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  • 1
    Electronic Resource
    Electronic Resource
    Correlation between the cohesive energy and the onset of radiation-enhanced diffusion in ion mixing (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2615-2617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A correlation between the cohesive energy of elemental solids and the characteristic temperature Tc for the onset of radiation-enhanced diffusion during ion mixing is established. This correlation enables one to predict the onset of radiation-enhanced diffusion for systems which have not yet been investigated. A theoretical argument based on the current models of cascade mixing and radiation-enhanced diffusion is provided as a basis for understanding this observation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337131
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  • 2
    Electronic Resource
    Electronic Resource
    Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 949-951 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using room-temperature surface photovoltage spectroscopy (SPS), we have characterized a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structure. Signals have been observed from every region of the sample. From a line shape fit to the normalized first derivative of the surface photovoltage signal with respect to photon energy, the two-dimensional electron gas density (Ns) was obtained and found to be in good agreement with Hall measurement. The Al composition and the properties of the GaAs/GaAlAs superlattice buffer layer also were obtained from the SPS spectrum. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392974
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of diamond facet on the electrical properties of Pt/BF+2 ion implanted polycrystalline diamond contacts (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3344-3346 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very good quality of polycrystalline diamond films with different major facets were grown on the Si(100) substrates at different position of the plasma ball in a microwave plasma enhanced chemical vapor deposition chamber. Pt/BF+2 ion implanted polycrystalline diamond contacts were fabricated to examine the effect of diamond facets on their electrical properties. The Pt/diamond contact exhibited Schottky characteristics for the diamond film with major facet (100). In contrast, the Pt/diamond contact exhibited ohmic behavior for the diamond film with major facet (111). The I-V characteristics of the Pt/BF+2 ion implanted polycrystalline diamond contacts were not reliable if the diamond facet factor was not considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110165
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial growth of aluminum nitride on Si(111) by reactive sputtering (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2097-2099 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied growth of aluminum nitride (AlN) on Si(111) by ultra-high vacuum (UHV) reactive dc-magnetron sputtering under a mixture of Ar and N2 gases. As-grown films have been examined by x-ray diffraction, Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). Results of x-ray diffraction show texturing with AlN [0001]//Si[111]. Complementary TEM examinations observe epitaxy of AlN on Si(111), with AlN[112¯0]//Si[22¯0]. The AlN/Si interface is sharp and flat. The lowest substrate temperature required to achieve epitaxy Tepi has been determined to be ∼600 °C. A dislocation density in AlN film grown at 700 °C has been estimated to be ∼3×1011/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106092
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  • 5
    Electronic Resource
    Electronic Resource
    Transition from lateral to transverse phase separation during film co-deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2535-2537 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report observations of two distinct types of phase-separated microstructures in co-deposited Al-Ge films. In the initial stages of growth, lateral phase separation is observed, with a temperature dependence consistent with surface diffusion. As the film grows thicker, the Ge-rich phase becomes increasingly buried, and a transverse phase-separated microstructure results, consisting of an Al-rich layer covering a Ge-rich layer. This observation is explained in terms of the competition between surface and interfacial free energies. We discuss the kinetic aspects of the phase separation process, and the resulting behavior in the thick-film limit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105944
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  • 6
    Electronic Resource
    Electronic Resource
    Cohesive energy effects on anisotropic transport in ion mixing
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 59-60 (1991), S. 504-508 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(91)95268-I
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  • 7
    Electronic Resource
    Electronic Resource
