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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of microblasted and reactive ion etched surfaces on the commercially pure metals niobium, tantalum and titanium (1997)
    Springer
    Journal of materials science 8 (1997), S. 781-784 
    Details
    ISSN: 1573-4838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Technology
    Notes: Abstract In surface-roughened metallic implant materials, the topography, chemistry and energy of the surfaces play an important role for the cell and tissue attachment. The highly reactive commercially pure metals niobium, tantalum and titanium were analysed after microblasting (with Al2O3 powder and consecutive shot-peening with ZrSiO2), and after additional reactive ion etching (RIE, with CF4). Scanning electron microscopy in combination with energy-dispersive X-ray analysis and surface roughness measurements showed, for all microblasted surfaces, a heterogeneous roughening (Ra about 0.7 μm), and a contamination with blasting particles. RIE resulted in a further roughening (Ra about 1.1 μm), and a total cleaning from contaminations, except for traces of aluminium. Determination of surface energy by dynamic contact angle measurements showed an increase in surface energy after microblasting, which further increased after RIE, most pronounced for commercially pure niobium. In conjunction with superior electrochemical properties, this makes niobium and tantalum promising candidates for implant purposes, at least equal to the generally used titanium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018568830442
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  • 2
    Electronic Resource
    Electronic Resource
    Depth profiling by ARXPS in surface analysis (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 473-477 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract A method of nondestructive depth profiling in near surface regions of solids is described. Models have been discussed from which algorithms for evaluation of measured data are obtained. The algorithms, based on standard profiles with free parameters, have been adjusted to the data resulting from angle resolved XPS (ARXPS) by means of least squares fits. Depth profile analyses and segregation studies were performed on Pt–Ni and Fe–S specimens.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s0021653530473
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Experimental influences on the results of concentration depth profiling by ARXPS (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 490-498 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Angular resolved XPS (ARXPS) makes it possible to determine film thicknesses, attenuation lengths of photoelectrons and depth profiles of compositions. The usual algorithms for evaluating thin film results (rectangular depth profile of composition) do not account for influences of count-rate statistics, finite solid angle of electron acceptance, elastic scattering of electrons and surface roughness on the results. Computer simulations of ARXPS performed on specimens with rectangular depth profiles provide a better understanding of deviations from expected depth responses of composition due to these influences. The dominant influence of surface roughness on the results is demonstrated by a comparison of ARXPS performed on SiO2-films on monocrystalline and on polycrystalline Si-wafers.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740210629
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  • 4
    Electronic Resource
    Electronic Resource
    Quantitative XPS analysis considering elastic scatteringPaper presented at the Third International Conference on Quantitative Surface Analysis held at the National Physical Laboratory, Teddington, UK, 22-24 November 1983. (1984)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 6 (1984), S. 140-143 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Up to now the equations for both quantitative XPS analysis and those for the determination of reduced thicknesses of thin overlayers have been derived according to the assumption of a well-defined photoelectron escape length. Escape length distributions are caused by a variety of influences. The consequences of this are demonstrated by the example of thin overlayers. Additionally, an approximation is developed which accounts for elastic electron scattering. The ratio Λ/λel of mean free path is the characteristic quantity of this approximation, which is quantified by comparison of Monte Carlo calculations and thin film experiments. This approximation allows us to conclude that elastic electron scattering does not influence quantitative XPS analysis, so long as it is performed without any kind of references.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740060307
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  • 5
    Electronic Resource
    Electronic Resource
