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  • 1
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A study is made of the electrical, optical, and structural properties of Si:Er layers produced by sublimation molecular-beam epitaxy. The Er and O contents in the layers, grown at 400–600°C, were as high as 5×1018 and 4×1019 cm−3, respectively. The electron concentration at 300 K was ∼10% of the total erbium concentration and the electron mobility was as high as 550 cm2/(V·s). Intense photoluminescence at 1.537 µm was observed from all the structures up to 100–140 K. The structure of the optically active centers associated with Er depended on the conditions under which the layers were grown.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The preparation of light-emitting rare-earth-doped (Er) silicon structures has been considered. A new technique of erbium doping of silicon layer during its growth by the molecular beam epitaxy method is suggested.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2693-2697 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A facility is described to record the blocking pattern of a single crystal produced by 400 keV protons. By this we aim at a reliable, fast, and careful procedure to align single crystals to the incoming ion beam. The two-dimensional position sensitive detector (2D-PSD) system from Roentdek GmbH Frankfurt/M, Germany, is based on three microchannel plates arranged in a Z stack. The essential shortcoming of this detector is its low sensitivity to high energy (〉200 keV) projectiles. To reproduce the pattern formed by 400 keV protons on the 2D-PSD we had to decrease their energy to a few tens of kiloelectron-volts by a stopping foil of 3.5 μm Mylar®. This foil has the additional advantage of absorbing slow projectiles and sputtered atoms emerging from the target. On their way to the detector, these slow particles, in case they are charged, would be strongly influenced by electric fields and would thus obscure the true pattern. At present, our facility allows us to routinely align crystals for channeling measurements accurately, fast and, for most applications, with an acceptable amount of radiation damage. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1794-1799 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a facility which allows us to measure projectiles scattered at an angle arbitrarily near 180°. The backscattered projectiles are deflected in the horizontal plane out of the incoming beam by a combination of electric and magnetic fields. The charged particles, which are spatially dispersed according to their energy, are detected by a cooled 300 mm2 ion implanted silicon detector. By a judicious choice of the relative strength of both fields we ensure that the essential parts of the spectrum will not be distorted due to an energy dependent percentage of projectiles missing the detector. As the projectiles are also dispersed according to their charge state we are able to distinguish between, e.g., singly and doubly charged He projectiles as they hit the detector at different positions. The detector can be moved in the vertical direction to continuously vary the backscattering angle between 180° and 178.5°. This experimental result shows for the first time the angular range to which the 180° enhancement is confined. Such a device is ideally suited for investigating single crystals by uniaxial channeling blocking. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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