    An imaging-plate detector for small-angle neutron scattering (2000)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 33 (2000), S. 1253-1261 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Small-angle neutron scattering (SANS) measurements have been performed on long-flight-path pinhole-collimation SANS instruments using, as a two-dimensional position-sensitive detector, both a neutron imaging plate, incorporating gadolinium, and a two-step transfer method, with dysprosium foil as the image transfer medium. The measurements are compared with corresponding data taken using conventional position-sensitive gas proportional counters on the SANS instruments in order to assess the viability of the imaging techniques. The imaging plates have pixel sizes of about two orders of magnitude smaller than those of the gas proportional counter. The reduced pixel size provides definite advantages over the gas counter in certain specific situations, namely when limited space necessitates a short sample-to-detector distance, when only small samples (comparable in size to the detector pixels) are available, or when used in conjunction with focusing beam optics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889800009067
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  • 8
    Electronic Resource
    Electronic Resource
    Central nervous system infection due toClostridium septicum: A case report and review of the literature (1997)
    Springer
    Infection 25 (1997), S. 171-174 
    Details
    ISSN: 1439-0973
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary A patient with end stage breast cancer was admitted to hospital due to fever, chills, multiply eroded discharging wounds, and sudden onset of left hemiparesis.Clostridium septicum bacteremia and brain abscess were diagnosed. The patient was treated successfully with intravenous penicillin and clindamycin and stereotactic aspiration of the abscess. Eleven cases ofC. septicum central nervous system infection are reviewed. They showed an extremely fulminant course and high fatality. Nevertheless, some relationship seems to exist between outcome and type of brain lesion. Hemolytic-uremic syndrome associated with central nervous system infection is also discussed, because all these cases in the literature were due to this organism. Early diagnosis and aggressive treatment, including surgical drainage and appropriate antibiotics, are the key to improving the prognosis. A long-term prophylactic oral antimicrobial agent is suggested for patients who survive this infection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02113607
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  • 9
    Electronic Resource
    Electronic Resource
    On cooling behavior of a vertical plate in a phase change material/water composite enclosure under pulsating heat load (1999)
    Springer
    Heat and mass transfer 34 (1999), S. 509-515 
    Details
    ISSN: 1432-1181
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper presents a numerical and experimental study concerning cooling characteristics of a pulsating heated vertical plate sandwiched between a substrate of phase change material (PCM) and an enclosure of water, forming a composite vertical rectangular enclosure. The vertical plate is assumed to have a uniform pulsating (on/off) volumetric heat source. The PCM considered in the present study is n-Octadecane. In the finite-difference simulation, the two-dimensional buoyancy-driven fluid flows developed in both the water-filled subenclosure and the molten PCM region of the PCM-filled subenclosure were modeled as laminar Newtonian fluid flow adhering to the Boussinesq approximation. Meanwhile, two-dimensional conduction is accounted for the plate heater as well as the solid PCM zone. Numerical results are presented to unveil the cooling behavior of the pulsating heat-generating plate through the PCM substrate and water-filled enclosure. Results of the parametric simulations reveal that the water layer has the better capability of heat dissipation than the PCM substrate. Heat dissipation from the plate through the PCM substrate is mainly via the latent heat absorption as associated with melting phenomenon. Moreover, numerical results obtained are compared with the corresponding experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002310050289
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  • 10
    Electronic Resource
    Electronic Resource
    Comparative study of hot embossed micro structures fabricated by laboratory and commercial environments (1998)
    Springer
    Microsystem technologies 4 (1998), S. 113-116 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  Hot embossed microstructures fabricated by laboratory and commercial environments have been studied. The laboratory process uses silicon with micropyramid patterns as the mold insert. Fine replication by using Polymethyl Methacrylate (PMMA) has been achieved. The commercial process uses electroplated nickel as the mold insert. Polyvinyl Chloride (PVC), which has a lower glass transition point than PMMA, has been used as the raw material. Fabrication results show that the laboratory process, although taking about 2 hours long per run, can successfully replicate microstructures. The commercial process which takes only 1 minute per run may be fine tuned for good replication. Atomic Force Microscope (AFM) has been used to analyze the fabricated microstructures. It is found that the root mean square (r.m.s.) roughness of PMMA is about 4 nm and that of PVC is about 10–15 nm. Defects including voids and bumps on both PMMA and PVC films have been found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050109
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