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  • 1
    Electronic Resource
    Electronic Resource
    Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2099-2101 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInP material has been used as a high-gap semiconductor on InP to fabricate Schottky diodes. The experimental results show that the devices exhibit good electrical properties when the ternary strained layer is below the critical thickness. The best device is obtained with a gallium composition of 100% and a GaP thickness of 11 A(ring), and exhibits a barrier height of 0.8 eV, an ideality factor of 1.1, and a reverse current of 0.1 nA at −1 V. A high electron mobility transistor has been fabricated on an InP substrate by molecular beam epitaxy using a high-gap GaInP material, and a transconductance of 300 mS/mm has been measured on a device of 1.3 μm gate length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102075
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  • 2
    Electronic Resource
    Electronic Resource
    Growth of matched metallic ErP0.6As0.4 layers on GaAs in a molecular beam epitaxy system (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2298-2300 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metallic layers of ErP0.6As0.4 have been grown by molecular beam epitaxy on GaAs at 500 °C. The growth has been achieved by adjusting the PH3 and AsH3 flows to obtain a good lattice match to the substrate, the erbium flux remaining below the flux of the V elements. The 10–100 nm thick epitaxial layers reproducibly showed lattice mismatch below 5×10−4 and unlike the ErAs layers, they do not degrade in the atmosphere. Due to its low resistivity (ρ=80 μΩ cm), this compound is an ideal candidate for the realization of epitaxial III-V semiconductor/metal/III-V semiconductor heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102043
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  • 3
    Electronic Resource
    Electronic Resource
    Schottky diode and field-effect transistor on InP (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1238-1240 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky diode has been realized on InP by a special dry surface treatment. The diode reaches a breakdown voltage of 60 V and the reverse current remains at 0.6 μA under 30 V reverse voltage. The best device shows a reverse current of 0.2 nA at 1 V voltage with an ideality factor of 1.54. The Schottky has been used as a gate in the fabrication of field-effect transistors (FETs) on InP by ion implantation and chemical beam epitaxy. The ion-implanted FET with a channel concentration of 2×1017 cm−3 shows a transconductance of 107 mS/mm at room temperature for a 3 μm gate length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100727
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  • 4
    Electronic Resource
    Electronic Resource
    Schottky and field-effect transistor fabrication on InP and GaInAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 540-542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky contacts with barrier heights of 0.76 eV on n-type InP and 0.65 eV on n-type GaInAs are realized by a new surface treatment. These contacts are used as a gate for the fabrication of field-effect transistors (FET) on these materials. Extrinsic transconductances of 100 and 7.5 mS/mm are measured on GaInAs and InP FET's, respectively. These values are obtained without optimization of the ohmic contacts of the devices and without a gate recess.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99410
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1597-1599 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs epitaxial layers have been doped with beryllium with concentrations ranging from 1016 to 5×1019 cm−3 as measured by secondary ion mass spectroscopy (SIMS). From electrical measurements we have observed that p-type layers presented a high degree of compensation, and for a doping level below 5×10−7 cm−3, they are often found to be n type. SIMS analysis shows that oxygen is responsible for such behavior. Beryllium doping leads to incorporation of a large amount of oxygen in the epitaxial layers. Investigations on the origin of oxygen incorporation show that it is extremely sensitive to the residual vacuum during the growth and can be reduced by decreasing arsenic pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98566
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  • 6
    Electronic Resource
    Electronic Resource
    Residual defect center in GaInAs/InP films grown by molecular beam epitaxy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1361-1363 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky contact with apparent barrier height of near 0.65 eV has been fabricated and used to perform capacitance-voltage and deep level transient spectroscopy characterizations on n-type molecular beam epitaxy grown GaInAs layers matched to InP substrates. The experimental results show the existence of a residual defect center located at 0.33 eV below the conduction band which is here described for the first time. This defect center is localized close to the surface and the interface of the grown layers. The origin of the center is not clearly understood, but it seems to be a residual defect in which oxygen atom can be involved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98679
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  • 7
    Electronic Resource
    Electronic Resource
    Oxygen complexes in III-V compounds as determined by secondary-ion mass spectrometry under cesium bombardment (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2241-2247 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent studies related to the p-type doping of GaInAs epilayers, grown by molecular-beam epitaxy, mentioned erratic results concerning the electrical activity of beryllium (Be). This work reports on the secondary-ion mass spectrometry analysis of moderately Be-doped (between 5×1017 and 5×1018 cm−3 ) GaInAs/InP layers. Two of them were n type while they should have been p type. The comparison of Be depth profiles, obtained under either oxygen or cesium primary-ion bombardment, and detailed study of the secondary-ion mass spectra reveals that Be+ secondary-ion useful yields are largely enhanced in n-type samples when using cesium primary ions. Such behavior is attributed to the presence of varying oxygen contents in the samples, as confirmed by quantitative analyses. Comparison of Be and O concentrations indicates that the two elements probably form complexes inside the GaInAs matrix, providing a mechanism for the observed Be electrical inactivity. The use of positive secondary-ion yield enhancement under cesium bombardment is generalized to other elements (magnesium) in other semiconductor materials, in particular to the case of Au-Mn/GaAs ohmic contacts. Once again such ions reveal the presence of oxygen. Paradoxically, BeCs+ or MgCs+ molecular ions are not sensitive to the presence of oxygen. It is hypothesized that MCs+ species are more stable than MO+ . Such a differential effect is very helpful in characterizing the presence of oxygen in semiconductor materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344278
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  • 8
    Electronic Resource
    Electronic Resource
    Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1751-1753 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A procedure of InAs/InP quantum dots elaboration emitting at 1.55 μm by gas source molecular beam epitaxy is described. It is based on a modification of the capping layer growth which is deposited in two steps, separated by a growth interruption under phosphorus flux. The main effect of this two step capping layer growth is to reduce the height of the biggest islands and thus to decrease the photoluminescence linewidth of the quantum dots emission line. Transmission electron microscopy and photoluminescence experiments show that quantum dots structure are still present after growth interruption under phosphorus flux and that the photoluminescence linewidth at 1.55 μm is reduced from 120 to 50 meV, thanks to this procedure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356449
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  • 9
    Electronic Resource
    Electronic Resource
    Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 μm (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3591-3593 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results on semi-insulating photorefractive multiple quantum well (MQW) devices operating without trapping layers are reported. The device structure consists of a MQW doped with Fe (1017 cm−3) isolated from the doped contact by intrinsic standoff layers. The photocarriers generated by the pump pulse are trapped in the MQW and screen the applied electric field in the MQW. Output diffraction efficiency of 0.2% is measured in a nondegenerate four-wave-mixing configuration and the rise time of the diffraction signal reaches 200 ns. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119242
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  • 10
    Electronic Resource
    Electronic Resource
    Photorefractive p-i-n diode quantum well operating at 1.55 μm (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3576-3578 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the performance of a semiconductor photorefractive p-i-n diode operating at 1.55 μm in the longitudinal quantum-confined Stark geometry. The device structure consists of a semi-insulating InP–GaInAs(P) multiple quantum well, sandwiched between two trapping regions, and embedded in a p-n junction. In this structure, the measured output diffraction efficiency reaches 0.6%. This value is close to the output diffraction efficiency value estimated from electroabsorption measurements. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116642
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