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  • 1
    Electronic Resource
    Electronic Resource
    Effect of gravity on the deposition of colloidal particles on a planar surface (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 8605-8612 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A steady state convective-diffusion equation is solved using a collocation method to find the concentration profile and flux of adsorbing particles near a particle adsorbed on the plane surface. At small values of the gravity number, NG=πd4Δρ/6kT, the concentration profile and flux vary slowly near the preadsorbed particle, while they are highly nonuniform at large values of NG. The effect of the position of the system boundary on the collocation calculation is discussed and it is shown how the concept of flux balance may be used to improve the accuracy of the results. Finally, we develop two fitting functions at high and low values of NG, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480201
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  • 2
    Electronic Resource
    Electronic Resource
    Coherent continuous wave operation of 10×10×2 grating-surface-emitting diode laser array in a ring configuration (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7645-7647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Coherent cw operation of a 10×10×2 grating-surface-emitting diode laser array in a ring configuration is demonstrated. At near twice the threshold current, the ring array exhibits a high degree of spatial coherence (an average of 86%) between emitting grating sections and a narrow linewidth of 28 MHz. The far field fringe visibility is 80% and 88% in the lateral and longitudinal directions, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350363
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  • 3
    Electronic Resource
    Electronic Resource
    Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1916-1918 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs diode lasers exhibiting continuous (cw) operation at room temperature have been grown on a Si substrate by organometallic vapor-phase epitaxy, without the use of molecular-beam epitaxy. To improve the quality of the laser structure, a defect-filtering layer was incorporated between this structure and a GaAs buffer layer about 1.5 μm thick grown on the substrate. Of four types of defect-filtering layers investigated, the most effective was one grown with thermal cycling, which made it possible to obtain pulsed threshold current densities as low as 350 A/cm2 for broad-stripe lasers with a cavity length of 500 μm. Ridge-waveguide lasers with this type of defect-filtering layer have exhibited cw threshold currents as low as 25 mA and a differential quantum efficiency of 55%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346583
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  • 4
    Electronic Resource
    Electronic Resource
    Room-temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1165-1166 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gain-guided Ga0.84In0.16As0.14Sb0.86/Al0.75 Ga0.25As0.06Sb0.94 double-heterostructure lasers emitting at ∼2.2 μm have been operated cw at heat sink temperatures up to 30 °C. The maximum output powers obtained at 5 and 20 °C were 10.5 and 4.6 mW/facet, respectively. For pulsed operation of broad-stripe lasers 300 μm wide and 1000 μm long, the threshold current density was as low as 940 A/cm2, the lowest room-temperature value reported for diode lasers emitting beyond 2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105544
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  • 5
    Electronic Resource
    Electronic Resource
    AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2208-2210 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Separate-confinement heterostructure diode lasers containing a strained Al0.18In0.20Ga0.62 As single quantum well active layer and Al0.25Ga0.75As confining layers have been fabricated from structures grown on GaAs substrates by low-pressure organometallic vapor phase epitaxy. The emission wavelength of these devices is 814 nm. Threshold current density is as low as 103 A cm−2 for cavity length L=1500 μm, and differential quantum efficiency as high as 90% for L=280 μm. The characteristic temperature T0 is 214 K between 10 and 40 °C, and 159 K between 40 and 80 °C. Preliminary tests of cw operation suggest that these lasers are more reliable than AlGaAs/AlGaAs lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104928
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  • 6
    Electronic Resource
    Electronic Resource
    Frequency dependence of the plasma density for helicon plasmas (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 1463-1467 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variations of plasma density are investigated as a function of frequency of rf power in a helicon plasma source. Abrupt, almost step-like changes in the plasma density are observed during the frequency scans under various conditions of the input rf power, the argon gas pressure, and the magnetic field. It is found that the transition frequencies shift to the lower value region as the input rf power and/or the argon gas pressure is increased, and to the higher value region as the magnetic field is increased. The observed density transitions are compared with semianalytical calculations based on the power balance relation and it has been shown that the results are in good agreement. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872325
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  • 7
    Electronic Resource
    Electronic Resource
    First-layer formation in ballistic deposition of spherical particles: Kinetics and structure (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 9296-9303 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a computer simulation and theoretical study of a ballistic deposition process in which spheres are incident on a planar surface. Each incoming sphere follows a path of steepest descent which may involve rolling over the surface of preadsorbed spheres. All particles reaching a stable, elevated position are removed. The frequency of the various rolling mechanisms are evaluated as a function of coverage. The addition mechanism generates clusters of connected spheres by accretion and coalescence. We evaluate the dependence of the cluster size distribution and coalescence probability on coverage. Various peaks in the radial distribution function of the deposited layer provide a signature for the deposition mechanism. The asymptotic approach to saturation is shown to be of the form θ∞−θ(t) ∝exp[−(4/π)Smt]/t2, where Sm=(square root of)3/2 is the smallest possible target area. The expression is shown to be consistent with the simulation results. Interpolants, which accurately describe the time-dependent coverage over the entire coverage range, are developed based on the exact expressions for the asymptotic and low coverage kinetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465545
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  • 8
    Electronic Resource
    Electronic Resource
    Mixed convection flow in a curved annulus: Effect of radius ratio (1993)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 5 (1993), S. 1843-1845 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fully developed mixed convection flow in a loosely curved annulus is examined. Analytic solutions in power series form, where the radius ratio is properly taken into account, are derived. It is found that the power series solution is in good agreement with the numerical solution. It is also illustrated that the dimensionless numbers based on hydraulic radius are adequate to characterize the inclination of the secondary flow cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.858806
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  • 9
    Electronic Resource
    Electronic Resource
    InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 321-323 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Graded-index separate-confinement heterostructure InGaAs/AlGaAs single quantum well diode lasers emitting at 1.02 μm have been fabricated from structures grown by organometallic vapor phase epitaxy. Under pulsed operation, threshold current densities as low as 65 A/cm2, the lowest reported for InGaAs/AsGaAs lasers, have been obtained for a cavity length L of 1500 μm. Differential quantum efficiencies as high as 90% have been obtained for L=300 μm. Output powers as high as 1.6 W per facet and power conversion efficiencies as high as 47% have been obtained for continuous operation of uncoated lasers with L=1000 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103678
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  • 10
    Electronic Resource
    Electronic Resource
    Measurement of the two-photon absorption coefficient in a GaAs/AlGaAs quantum well laser (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 212-214 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two-photon absorption (TPA) coefficient has been measured for a single-mode GaAs/AlGaAs quantum well laser at 0.86 μm, near the lasing wavelength of 0.83 μm. Picosecond laser pulses were employed to resolve the ultrafast TPA from long-lived carrier-dependent effects. The TPA coefficient was found to be 31±6 cm GW−1, which corresponds to a value of (5.7±1.2)×10−11 esu for the imaginary part of the third-order nonlinear susceptibility. At wavelengths near the quantum well exciton, no strong resonance enhancement of the two-photon transition was observed, and the coefficient appears to be characteristic of the AlGaAs cladding layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103741
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