    Quantitative analysis by XPS using the multiline approach (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 724-730 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: An efficient method for quantitative XPS analysis is the so-called multiline approach. This method does not require standards, it takes into account the instrumental and matrix effects and it derives quantitative information from statistical analysis of all photoelectron intensities visible in the spectra. One can expect the reliability of this approach to be better than the reliability of methods involving uncorrected relative sensitivity factors. This paper summarizes recent improvements in the multiline approach. In particular, a new expression for the universal energy dependence of the inelastic mean free path is currently used. Furthermore, the statistical analysis has been modified in order to account properly for the error in the countrates. Finally, a database with physical constants has been added (photoionization cross-sections, asymmetry parameters, binding energies, etc.) to avoid errors of polynomial approximations. The modified algorithm of the multiline approach was applied to photoelectron intensities measured for AuCu alloys in four laboratories. Surfaces of these alloys were sputtered with 2 keV Ar+ ions, because at this energy the selective sputtering effects are expected to be negliible. Very consistent results were obtained. The average deviation from the bulk surface composition was found to be equal to ±3.2 at.%. Extensive software implementing the described version of the multiline approach is presently being developed.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740211008
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  • 6
    Electronic Resource
    Electronic Resource
    Computer-aided resolution enhancement for XPS imaging of an uncharged single chemical species (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 18 (1992), S. 781-783 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Imaging XPS can be performed by an application of the double focusing properties of the hemispherical electron energy analyser. The x-ray photoelectron spectra originating from an area of the specimen are depicted on a multichannel plate electron detector. An increasing size of this specimen area helps to reduce the total time for the generation of an XPS image. But, together with a reduction of the time of measurement, a loss of lateral resolution has to be expected. The present paper deals with the concept of computer-aided compensation for the loss of resolution due to an increase of the observed specimen area. The principle of this concept is based on a deconvolution of the measured x-ray photoelectron spectra.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740181108
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  • 7
    Electronic Resource
    Electronic Resource
    Description of the influence of elastic scattering of electrons in the specimen and in an adventitious hydrocarbon overlayer on photoelectron signals by effective values of the inelastic mean free path and the asymmetry parameter (1993)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 20 (1993), S. 569-572 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The influence of elastic scattering of photoelectrons in the substrate and in an adventitious hydrocarbon overlayer on the effective inelastic mean free path and the effective asymmetry parameter has been investigated by Monte Carlo calculation. The results are representative of 27 chemical elements, asymmetry parameters 0.6 ≤ β ≤ 2.0, kinetic electron energies 300 ≤ Ekin ≤ 1500 eV and overlayer thicknesses 0 ≤ t ≤ 26.6 Å. For an application in quantitative surface analysis by XPS we propose the use of the effective inelastic mean free path (0.951 IMFP, tabulated values) and the effective asymmetry parameter βeff. The calculation of βeff is performed by tabulated values of β, inelastic mean free paths and measured reduced thicknesses of the hydrocarbon layer.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740200705
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  • 8
    Electronic Resource
    Electronic Resource
    An Electron Spectroscopic Investigation of Attenuation Lengths of Electrons in SiO2 in the Energy Range 450 eV ≤ Ekin ≤ 3100 eV (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 18 (1992), S. 821-823 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: An experimental determination of the attenuation lengths of electrons in SiO2 by means of XPS and x-ray-excited Auger electron spectra gave a remarkable agreement with recently published inelastic mean free path data.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740181207
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    XPS investigations of Cu(II) ion-selective electrodes (1980)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 2 (1980), S. 197-198 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The results of XPS investigations on Cu(II) ion-selective electrodes are compared to redox sensitivity. A good correlation between surface composition and electrode function was obtained.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740020509
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Imaging XPS - A new technique, I - principles (1983)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 5 (1983), S. 13-19 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: XPS imaging promises to be a powerful analytic tool because it enables specific information on both elements and bonding to be recorded on a two-dimensional distribution map. As far as the authors are aware, the only scanning XPS method to date which has been found to be practical is essentially a scanned-particle-beam method, like scanning AES, and it is only applicable to thin film specimens. This paper provides the basic ideas of a new imaging XPS technique based on a quite different concept. It will be applicable to any kind of specimen that can be analysed in a conventional XPS system. It makes use of the dispersion properties of a spherical condenser-type spectrometer and applies a two-dimensional electron detection device for decoding the energy and emission position of an analysed photoelectron. Experimental arrangement and theory of operation are presented.
    Additional Material: 11 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740050105
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