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  • 1
    Electronic Resource
    Electronic Resource
    High-level expression in Escherichia coli and rapid purification of enzymatically active honey bee venom phospholipase A"2
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Lipids and Lipid Metabolism 1165 (1992), S. 201-210 
    Details
    ISSN: 0005-2760
    Keywords: Antigen/allergen ; Kallikrein ; Phospholipase A"2 ; Prokaryotic expression ; Refolding ; Synthetic gene
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0005-2760(92)90188-2
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  • 2
    Electronic Resource
    Electronic Resource
    Inverse parabolic quantum well and its quantum-confined Stark effect (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6247-6250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An inverse parabolic quantum well was successfully grown by molecular-beam epitaxy using a digital compositional grading superlattice composed of Al0.36Ga0.64As/GaAs. The photoluminescence and photocurrent measurements for this structure gave a good agreement between experimental and theoretical results. Large Stark shift and amplitude reduction of 1e-1hh exciton resonance under applied electric field were found in the photoluminescence spectra, which are substantially larger than the conventional square quantum well. These properties benefited from the concept of local-to-global state transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355167
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  • 3
    Electronic Resource
    Electronic Resource
    Strain-induced effects in (111)-oriented InAsP/InP, InGaAs/InP, and InGaAs/InAlAs quantum wells on InP substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5747-5750 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain-induced effects in quantum wells of InAsxP1−x/InP, InxGa1−xAs/InP, and InxGa1−xAs/ In0.52Al0.48As on (111) InP substrates are investigated. The strain induces a large piezoelectric field in these structures, and causes a large change in their energy band edges. Consequently the band structure of the quantum wells is dramatically modified, and the dependence of interband transition energies on alloy composition is different from that of quantum wells on (100) substrates. Moreover, a larger critical layer thickness is found for the quantum wells studied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359219
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  • 4
    Electronic Resource
    Electronic Resource
    Self-consistent analysis of electric field-dependent intersubband transitions for a thin layer inserted quantum well (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4484-4488 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A self-consistent theoretical analysis, using both the Schrödinger and Poisson equations, is made to calculate the electric field-dependent intersubband electron transition for a thin layer inserted in a quantum well. In a 100-A(ring)-wide square quantum well a layer is embedded giving a deeper wall (or a barrier). This layer is carefully adjusted in its position and composition to optimize the dependence of intersubband transition on the external electric field. The analysis shows that the structure with a narrow well thickness between 30 and 45 A(ring), located at the side of the wide well, has optimal properties in terms of large near-linear Stark shifts associated with high oscillator strengths and a wide range of voltage tunability in the transition wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352788
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  • 5
    Electronic Resource
    Electronic Resource
    Mediation of strain from In0.36Ga0.64As layers through GaAs barriers in multiple quantum well structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3242-3244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain mediation in multiple quantum well structures consisting of In0.36Ga0.64As layers separated by GaAs barriers has been investigated by photoluminescence. Strain in layers grown by molecular beam epitaxy was evaluated by comparing the photoluminescence-peak energies with calculated recombination energies in strained quantum wells using the effective-mass Schrödinger equation. In structures consisting of two 40 A(ring) thick In0.36Ga0.64As layers separated by a GaAs barrier, onset of relaxation is not observed until the barrier thickness is reduced below 100 A(ring). The corresponding value is 180 A(ring) in a structure with two 50 A(ring) thick In0.36Ga0.64As layers. Results also show that strain mediation increases with the number of strained In0.36Ga0.64As layers. In multiple quantum well structures with four 50 A(ring) thick In0.36Ga0.64As layers, the barrier thickness required to stop strain mediation increases to 225 A(ring). In similar structures with eight and twenty 50 A(ring) thick In0.36Ga0.64As layers this value is 275 A(ring). © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112425
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  • 6
    Electronic Resource
    Electronic Resource
    Growth of analog AlxGa1−xAs/GaAs parabolic quantum wells by molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 61-62 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Parabolic AlxGa1−xAs/GaAs quantum wells have been grown by molecular beam epitaxy with linear ramping of the Al effusion cell temperature, where the ramping rate was carefully analyzed to avoid a flux lag. The calculated potential profile from the temperature variation was very close to the parabolic one. Low-temperature photoluminescence showed clear interband transitions up to the n=3 sublevels. The equal energy spacing between adjacent transitions involving heavy-hole states confirmed the parabolic shape of the quantum well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108819
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  • 7
    Electronic Resource
    Electronic Resource
    Inclined circular flat punch on a transversely isotropic piezoelectric half-space (1999)
    Springer
    Archive of applied mechanics 69 (1999), S. 455-464 
    Details
    ISSN: 1432-0681
    Keywords: Key words piezoelectric medium ; potential theory ; circular punch ; half-space ; complete solution
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Summary Utilizing the general solution of transversely isotropic piezoelectricity, the paper analyzes the problem of an inclined rigid circular flat punch indenting a transversely isotropic piezoelectric half-space. The potential theory method is employed and generalized to take into account the effect of the electric field in piezoelectric materials. Assuming that the punch is maintained at a constant electric potential, exact expressions for the elastoelectric field are derived in terms of elementary functions. It is noted that the solution corresponding to a flat circular punch centrally loaded by a concentrated force can be obtained as a special case.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004190050234
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