple quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 956-958 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report improved performance in semi-insulating GaAs/AlGaAs quantum well based spatial light modulators grown by molecular beam epitaxy. The optically addressed modulator reported here are of a new design and have significantly higher spatial resolution than previously reported devices. Strong diffraction efficiencies are described for spatial periods as fine as 2.6 μm at framing rate as high as 600 kHz. Two modulators are characterized, one with x=0.1 and the other with x=0.3 for the AlxGa1−xAs quantum barriers of the superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112160
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  • 5
    Electronic Resource
    Electronic Resource
    In situ determination of flux nonuniformities during molecular beam epitaxial growth (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1317-1319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed an amplitude modulation superimposed on growth induced reflection high energy electron diffraction (RHEED) oscillations in molecular beam epitaxial growth of GaAs, AlSb, and GaSb. An analysis of spatially resolved luminescence measurements from a single GaAs/Al0.3Ga0.7As quantum well and RHEED oscillation data verifies an earlier suggestion of Van Hove and co-workers that this modulation is related to nonuniform group III fluxes at the substrate. This phenomenon is very useful because it allows a quantitative in situ determination of group III flux nonuniformity. Furthermore, this study indicates that theories relating the decay of the RHEED oscillations to growth induced roughening of the surface should account for modifications that arise in the apparent decay rate because of flux nonuniformities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105486
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  • 6
    Electronic Resource
    Electronic Resource
    Interfaces in GaAs/AlAs quantum well structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2710-2712 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the bottom interface (GaAs on AlAs) in GaAs/AlAs single quantum wells using reflection high-energy electron diffraction, luminescence, and luminescence excitation spectroscopy. The results indicate that it is possible to grow GaAs/AlAs quantum wells with two truly smooth interfaces using molecular beam epitaxy with growth interrupts. A set of samples in which the growth interrupt time on the bottom interface was changed illustrates in a systematic way the qualitative behavior possible in luminescence spectra. In particular, the energy splitting between the exciton peaks is observed to vary in the rough regime and in the truly smooth regime, although in a different way.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103807
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    Paper (German National Licenses)
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